NCV4263-2CPD50R2G

NCV4263-2C LDO Regulator - Enable, Reset, Watchdog 200 mA The NCV4263−2C is a 200 mA LDO regulator with integrated reset watchdog functions dedicated for microprocessor applications. Its robustness allows NCV4263−2C to be used in severe automotive environments. The Enable function can be used for decrease of quiescent current down to max 10 mA. The NCV4263−2C contains protection functions as current limit, thermal shutdown and reverse output current protection. The regulator provides also Watchdog, Reset function with adjustable Threshold and adjustable Power−on Reset Delay Time. www.onsemi.com MARKING DIAGRAMS 8 8 1 Features • • • • • • • • • • Output Voltage Option: 5 V Output Voltage Accuracy: ±2% Output Current up to 200 mA Very Low Dropout Voltage Enable Function (10 mA Max Quiescent Current when Disabled) Microprocessor Compatible Control Functions: − Reset with Adjustable Threshold and Adjustable Power−on Delay − Watchdog Function Wide Input Voltage Operation Range: up to 40 V Protection Features: − Current Limitation − Thermal Shutdown − Reverse Output Current AEC−Q100 Grade 1 Qualified and PPAP Capable These are Pb−Free Devices V632C5 ALYWX SOIC−8 EP PD SUFFIX CASE 751AC 1 14 14 1 SOIC−14 D SUFFIX CASE 751A NCV4263−2C50G AWLYWWG 1 A L, WL Y W, WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. Typical Applications • • • • Body Control Module Instruments and Clusters Occupant Protection and Comfort Powertrain Vin Vout Vin Cin 100 nF NCV4263−2C Cout 22 mF RADJ OFF ON EN GND RO WDI D VDD RRO* 5.6 kW Microprocessor RESET I/O CD 100 nF *−optional if Reset function is needed Figure 1. Application Schematic © Semiconductor Components Industries, LLC, 2015 September, 2019 − Rev. 1 1 Publication Order Number: NCV4263−2C/D NCV4263−2C Vin Vout VOLTAGE VREF REFERENCE RO SP ENABLE EN WDI SATURATION VREF SP PROTECTION RESET GENERATOR and WATCHDOG TSD THERMAL D TSD SHUTDOWN RADJ GND Figure 2. Simplified Block Diagram Vin 1 8 RO 14 EN Vin NC Vout EN WDI RO RADJ GND 1 D SOIC−8 EP GND GND GND GND GND GND D Vout RADJ WDI SOIC−14 Figure 3. Pin Connections (Top View) PIN FUNCTION DESCRIPTION Pin No. SO−8 EP Pin No. SO−14 Pin Name 1 13 Vin Positive Power Supply. Connect ceramic capacitor to ground. 2 14 EN Enable Input. Low level disables the chip. Connect to Vin if this function is not needed. 3 1 RO Reset Output; Open Collector connected to the Vout via an internal 30 kW pull−up resistor; leave open if the function is not needed 4 3, 4, 5, 10, 11, 12 GND 5 6 D 6 7 RADJ 7 8 WDI Watchdog Input. Rising edge triggered Input for watchdog pulses. Connect to GND if this function is not needed. 8 9 Vout Regulated Output Voltage. Connect a Cout ≥ 22 mF capacitor to ground. EPAD − Exposed Pad − 2 NC Description Power Supply Ground. Connect pins to heat sink area with GND potential. DelayTiming. Connect to GND via ceramic capacitor for adjusting reset delay timing and watchdog trigger time or leave open if this function is not needed. Reset Adjust Threshold. Connect to GND (VRT = 93% of Vout) or to output voltage divider to adjust the reset threshold. Connect to ground potential or leave unconnected. Not connected. No internally bonded. www.onsemi.com 2 NCV4263−2C ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit Input Voltage (Note 1) Rating Vin −42 45 V Enable Input VEN −42 45 V Output Voltage Vout −1 7 V Reset Output Voltage VRO −0.3 7 V Watchdog Input Voltage VWDI −0.3 7 V Reset Adjust Threshold VRADJ −0.3 7 V Delay Timing Output Voltage VD −0.3 7 V Maximum Junction Temperature TJ −40 150 °C TSTG −55 150 °C Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. ESD CAPABILITY (Note 2) Rating Symbol Min Max Unit ESD Capability, Human Body Model ESDHBM − 2 kV ESD Capability, Charged Device Model ESDCDM − 1 kV Min Max Unit 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010) ESD Charged Device Model tested per AEC−Q100−011 (EIA/JESD22−C101) LEAD SOLDERING TEMPERATURE AND MSL (Note 3) Rating Symbol Moisture Sensitivity Level SOIC−14 SOIC−8 EP MSL Lead Temperature Soldering Reflow (SMD Styles Only), Pb−Free Versions TSLD − 1 2 − 265 peak °C 3. