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KSC5502D / KSC5502DT
NPN Triple Diffused Planar Silicon Transistor
•
•
•
•
•
•
4
D-PAK
Features
Equivalent Circuit
High Voltage Power Switch Switching Application
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : D-PAK or TO-220
C
1
4
TO-220
B
E
1
1.Base
2,4.Collector
3.Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSC5502DTM
C5502D
TO-252 3L (DPAK)
Tape and Reel
KSC5502DTTU
C5502D
TO-220 3L
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current (DC)
2
A
4
A
(1)
ICP
Collector Current (Pulse)
IB
Base Current (DC)
1
A
IBP
Base Current (Pulse)(1)
2
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
EAS
Avalanche Energy (TJ = 25°C)
-65 to 150
°C
2.5
mJ
Note:
1. Pulse test: Pulse width = 5 ms, duty cycle ≤ 10%.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
July 2014
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
KSC5502D
(D-PAK)
KSC5502DT
(TO-220)
Unit
87.83
118.16
W
Collector Dissipation (TC = 25°C)
RθJC
Thermal Resistance, Junction to Case
1.42
1.06
°C/W
RθJA
Thermal Resistance, Junction to Ambient
111.0
62.5
°C/W
TL
Maximum Lead Temperature for Soldering Purpose:
1/8 inch from Case for 5 seconds
°C
270
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage IC = 1 mA, IE = 0
1200
1350
V
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 5 mA, IB = 0
600
750
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 500 μA, IC = 0
12.0
13.7
ICES
Collector Cut-off Current
VCES = 1200 V, VBE = 0
ICEO
Collector Cut-off Current
VCE = 600 V, IB = 0
IEBO
Emitter Cut-off Current
VEB = 12 V, IC = 0
VCE = 1 V, IC = 0.2 A
hFE
DC Current Gain
VCE = 1 V, IC = 1 A
VCE = 2.5 V,
IC = 0.5 A
IC = 0.2 A, IB = 0.02 A
VCE(sat)
Collector-Emitter Saturation
Voltage
IC = 0.4 A, IB = 0.08 A
IC = 1 A, IB = 0.2 A
IC = 0.4 A, IB = 0.08 A
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1 A, IB = 0.2 A
V
TC = 25°C
100
TC = 125°C
500
TC = 25°C
100
TC = 125°C
500
TC = 25°C
10
TC = 25°C
15
28
TC = 125°C
8
18
TC = 25°C
4.0
6.4
TC = 125°C
3.0
4.7
TC = 25°C
12
20
TC = 125°C
6
μA
μA
μA
40
30
12
TC = 25°C
0.31
0.80
TC = 125°C
0.54
1.10
TC = 25°C
0.15
0.60
TC = 125°C
0.23
1.00
TC = 25°C
0.40
1.50
TC = 125°C
1.30
3.00
TC = 25°C
0.77
1.00
TC = 125°C
0.60
0.90
TC = 25°C
0.83
1.20
TC = 125°C
0.70
1.00
V
V
Cib
Input Capacitance
VEB = 8 V, IC = 0, f = 1 MHz
385
500
pF
Cob
Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
60
100
pF
Current Gain Bandwidth Product
IC = 0.5 A,VCE = 10 V
11
fT
IF = 0.2 A
VF
Diode Forward Voltage
IF = 0.4 A
IF = 1 A
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
TC = 25°C
0.75
TC = 125°C
0.59
TC = 25°C
0.80
TC = 125°C
0.64
TC = 25°C
0.90
MHz
1.20
1.30
V
1.50
www.fairchildsemi.com
2
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
tfr
Parameter
Diode Froward Recovery
Time (di/dt=10 A/μs)
Conditions
Min
650
IF = 0.4 A
740
IF = 1 A
VCE(DSAT) Dynamic Saturation Voltage
Typ.
IF = 0.2 A
Max.
