MMBT5087LT1G

MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter −Base Voltage VEBO −3.0 Vdc IC −50 mAdc Collector Current − Continuous Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 1 2 THERMAL CHARACTERISTICS Characteristic 2 EMITTER Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C SOT−23 (TO−236) CASE 318 STYLE 6 PD RqJA MARKING DIAGRAM 2Q M G G PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 2Q = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package MMBT5087LT1G, SOT−23 NSVMMBT5087LT1G (Pb−Free) Shipping† 3,000 / Tape & Reel MMBT5087LT3G, SOT−23 10,000 / Tape & NSVMMBT5087LT3G (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: MMBT5087LT1/D MMBT5087L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − Vdc Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −50 − Vdc − − −10 −50 250 250 250 800 − − OFF CHARACTERISTICS Collector Cutoff Current (VCB = −10 Vdc, IE = 0) (VCB = −35 Vdc, IE = 0) ICBO nAdc ON CHARACTERISTICS DC Current Gain (IC = −100 mAdc, VCE = −5.0 Vdc) (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) VCE(sat) − −0.3 Vdc Base−Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) VBE(sat) − 0.85 Vdc fT 40 − MHz Cobo − 4.0 pF Small−Signal Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz) hfe 250 900 − Noise Figure (IC = −20 mAdc, VCE = −5.0 Vdc, RS = 10 kW, f = 1.0 kHz) (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz) NF − − 2.0 2.0 SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = −500 mAdc, VCE = −5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL NOISE CHARACTERISTICS (VCE = −  5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 mA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 mA 3.0 100 mA 300 mA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 mA 1.0 0.7 0.5 100 mA 30 mA 0.3 0.2 1.0 10 mA 0.1 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 10k 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current www.onsemi.com 2 5.0k 10k MMBT5087L NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = −  5.0 Vdc, TA = 25°C) 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 5.0 dB 10 1.0M 500k 500 700 1.0k 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF + 20 log10 20k 10k 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 ƫ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 5.0k 2.0k 1.0k 500 ƪ 500 700 1.0k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband www.onsemi.com 3 MMBT5087L 100 1.0 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 150 mA 40 100 mA 20 50 mA 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.2 V, VOLTAGE (VOLTS) 40 Figure 7. Collector Characteristics TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 250 mA 200 mA 0 5.0 10 1.4 0.2 350 mA 60 Figure 6. Collector Saturation Region 0.1 IB = 400 mA 50 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) - 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 100 25°C to 125°C 0 Figure 8. “On” Voltages qVB for VBE 0.2 - 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. Temperature Coefficients www.onsemi.com 4 50 100 MMBT5087L TYPICAL DYNAMIC CHARACTERISTICS 1000 700 500 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 300 ts 300 200 100 70 50 t, TIME (ns) t, TIME (ns) 200 30 tr 20 10 7.0 5.0 1.0 100 70 50 tf 30 td @ VBE(off) = 0.5 V 20 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 -  2.0 -  3.0 -  5.0 -  7.0 -10 -  20 -  30 IC, COLLECTOR CURRENT (mA) Figure 10. Turn−On Time -  50 -  70 -100 Figure 11. Turn−Off Time 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) VCC = -  3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 12. Current−Gain — Bandwidth Product Figure 13. Capacitance www.onsemi.com 5 10 20 50 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBT5087L 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 16 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569/D) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 14. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 V A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 14 by the steady state value RqJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Typical Collector Leakage Current www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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