MJE15032G

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • • • • • High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MAXIMUM RATINGS Rating COMPLEMENTARY Symbol Value Unit VCEO 250 Vdc Collector−Base Voltage VCB 250 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 8.0 Adc ICM 16 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.40 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C – 65 to + 150 _C Collector−Emitter Voltage Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range TJ, Tstg ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. COLLECTOR 2, 4 1 BASE COLLECTOR 2, 4 1 BASE 3 EMITTER 3 EMITTER MARKING DIAGRAM 4 TO−220 CASE 221A STYLE 1 1 2 MJE1503xG AYWW 3 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Case RqJC Thermal Resistance, Junction−to−Ambient RqJA Max Unit _C/W 2.5 _C/W 62.5 MJE1503x = Specific Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 6 1 Device Package Shipping MJE15032G TO−220 (Pb−Free) 50 Units/Rail MJE15033G TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MJE15032/D MJE15032 (NPN), MJE15033 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max 250 − − 10 − 10 70 50 10 − − − − 0.5 − 1.0 30 − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE15032 (NPN), MJE15033 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 10 50ms 250ms 10ms 1.0 0.1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 2. MJE15032 & MJE15033 Safe Operating Area PD, POWER DISSIPATION (WATTS) 0.01 1.0 TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 120 140 160 MJE15032 (NPN), MJE15033 (PNP) NPN − MJE15032 PNP − MJE15033 1000 1000 h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN 150°C 25°C 100 -55°C 10 1.0 150°C 100 25°C -55°C 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 10 V, VOLTAGE (VOLTS) 10 V, VOLTAGE (VOLTS) 10 Figure 5. PNP − MJE15033 VCE = 5 V DC Current Gain Figure 4. NPN − MJE15032 VCE = 5 V DC Current Gain -55°C 1.0 25°C 150°C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 25°C 150°C 0.1 10 -55°C 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. PNP − MJE15033 VCE = 5 V VBE(on) Curve Figure 6. NPN − MJE15032 VCE = 5 V VBE(on) Curve 10 100 150°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (AMPS) 25°C 1.0 -55°C 0.1 10 25°C 1.0 -55°C 150°C 0.1 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. PNP − MJE15033 VCE(sat) IC/IB = 10 Figure 8. NPN − MJE15032 VCE(sat) IC/IB = 10 http://onsemi.com 4 10 MJE15032 (NPN), MJE15033 (PNP) NPN − MJE15032 PNP − MJE15033 100 150°C 150°C 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100 25°C 1.0 -55°C 0.1 25°C 10 -55°C 1.0 0.1 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 10. NPN − MJE15032 VCE(sat) IC/IB = 20 Figure 11. PNP − MJE15033 VCE(sat) IC/IB = 20 10 V BE, BASE EMITTER VOLTAGE (VOLTS) V BE, BASE EMITTER VOLTAGE (VOLTS) 10 1.0 10 -55°C 25°C 150°C 0.1 1.0 -55°C 25°C 150°C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 Figure 12. NPN − MJE15032 VBE(sat) IC/IB = 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 13. PNP − MJE15033 VBE(sat) IC/IB = 10 http://onsemi.com 5 10 MJE15032 (NPN), MJE15033 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE15032/D