Unit
ns
785
IC = 0.4 A, IB1 = 80 mA,
VCC = 300 V
at 1 μs
at 3 μs
1.8
IC = 1 A, IB1 = 200 mA,
VCC = 300 V
at 1 μs
18.0
at 3 μs
6.0
TC = 25°C
175
TC = 125°C
185
TC = 25°C
2.1
TC = 125°C
2.6
TC = 25°C
240
TC = 125°C
310
7.2
V
Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)
tON
Turn-On Time
tOFF
Turn-Off Time
tON
Turn-On Time
tOFF
Turn-Off Time
IC = 0.4 A, IB1 = 80 mA,
IB2 = 0.2 A, VCC = 300 V,
RL = 750 Ω
IC = 1 A, IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
RL = 300 Ω
TC = 25°C
3.7
TC = 125°C
4.5
TC = 25°C
1.2
TC = 125°C
1.5
TC = 25°C
90
TC = 125°C
65
350
3.0
450
5.0
ns
μs
ns
μs
Inductive Load Switching (VCC = 15 V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-Over Time
tSTG
IC = 0.4 A, IB1 = 80 mA,
IB2 = 0.2 A, VZ = 300 V,
LC = 200 H
Storage Time
tF
Fall Time
tC
Cross-over Time
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
IC = 0.8 A, IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
LC = 200 H
TC = 25°C
185
TC = 125°C
145
TC = 25°C
3.30
TC = 125°C
3.75
TC = 25°C
90
TC = 125°C
160
TC = 25°C
300
TC = 125°C
570
2.0
200
350
4.50
250
600
μs
ns
ns
μs
ns
ns
www.fairchildsemi.com
3
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Electrical Characteristics
1A
900m A
800m A
700m A
600m A
V C E =1V
100
o
T J =125 C
500m A
2
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
3
400m A
300m A
200m A
I B =100m A
1
o
T J =25 C
10
0
0
1
2
3
4
5
6
1
1m
7
10m
V C E [V ], C O LL E C T O R E M IT T E R V O L T A G E
Figure 1. Static Characteristic
1
Figure 2. DC Current Gain
IC =10I B
I C =5IB
10
VCE(sat)(V), VOLTAGE
10
VCE(sat)(V), VOLTAGE
100m
I C [A ], C O L LE C T O R C U R R E N T )
1
o
T J =125 C
1
o
T J =125 C
o
T J =25 C
o
T J =25 C
0 .1
0 .1
1m
10m
100m
1
1m
10m
I C (A), C O LLEC T O R C U R R E N T
100m
1
I C (A), C O LLE C T O R C U R R E N T
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
2
10
o
T J =25 C
IC =10I B
1.5A
VBE[V], VOLTAGE
VCE[V], VOLTAGE
2.0A
1.0A
1
0.4A
IC =0.2A
0
1m
1
o
T J =25 C
o
T J =125 C
10m
100m
0 .1
1m
1
I B [A ], B A S E C U R R E N T
Figure 5. Typical Collector Saturation Voltage
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
10m
100m
1
I C [A ], C O LL E C T O R C U R R E N T
Figure 6. Base-Emitter Saturation Voltage
www.fairchildsemi.com
4
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics
10
10
VFD[V], VOLTAGE
VBE[V], VOLTAGE
IC = 5 IB
1
o
T J= 2 5 C
o
T J= 1 2 5 C
0 .1
1m
10m
100m
1
o
T J= 2 5 C
o
T J= 1 2 5 C
0 .1
1m
1
10m
I C [A ], C O LL E C T O R C U R R E N T
100m
1
I F D [A ], F O R W A R D C U R R E N T
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Diode Forward Voltage
1000
2000
F=1M H z
C ib
I C =5I B1 =2IB 2
V CC =300V
tON[ns],TIME
CAPACITANCE[pF]
PW =20 μ s
100
C ob
1000
900
800
700
o
600
T J= 1 2 5 C
500
400
300
o
T J= 2 5 C
200
100
10
1
10
0.3
100
0 .5
1
1 .5
2
2 .5
3
I C [A ], C O LL E C T O R C U R R E N T
R E V E R S E V O LT A G E [V ]
Figure 9. Collector Output Capacitance
Figure 10. Resistive Switching Time, ton
5
4 .5
2000
4
I C = 5 I B 1 = 5 I B2
I C = 5 I B 1 = 2 I B2
