MJD210T4G

Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications MJD200 (NPN), MJD210 (PNP) www.onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS Features • High DC Current Gain • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • (No Suffix) Low Collector−Emitter Saturation Voltage High Current−Gain − Bandwidth Product Annular Construction for Low Leakage Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant PNP NPN COLLECTOR 2,4 COLLECTOR 2,4 1 BASE 1 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Symbol Max Unit VCB 40 Vdc VCEO 25 Vdc VEB 8.0 Vdc IC 5.0 Adc ICM 10 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.4 0.011 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3 EMITTER 4 1 2 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW J2x0G A Y WW G = Assembly Location = Year = Work Week x = 1 or 0 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 10 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 89.3 °C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2013 October, 2019 − Rev. 14 1 Publication Order Number: MJD200/D MJD200 (NPN), MJD210 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 25 − − − 100 100 − 100 70 45 10 − 180 − − − − 0.3 0.75 1.8 − 2.5 − 1.6 65 − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125°C) ICBO Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) IEBO Vdc nAdc mAdc nAdc ON CHARACTERISTICS hFE C Current Gain (Note 3), (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 Vdc) − Collector−Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 5 Adc, IB = 1 Adc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = 2 Adc, VCE = 1 Vdc) VBE(on) Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210, NJVMJD210T4G MHz Cob pF − − 80 120 PD, POWER DISSIPATION (WATTS) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hfe⎪• ftest. TA 2.5 TC 25 2 20 VCC +30 V 25 ms RC +11 V 1.5 0 15 SCOPE RB -9 V 1 10 0.5 5 0 0 TA (SURFACE MOUNT) tr, tf ≤ 10 ns DUTY CYCLE = 1% TC D1 51 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 25 50 75 100 125 150 D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB ≈ 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB ≈ 100 mA T, TEMPERATURE (°C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit www.onsemi.com 2 MJD200 (NPN), MJD210 (PNP) 1K 10K td 500 300 200 5K 3K 2K 1K 50 30 20 tr 10 5 3 2 t, TIME (ns) t, TIME (ns) 100 ts VCC = 30 V IC/IB = 10 TJ = 25°C 500 300 200 100 50 30 20 MJD200 MJD210 1 1 2 3 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (A) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5 10 MJD200 MJD210 tf 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (A) Figure 3. Turn−On Time Figure 4. Turn−Off Time www.onsemi.com 3 3 5 10 MJD200 (NPN), MJD210 (PNP) NPN MJD200 400 PNP MJD210 400 TJ = 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 25°C 200 -55°C 100 80 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 0.5 0.7 1 2 0.2 0.3 IC, COLLECTOR CURRENT (A) 3 TJ = 150°C 200 25°C 100 80 -55°C 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 5 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 3 5 Figure 5. DC Current Gain 2 2 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 2 3 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 5 2 3 5 3 5 Figure 6. “On” Voltage +2 +2.5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) +2.5 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1 +0.5 25°C to 150°C qVC for VCE(sat) 0 -0.5 -55°C to 25°C -1 25°C to 150°C -1.5 qVB for VBE -2 -2.5 0.05 0.07 0.1 -55°C to 25°C 0.2 0.3 0.5 0.7 1 2 3 +2 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 25°C to 150°C +1 +0.5 *qVC for VCE(sat) 0 -55°C to 25°C -0.5 25°C to 150°C -1 -1.5 qVB for VBE -2 -2.5 0.05 0.07 0.1 5 -55°C to 25°C IC, COLLECTOR CURRENT (A) 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) Figure 7. Temperature Coefficients www.onsemi.com 4 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD200 (NPN), MJD210 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.1 0.07 0.05 0.02 0.01 0.03 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 8. Thermal Response 5 3 2 1 0.1 0.01 0.3 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5ms TJ = 150°C 100ms 1ms 500ms dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) 30 Figure 9. Active Region Safe Operating Area 200 TJ = 25°C C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 10 Cib 100 70 50 Cob MJD200 (NPN) MJD210 (PNP) 30 20 0.4 0.6 1 2 4 6 10 VR, REVERSE VOLTAGE (V) Figure 10. Capacitance www.onsemi.com 5 20 40 MJD200 (NPN), MJD210 (PNP) ORDERING INFORMATION Package Type Shipping† MJD200G DPAK (Pb−Free) 75 Units / Rail MJD200RLG DPAK (Pb−Free) 1,800 / Tape & Reel MJD200T4G DPAK (Pb−Free) 2,500 / Tape & Reel MJD210G DPAK (Pb−Free) 75 Units / Rail MJD210RLG DPAK (Pb−Free) 1,800 / Tape & Reel MJD210T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVMJD210T4G* DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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