MPSA06

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MPSA06 / MMBTA06 / PZTA06 NPN General-Purpose Amplifier Features • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12. MPSA06 MMBTA06 PZTA06 C C E E C B TO-92 B SOT-23 SOT-223 Mark: 1G E B C Ordering Information Part Number Top Mark Package Packing Method MPSA06 MPSA06 TO-92 3L Bulk MMBTA06 1G SOT-23 3L Tape and Reel PZTA06 A06 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit 80 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.0 V Collector Current - Continuous 500 mA -55 to +150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier September 2014 Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter Unit MPSA06 MMBTA06(3) PZTA06(4) Total Device Dissipation 625 350 1000 mW Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction-to-Case 83.3 RθJA Thermal Resistance, Junction-to-Ambient 200 357 125 PD °C/W °C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 4.0 V ICEO Collector Cut-Off Current VCE = 60 V, IB = 0 0.1 μA ICBO Collector Cut-Off Current VCB = 80 V, IE = 0 0.1 μA On Characteristics hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 100 IC = 100 mA, VCE = 1.0 V 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 1.0 V 1.2 V Small Signal Characteristics fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V, f = 100 MHz 100 MHz Notes: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com 2 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Thermal Characteristics β V CESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN 200 VCE = 1V 125 °C 150 25 °C 100 - 40 °C 50 0.001 IC 0.01 0.1 - COLLECTOR CURRENT (A) - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 10 100 I C - COLLECTOR CURRE NT (mA) 0.4 0.3 1000 - 40 °C 0 0.1 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 VCE = 5V 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 Figure 4. Base-Emitter On Voltage vs. Collector Current 2.0 10 VCE(SAT), Collector Emitter Voltage (V) I CBO - COLLE CTOR CURRENT (nA) 25 °C 0.1 Figure 3. Base-Emitter Saturation Voltage vs. Collector Current VCB = 80 V 1 0.1 0.01 0.001 25 125 °C 0.2 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTE R VOLTAGE (V) β = 10 0.1 β = 10 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current 1 0.5 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 125 IC=10mA 1.6 IC=50mA 1.4 IC=100mA 1.2 IC=250mA 1.0 IC=500mA 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 IB - Base Current (mA) Figure 5. Collector Cut-Off Current vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 1.8 Figure 6. Collector Saturation Region www.fairchildsemi.com 3 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Typical Performance Characteristics f = 1.0 MHz CAPACITANCE (pF) BV CER - BREAKDOWN VOLTAGE (V) 100 117 116 115 114 113 C ib 10 Cob 1 112 111 0.1 1 10 100 0.1 0.1 1000 RESISTANCE (k Ω) 400 100 1 V CE = 5V P D - POWER DISSIPATION (W) f T - GAIN BANDWIDTH PRODUCT (MHz) 10 Figure 8. Input and Output Capacitance vs. Reverse Current Figure 7. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 350 300 250 200 150 10 20 50 100 I C - COLLECTOR CURRENT (mA) Figure 9. Gain Bandwidth Product vs. Collector Current © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 100 1 1 V CE - COLLECTOR VOLTAGE (V) 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 10. Power Dissipation vs. Ambient Temperature www.fairchildsemi.com 4 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Physical Dimensions D Figure 11. 3-LEAD, TO-92, MOLDED, STD STRAIGHT LEAD (NO EOL CODE) © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com 5 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Physical Dimensions (Continued) 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com 6 MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier Physical Dimensions (Continued) Figure 13. MOLDED PACKAGING, SOT-223, 4-LEAD © 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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