MMBFJ309LT1G

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage Rating VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C Gate Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 10 MARKING DIAGRAM PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 6x M G G 1 6x M G = Device Code x = U for MMBFJ309L, SMMBFJ309L x = T for MMBFJ310L, SMMBFJ310L = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBFJ309LT1G, SMMBFJ309LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBFJ310LT1G, SMMBFJ310LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBFJ310LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 7 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS −25 − − Vdc IGSS − − − − −1.0 −1.0 nAdc mAdc MMBFJ309 MMBFJ310, SMMBFJ310 VGS(off) −1.0 −2.0 − − −4.0 −6.5 Vdc MMBFJ309 MMBFJ310, SMMBFJ310 IDSS 12 24 − − 30 60 mAdc VGS(f) − − 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 − 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| − − 250 mmhos Input Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − − 5.0 pF Reverse Transfer Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − − 2.5 pF Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en − 10 − nVń ǸHz OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc) Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS http://onsemi.com 2 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = -55°C 50 50 +25°C IDSS +25°C 40 40 30 30 +150°C 20 20 +25°C -55°C 10 10 +150°C -5.0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 10 1.0 k Yfs Yfs 10 k 100 1.0 k Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 120 RDS 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 100 0.01 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 9.0 ID, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common−Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate−Source Voltage http://onsemi.com 3 0 0 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (μ mhos) CAPACITANCE (pF) Yfs , FORWARD TRANSCONDUCTANCE (μmhos) Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 24 |S12|, |S22| 3.0 0.060 1.00 2.4 0.79 0.39 S22 VDS = 10 V ID = 10 mA TA = 25°C 0.048 0.98 S21 Y11 18 1.8 Y21 12 1.2 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 0.55 0.15 100 1000 Figure 4. Common−Gate Y Parameter Magnitude versus Frequency q21, q11 180° 50° 40° 160° 30° 150° 20° 140° 10° 200 300 500 f, FREQUENCY (MHz) q11, q12 -20° 120° q21, q22 -40° 86° -40° 100° 85° -60° 80° -120° 84° -80° 60° -100° 40° -120° 20° 100 0 q11 -20° q21 700 1000 Figure 5. Common−Gate S Parameter Magnitude versus Frequency q12, q22 -20° 87° q22 170° 0.036 0.96 S11 Y22 6.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 q21 q22 -20° -60° -80° -40° -100° q12 q11 130° 0° 100 -140° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) -60° q12 -160° 83° -180° 700 q21 -200° 82° 1000 Figure 6. Common−Gate Y Parameter Phase−Angle versus Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 700 -80° -100° 1000 Figure 7. S Parameter Phase−Angle versus Frequency http://onsemi.com 4 0.90 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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