MMBT6429LT1G

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon www.onsemi.com Features COLLECTOR 3 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER 3 SOT−23 (TO−236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage VCEO 50 45 Vdc Collector −Base Voltage VCBO 60 55 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current − Continuous 1 2 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XXX MG G 1 THERMAL CHARACTERISTICS Rating Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Value Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. XXX = Specific Device Code MMBT6428LT1 − 1KM NSV/MMBT6429LT1 − M1L M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MMBT6428LT1G SOT−23 (Pb−Free) 3000 Tape & Reel MMBT6429LT1G SOT−23 (Pb−Free) 3000 Tape & Reel NSVMMBT6429LT1G SOT−23 (Pb−Free) 3000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2017 − Rev. 8 1 Publication Order Number: MMBT6428LT1/D MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 50 45 − − 60 55 − − − 0.1 − 0.01 − 0.01 MMBT6428 MMBT6429 / NSVMMBT6429 250 500 − − (IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428 MMBT6429 / NSVMMBT6429 250 500 650 1250 (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT6428 MMBT6429 / NSVMMBT6429 250 500 − − (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT6428 MMBT6429 / NSVMMBT6429 250 500 − − − − 0.2 0.6 0.56 0.66 100 700 − 3.0 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) MMBT6428 MMBT6429 / NSVMMBT6429 V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) MMBT6428 MMBT6429 / NSVMMBT6429 Vdc V(BR)CBO Collector Cutoff Current (VCE = 30 Vdc) ICES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2 MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS ≈ 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 mA 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 mA 1.0 mA 300 mA 0.3 100 mA 0.2 RS ≈ 0 0.1 10 20 10 mA 50 100 200 10 16 3.0 1.0 0.7 0.5 5.0 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 8.0 IC = 1.0 mA 100 mA 10 mA 4.0 30 mA 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 16 100 mA 100 70 50 NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 3.0 mA 1.0 mA 30 300 mA 20 10 7.0 5.0 30 mA 10 mA IC = 10 mA 3.0 mA 1.0 mA 12 300 mA 8.0 100 mA 30 mA 4.0 10 mA BANDWIDTH = 1.0 Hz 0 3.0 10 20 10 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure www.onsemi.com 3 h FE, DC CURRENT GAIN (NORMALIZED) MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 -55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 0.1 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 RθVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ °C) -0.4 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 -0.8 -1.2 TJ = 25°C to 125°C -1.6 -2.0 -55°C to 25°C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 9. “On” Voltages 20 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current−Gain — Bandwidth Product www.onsemi.com 4 MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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