MJD47T4G

MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • (No Suffix) Electrically Similar to Popular TIP47, and TIP50 Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS, 15 WATTS COLLECTOR 2, 4 1 BASE MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage MJD47, NJVMJD47T4G MJD50, NJVMJD50T4G VCEO Collector−Base Voltage MJD47, NJVMJD47T4G MJD50, NJVMJD50T4G VCB Emitter−Base Voltage VEB 5 Vdc IC 1 Adc ICM 2 Adc Base Current IB 0.6 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 0.0125 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector Current − Continuous Collector Current − Peak 3 EMITTER Vdc 250 400 4 Vdc 350 500 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW JxxG A Y WW Jxx G = Assembly Location = Year = Work Week = Device Code xx = 47 or 50 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 15 1 Publication Order Number: MJD47/D MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Case Characteristic RqJC 8.33 °C/W Thermal Resistance Junction−to−Ambient (Note 2) RqJA 80 °C/W TL 260 °C Lead Temperature for Soldering Purpose ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47, NJVMJD47T4G MJD50, NJVMJD50T4G VCEO(sus) Vdc 250 400 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) MJD47, NJVMJD47T4G (VCE = 300 Vdc, IB = 0) MJD50, NJVMJD50T4G ICEO Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) MJD47, NJVMJD47T4G (VCE = 500 Vdc, VBE = 0) MJD50, NJVMJD50T4G ICES Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − − mAdc − 0.2 − 0.2 mAdc − 0.1 − 0.1 − 1 30 10 150 − − 1 − 1.5 10 − 25 − mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz) fT Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MHz − MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 Vin 0 VEB(off) 1.5 15 0 50 75 100 125 Figure 2. Switching Time Equivalent Circuit 1.4 200 VCE = 10 V 1.2 TJ = 150°C V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 60 40 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. TURN-OFF PULSE Figure 1. Power Derating 25°C 20 -55°C 10 1 VBE(sat) @ IC/IB = 5 0.8 VBE(on) @ VCE = 4 V 0.6 TJ = 25°C 0.4 6 4 2 0.02 0.2 0.2 0.4 0.6 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMPS) 2 1 0 0.02 VCE(sat) @ IC/IB = 5 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain 1 0.7 0.5 Figure 4. “On” Voltages 0.1 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.01 2 0.2 0.2 0.03 1 D = 0.5 0.3 0.1 0.07 0.05 -4 V DUTY CYCLE ≈ 2% APPROX -9 V t2 150 T, TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Cjd