V c= 3 0 0 V
V CC = 3 0 0 V
3 .5
P W =20μ s
P W =20μ s
tON(ns),TIME
tON(μs),TIME
3
2 .5
2
o
T J =125 C
1000
900
800
700
o
T J =125 C
600
500
400
o
T J =25 C
300
o
T J =25 C
1 .5
200
1
0.3
0 .5
1
1 .5
2
2 .5
100
0.3
3
I C [A ], C O L LE C T O R C U R R E N T
Figure 11. Resistive Switching Time, toff
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
0 .5
1
1 .5
2
2 .5
3
I C [A ], C O LL E C T O R C U R R E N T
Figure 12. Resistive Switching Time, ton
www.fairchildsemi.com
5
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics (Continued)
3
7
6 .5
IC =5I B 1 =2IB 2
IC = 5 IB 1 = 5 IB 2
6
V c= 3 0 0 V
5 .5
V C C =15V
2 .5
V Z=300V
PW =20μ s
L C =200 μ H
5
4
tSTG(μs),TIME
tON(μs),TIME
4 .5
o
T J =125 C
3 .5
o
T J =25 C
2
o
T J =125 C
1 .5
o
T J =25 C
3
2 .5
1
2
0.3
0 .5
1
1 .5
2
2 .5
0.3
3
Figure 13. Resistive Switching Time, toff
1
1 .5
2
2 .5
3
Figure 14. Inductive Switching Time, tSTG
110
600
100
90
I C = 5 I B1 = 2 I B2
550
V CC = 1 5 V
500
IC = 5 IB 1 = 2 IB 2
V Z= 3 0 0 V
450
V CC= 1 5 V
L C= 2 0 0 μ H
400
V Z= 3 0 0 V
L C= 2 0 0 μ H
350
tC[ns],TIME
80
tF(ns),TIME
0 .5
I C [A ], C O LL E C T O R C U R R E N T
I C [A ], C O LL E C T O R C U R R E N T
o
T J =25 C
70
o
T J =125 C
60
300
o
T J =125 C
250
200
o
T J =25 C
150
50
40
0 .5
0.3
1
1 .5
2
2 .5
100
3
0.3
I C [A ], C O LL E C T O R C U R R E N T
Figure 15. Inductive Switching Time, tF
1000
900
800
700
IC = 5 IB 1 = 5 IB 2
V CC= 1 5 V
2
2 .5
3
V CC= 1 5 V
V Z= 3 0 0 V
500
L C= 2 0 0 μ H
1 .5
I C = 5 I B1 = 5 I B2
600
V Z= 3 0 0 V
4
1
Figure 16. Inductive Switching Time, tc
5
4 .5
0 .5
I C [A ], C O LL E C T O R C U R R E N T
L C= 2 0 0 μ H
o
T J =125 C
400
tF[ns],TIME
tSTG[μs],TIME
o
3 .5
o
T J =25 C
3
T J =125 C
300
200
o
T J =25 C
2 .5
100
90
80
70
60
2
0.3
0 .5
1
1 .5
2
2 .5
50
3
0.3
I C [A ], C O LL E C T O R C U R R E N T
Figure 17. Inductive Switching Time, tSTG
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
0 .5
1
1 .5
2
2 .5
3
I C [A ], C O LL E C T O R C U R R E N T
Figure 18. Inductive Switching Time, tF
www.fairchildsemi.com
6
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics (Continued)
2 .0
2000
I C = 5 IB 1 = 5 IB 2
V Z= 3 0 0 V
L C= 2 0 0 μ H
1 .6
L C= 2 0 0 μ H
I C =0.8A
1 .4
600
tSTG, TIME[μs]
tSTG[ns],TIME
V CC= 1 5 V
o
T J =125 C
V Z= 3 0 0 V
1000
900
800
700
IC = 2 IB 2
1 .8
V CC= 1 5 V
500
o
T J =25 C
400
300
o
T J =25 C
o
T J =125 C
1 .2
1 .0
0 .8
200
IC =0.4A
0 .6
0 .4
100
0.3
0 .5
1
1 .5
2
2 .5
4
3
5
6
7
8
9
10
11
12
13
14
h F E , F O R C E D G A IN
I C [A ], C O LL E C T O R C U R R E N T
Figure 19. Inductive Switching Time, tc
Figure 20. Inductive Switching Time, tSTG
200
I C =2IB 2
IC =2I B 2
V C C =15V
V C C =15V
80
V Z=300V
V Z=300V
L C =200 μ H
L C =200 μ H
I C =0.8A
160
tC, TIME[ns]
tF, TIME[ns]
o
T J =25 C
I C =0.8A
o
T J =25 C
o
T J =125 C
60
o
T J =125 C
120
I C =0.4A
I C =0.4A
40
80
4
5
6
7
8
9
10
11
12
13
4
14
5
6
7
Figure 21. Inductive Switching Time, tF
9
10
11
12
13
14
Figure 22. Inductive Switching Time, tc
140
10
o
T C =25 C
5m s
130
120
50 μ s
1m s
DC
