MMBFJ111

Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G G S S TO-92 SOT-23 D Figure 1. J111 / J112 / J113 Device Package D Note: Source & Drain are interchangeable Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113 Device Package Ordering Information Part Number Top Mark Package Packing Method J111 J111 TO-92 3L Bulk J111-D26Z J111 TO-92 3L Tape and Reel J111-D74Z J111 TO-92 3L Ammo J112 J112 TO-92 3L Bulk J112-D26Z J112 TO-92 3L Tape and Reel J112-D27Z J112 TO-92 3L Tape and Reel J112-D74Z J112 TO-92 3L Ammo J113 J113 TO-92 3L Bulk J113-D74Z J113 TO-92 3L Ammo J113-D75Z J113 TO-92 3L Ammo MMBFJ111 6P SOT-23 3L Tape and Reel MMBFJ112 6R SOT-23 3L Tape and Reel MMBFJ113 6S SOT-23 3L Tape and Reel © 1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: MMBFJ113/D J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 50 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Max. J111 / J112 / J113(3) MMBFJ111 / MMBFJ112 / MMBFJ113(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction-to-Case 125 RθJA Thermal Resistance, Junction-to-Ambient 200 Symbol PD Parameter °C/W 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. www.onsemi.com 2 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Absolute Maximum Ratings(1), (2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) ID(off) Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 Gate Reverse Current VGS = -15 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 μA Drain Cutoff Leakage Current -35 V -1.0 111 -3.0 -10.0 112 -1.0 -5.0 113 -0.5 -3.0 VDS = 5.0 V, VGS = -10 V 1.0 nA V nA On Characteristics IDSS (5) Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 111 20 112 5.0 113 2.0 111 rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 mA 30 112 50 113 100 Ω Small Signal Characteristics Cdg(on) Csg(on) Drain-Gate &Source-Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz 28 pF Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 5.0 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 5.0 pF Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. www.onsemi.com 3 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Electrical Characteristics - TRANSCONDUCTANCE (mmhos) 6 - 0.6 V 4 - 0.8 V - 1.0 V D 2 0 - 1.2 V fs I - 1.4 V 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) 2 g - DRAIN CURRENT (mA) - 0.4 V r DS 50 50 g 20 I DSS _5 - DRAIN CURRENT (mA) 125°C 25°C - 55°C V DS = 15 V _ 5 10 VGS(off) = - 1.6 V V DS = 15 V - 55°C 25°C 125°C 12 8 VGS(off) = - 1.1 V 125°C 25°C - 55°C D 4 I I D - DRAIN CURRENT (mA) 25°C 125°C VGS(off) = - 2.0 V 0 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) - TRANSCONDUCTANCE (mmhos) 30 VGS(off) = - 3.0 V - 55°C 25°C 125°C 20 VGS(off) = - 2.0 V - 55°C 25°C 125°C 10 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) -3 Figure 7. Transfer Characteristics g fs V DS = 15 V 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Figure 6. Transfer Characteristics Figure 5. Transfer Characteristics g fs - TRANSCONDUCTANCE (mmhos) _ 2 5 - GATE CUTOFF VOLTAGE (V) 10 Figure 4. Parameter Interactions 16 10 _ 1 V GS (OFF) - 55°C 20 _ 0.5 VGS(off) = - 3.0 V 30 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA 10 Figure 3. Common Drain-Source 40 20 fs 30 V GS(off) = - 1.6 V - 55°C 25°C 125°C 20 VGS(off) = - 1.1 V 10 - 55°C 25°C 125°C V DS = 15 V 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Figure 8. Transfer Characteristics www.onsemi.com 4 - DRAIN "ON" RESISTANCE (Ω Ω) - 0.2 V 8 100 100 DS T A = 25°C TYP V GS(off) = - 2.0 V V GS = 0 V r 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Typical Performance Characteristics r DS - NORMALIZED RESISTANCE ( Ω ) r DS - DRAIN "ON" RESISTANCE (Ω) 100 125°C V GS(off) TYP = - 2.0V 50 25°C 125°C V GS(off) - 55°C TYP = - 7.0V 20 25°C r DS @ V GS = 0 - 55°C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 TA = 25°C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V 1 I D - DRAIN CURRENT (mA) 10 Figure 11. Transconductance vs. Drain Current √ e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) T A = 25°C C is (V DS = 0) C is (V DS = 20) C rs (V DS = 0) 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) V DG = 5.0V 5.0V f = 1.0 kHz 10 10V 15V 20V V GS(off) = - 5.0V 20V 1 5.0V 10V 15V 10V 15V 20V V GS(off) = - 2.0V V GS(off) = - 0.85V 0.1 0.01 100 f = 0.1 - 1.0 MHz 1 10 V GS 1 -________ V GS(off) 0.1 I D - DRAIN CURRENT (mA) 10 Figure 12. Output Conductance vs. Drain Current 100 10 r DS = 100 os V GS(off) = - 3.0V 1 0.1 r DS 20 Figure 10. Normalized Drain Resistance vs. Bias Voltage - OUTPUT CONDUCTANCE ( μ mhos) 100 V GS(off) @ 5.0V, 10 μA 50 g g fs - TRANSCONDUCTANCE (mmhos) Figure 9. On Resistance vs. Drain Current 100 -20 Figure 13. Capacitance vs. Voltage V DG = 15V 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 1 10 f - FREQUENCY (kHz) Figure 14. Noise Voltage vs. Frequency www.onsemi.com 5 100 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Typical Performance Characteristics (Continued) V DG = 15V P D - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / √ Hz) 100 f = 10 Hz f = 100 Hz f = 1.0 kHz 10 f = 10 kHz f = 100 kHz 1 0.01 I D 0.1 1 - DRAIN CURRENT (mA) 700 600 300 200 100 0 10 t r APPROX. I D INDEPENDENT VGS(off) = 3.0V 15 T A = 25°C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) Figure 17. Switching Turn-On Time vs. Gate-Source Voltage t d(OFF) ,t OFF - TURN-OFF TIME (ns) t r(ON) ,t d(ON)- TURN-ON TIME (ns) 20 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 16. Power Dissipation vs. Ambient Temperature V DD = 3.0V t r (ON) SOT-23 400 Figure 15. Noise Voltage vs. Current 25 TO-92 500 100 T A = 25°C VGS(off)= -2.2V 80 t (off) 60 - 7.5V t d(off) DEVICE V GS(off) INDEPENDENT 40 20 0 V DD = 3.0V V GS = -12V - 4.0V t d(off) 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 Figure 18. Switching Turn-Off Time vs. Drain Current www.onsemi.com 6 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Typical Performance Characteristics (Continued) D Figure 19. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type www.onsemi.com 7 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions (Continued) Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type www.onsemi.com 8 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 9 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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