MBRD640CTT4G

MBRD620CT, NRVBD620VCT, SBRV620CT Series Switch-mode Power Rectifiers www.onsemi.com DPAK−3 Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, 20 − 60 VOLTS Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant DPAK CASE 369C 1 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 3 MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B AYWW B 6x0TG A Y WW B6x0T x G = Assembly Location* = Year = Work Week = Device Code = 2, 3, 4, 5, or 6 = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2017 − Rev. 14 1 Publication Order Number: MBRD620CT/D MBRD620CT, NRVBD620VCT, SBRV620CT Series MAXIMUM RATINGS MBRD/NRVBD/SBRV Symbol 620CT 630CT 640CT 650CT 660CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 V Average Rectified Forward Current TC = 130°C (Rated VR) Per Diode Per Device IF(AV) Peak Repetitive Forward Current, TC = 130°C (Rated VR, Square Wave, 20 kHz) Per Diode IFRM Nonrepetitive Peak Surge Current − (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Rating A 3 6 A 6 Operating Junction Temperature (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 6 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Symbol Value Unit 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, TC = 25°C iF = 3 Amps, TC = 125°C iF = 6 Amps, TC = 25°C iF = 6 Amps, TC = 125°C VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) iR 0.7 0.65 0.9 0.85 0.1 15 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRD620CT, NRVBD620VCT, SBRV620CT Series TYPICAL CHARACTERISTICS 1000 70 100 I R , REVERSE CURRENT (mA) 100 50 30 150°C 10 125°C 1.0 75°C 0.1 0.01 10 0.001 7.0 0.0001 25°C 0 40 20 30 50 VR, REVERSE VOLTAGE (VOLTS) 10 5.0 3.0 Figure 2. Typical Reverse Current,* Per Leg 150°C 2.0 125°C 1.0 0.7 0.5 0.3 0.2 75°C TC = 25°C 0.1 0 0.2 70 60 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 175°C PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 20 TJ = 175°C 0.4 0.6 0.8 1.0 1.2 1.4 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 SINE WAVE 5 10 IPK/IAV = 20 SQUARE WAVE dc TJ = 150°C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg www.onsemi.com 3 10 MBRD620CT, NRVBD620VCT, SBRV620CT Series I F(AV) , AVERAGE FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 8.0 RATED VOLTAGE APPLIED 7.0 RqJC = 6°C/W 6.0 TJ = 150°C 5.0 SINE WAVE OR SQUARE WAVE 4.0 3.0 dc 2.0 1.0 0 80 90 100 110 120 140 130 150 160 TC, CASE TEMPERATURE (°C) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case, Per Leg 4.0 RqJA = 80°C/W SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED TJ = 150°C 3.5 3.0 dc SQUARE WAVE OR SINE WAVE 2.5 VR = 25 V 2.0 1.5 VR = 60 V 1.0 0.5 0 0 20 40 60 100 80 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Ambient, Per Leg C, CAPACITANCE (pF) 1K TJ = 25°C 100 10 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg www.onsemi.com 4 70 MBRD620CT, NRVBD620VCT, SBRV620CT Series ORDERING INFORMATION Device Package Shipping† MBRD620CTT4G 2500 / Tape & Reel MBRD630CTT4G 2500 / Tape & Reel MBRD640CTG 75 Units / Rail NRVBD640CTG* 75 Units / Rail NRVBD640CTG−VF01* 75 Units / Rail MBRD640CTT4G 2500 / Tape & Reel NRVBD640CTT4G* 2500 / Tape & Reel NRVBD640VCTT4G* 2500 / Tape & Reel SBRV640VCTT4G* 2500 / Tape & Reel MBRD650CTG 75 Units / Rail MBRD650CTT4G NRVBD650CTG−VF01* 2500 / Tape & Reel DPAK (Pb−Free) 2500 / Tape & Reel NRVBD650CTT4G* 2500 / Tape & Reel NRVBD650CTT4G−VF01* 2500 / Tape & Reel MBRD660CTG 75 Units / Rail NRVBD660CTG* 75 Units / Rail NRVBD660CTG−VF01* 75 Units / Rail MBRD660CTRLG 1800 / Tape & Reel NRVBD660CTRLG* 1800 / Tape & Reel MBRD660CTT4G 2500 / Tape & Reel NRVBD660CTT4G* 2500 / Tape & Reel SBRV660VCTT4G* 2500 / Tape & Reel SNRVBD660CTT4G* 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 MBRD620CT, NRVBD620VCT, SBRV620CT Series PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E b3 B c2 Z D 1 L4 C A 4 L3 2 NOTE 7 c SIDE VIEW b TOP VIEW H DETAIL A 3 b2 e 0.005 (0.13) M GAUGE PLANE C Z C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW H L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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