110
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
8
h F E , F O R C E D G A IN
h F E , F O R C E D G A IN
1
0 .1
100
90
T O -2 2 0
80
70
D -P A K
60
50
40
30
20
10
0 .0 1
0
10
100
1000
0
V C E [A ], C O LL E C T O R E M IT T E R V O L T A G E
50
75
100
125
150
175
200
o
T C ( C ), C A S E T E M P E R A T U R E
Figure 23. Forward Bias Safe Operating Area
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
25
Figure 24. Power Derating
www.fairchildsemi.com
7
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics (Continued)
10
Normalized Thermal impedance ZoJA
Normalized Thermal impedance ZoJC
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single
0.01
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E-3
1E-4
1E-5
1E-6
1E-6
1
0.5
Single
1E-5
t, R ectangular P ulse D uration
0.1
1
10
100
1000
10
Normalized Thermal impedance ZoJA
Normalized Thermal impedance ZoJC
0.01
Figure 26. ZoJA, Transient Thermal Impedance
(D-PAK)
10
1
0.5
0.2
0.1
0.05
0.02
0.01
Single
0.01
1E-3
1E-5
1E-3
t, R ectangular P ulse D uration
Figure 25. ZoJC, Transient Thermal Impedance
(D-PAK)
0.1
1E-4
1E-4
1E-3
0.01
0.1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E-3
1E-4
Single
1E-5
1E-6
1E-6
1
t, R ectangular P ulse D uration
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t, R ectangular P ulse D uration
Figure 27. ZoJC, Transient Thermal Impedance
(TO-220)
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
1
Figure 28. ZoJA, Transient Thermal Impedance
(TO-220)
www.fairchildsemi.com
8
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Typical Performance Characteristics (Continued)
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Physical Dimensions
Figure 29. TO-252 (D-PAK), MOLDED, 3-LEAD, OPTION AA & AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO252A03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO252A03.pdf.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
9
KSC5502D / KSC5502DT — NPN Triple Diffused Planar Silicon Transistor
Physical Dimensions
Figure 30. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
10
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower¥
AX-CAP®*
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
ESBC¥
F-PFS¥
FRFET®
SM
Global Power Resource
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MicroPak2¥
MillerDrive¥
MotionMax¥
mWSaver®
OptoHiT¥
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
FAST®
FastvCore¥
FETBench¥
FPS¥
®*
®
®
PowerTrench
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
SMART START¥
Solutions for Your Success¥
SPM®
STEALTH¥
SuperFET®
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
®
TinyBoost
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
TriFault Detect¥
TRUECURRENT®*
PSerDes¥
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
❺™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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First Production
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
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