MMBTH10LT1G

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features • S and NSV Prefixes for Automotive and Other Applications • SOT−23 (TO−236) CASE 318 STYLE 6 Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Symbol Max Unit 3EM MG G 3E4 MG G 225 1.8 mW mW/°C MMBTH10LT1G, NSVMMBTH10LT1G MMBTH10−04LT1G 556 °C/W 3EM, 3E4 = Specific Device Code M = Date Code* G = Pb−Free Package 300 2.4 mW mW/°C *Date Code orientation and/or overbar may vary depending upon manufacturing location. RθJA 417 °C/W TJ, Tstg −55 to +150 2 EMITTER MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range PD RθJA PD (Note: Microdot may be in either location) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina ORDERING INFORMATION Device Package Shipping† MMBTH10LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVMMBTH10LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTH10−4LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTH10LT3G, SMMBTH10−4LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: MMBTH10LT1/D MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 25 − − 30 − − 3.0 − − − − 100 − − 100 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 100 μAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 10 μAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) MMBTH10LT1G, NSVMMBTH10LT1G MMBTH10−4LT1G, SMMBTH10−4LT3G hFE Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) − 60 120 − − − 240 − − 0.5 − − 0.95 VCE(sat) Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) Vdc VBE Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz) MMBTH10LT1G, NSVMMBTH10LT1G MMBTH10−4LT1G, SMMBTH10−4LT3G fT Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Ccb Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Crb Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) MHz 650 800 − − − − − − 0.7 − − 0.65 − − 9.0 pF pF rb′Cc ps Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE 0 70 gib -10 60 -20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 -bib 40 30 1000 MHz -30 700 -40 20 400 10 0 200 -50 100 200 300 400 500 f, FREQUENCY (MHz) 700 -60 1000 0 20 10 Figure 1. Rectangular Form 30 40 50 gib (mmhos) 60 100 70 80 Figure 2. Polar Form 70 60 bfb 60 400 200 50 50 600 100 40 700 -gfb 30 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 40 30 1000 MHz 0 -10 20 -20 -30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 Figure 3. Rectangular Form 60 50 40 10 30 20 gfb (mmhos) 0 Figure 4. Polar Form www.onsemi.com 3 -10 -20 -30 MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) 0 5.0 100 4.0 200 -1.0 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) yrb, REVERSE TRANSFER ADMITTANCE 3.0 400 -2.0 -brb -brb 2.0 -3.0 700 MPS H10 1.0 -4.0 -grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 1000 MHz 700 1000 -5.0 -2.0 -1.8 -1.2 -0.8 Figure 5. Rectangular Form -0.4 0 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 9.0 8.0 8.0 7.0 700 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 6.0 5.0 bob 4.0 6.0 4.0 400 3.0 200 2.0 2.0 gob 1.0 100 0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 0 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form www.onsemi.com 4 8.0 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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