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D THERMAL CHARACTERISTICS Rating Symbol Value Thermal Characteristics, SOIC−8 Exposed Pad (Note 4) Thermal Resistance, Junction−to−Air (Note 5) Thermal Reference, Junction−to−Pad (Note 5) RθJA YψJPad 65.1 8.7 Thermal Characteristics, SOIC−14 (Note 4) Thermal Resistance, Junction−to−Air (Note 5) Thermal Reference, Junction−to−Pin4 (Note 5) RθJA YψJP4 94.8 18.3 Unit °C/W °C/W 4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 5. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. OPERATING RANGES (Note 6) Rating Symbol Min Max Unit Input Voltage Vin 5.5 40 V Junction Temperature TJ −40 150 °C 6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. www.onsemi.com 3 NCV4263−2C ELECTRICAL CHARACTERISTICS Vin = 13.5 V, VEN = 5 V, Cin = 100 nF, Cout = 22 mF, ESR = 1.5 W, WDI = 5 V pulses, fWDI = 1 kHz. Min and Max values are valid for temperature range *40°C v TJ v 150°C unless otherwise noted and are guaranteed by test design or statistical correlation. Typical values are referenced to TJ = 25°C. (Notes 7 and 8) Test Conditions Parameter Symbol Min Typ Max Unit Vout 4.90 5.0 5.10 V REGULATOR OUTPUT Output Voltage Accuracy Vin = 6 V to 40 V, Iout = 5 to 150 mA Line Regulation Iout = 150 mA, Vin = 6 V to 28 V Regline −25 3 25 mV Load Regulation Iout = 5 mA to 150 mA Regload −25 − 25 mV Dropout Voltage (Note 9) Iout = 150 mA VDO − 300 500 mV IDIS − 0.066 10 mA − − − 0.275 3 11.3 1.3 18 23 ILIM 200 418 500 mA PSRR − 80 − dB − 0.8 2.0 1.74 3.5 − DISABLE AND QUIESCENT CURRENTS Disable Current Quiescent Current, Iq = Iin − Iout VEN = 0 V,TJ < 125°C Iq Iout = 0 mA Iout = 150 mA Iout = 150 mA, Vin = 4.5 V mA CURRENT LIMIT PROTECTION Current Limit Vout = 0.96 x Vout_nom PSRR Power Supply Ripple Rejection (Note 10) f = 100 Hz, 0.5 Vp−p ENABLE Vth(EN) V Enable Input Threshold Voltage Logic High Logic Low Vout w 0.9 x Vout_nom Vout v 0.1 V Enable Input Current VEN = 5 V IEN 5 10 25 mA Watchdog Input Low Time CD = 100 nF, Vout > VRT, no WDI signal tWL 1 2 3.5 ms Watchdog Trigger Time CD = 100 nF, Vout > VRT, no WDI signal tWTT 16 20.8 27 ms WATCHDOG INPUT DELAY TIMING Charge Current VD = 1 V, no WDI signal ID_charge 40 66.8 95 mA Discharge Current VD = 1 V, no WDI signal ID_disch 4.40 6.54 9.40 mA Saturation Voltage Vout < VRT, no WDI signal VD_sat − 6 100 mV VthH(D) VthL(D) 1.45 0.2 1.70 0.34 2.05 0.55 VRT 90 93 96 % Vout Vth(RADJ) 1.26 1.36 1.44 V VRT_range 70 − 93 % Vout Switching Threshold Upper Lower V RESET OUTPUT Output Voltage Reset Threshold (Note 11) Vout decreasing, VRADJ = 0 V Reset Adjust Threshold (70% of Vout_nom) v Vout < (VRT) Reset Adjustment Range (Note 12) Reset Output Low Voltage IRO = 1 mA VROL − 0.01 0.4 V Reset Delay Time CD = 100 nF tRD 1.3 2.6 4.1 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.5 V. 10. Values based on design and/or characterization. 11. See APPLICATION INFORMATION section for Reset Threshold Adjustment 12. VRT_range limits are guaranteed by VRT and Vth(RADJ) parameters. www.onsemi.com 4 NCV4263−2C ELECTRICAL CHARACTERISTICS Vin = 13.5 V, VEN = 5 V, Cin = 100 nF, Cout = 22 mF, ESR = 1.5 W, WDI = 5 V pulses, fWDI = 1 kHz. Min and Max values are valid for temperature range *40°C v TJ v 150°C unless otherwise noted and are guaranteed by test design or statistical correlation. Typical values are referenced to TJ = 25°C. (Notes 7 and 8) Parameter Test Conditions Symbol Min Typ Max Unit CD = 100 nF tRR 0.5 1.2 4 ms Iout = 1 mA TSD 150 177 195 °C RESET OUTPUT Reset Reaction Time THERMAL SHUTDOWN Thermal Shutdown Temperature (Note 10) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.5 V. 10. Values based on design and/or characterization. 11. See APPLICATION INFORMATION section for Reset Threshold Adjustment 12. VRT_range limits are guaranteed by VRT and Vth(RADJ) parameters. www.onsemi.com 5 NCV4263−2C TYPICAL CHARACTERISTICS 16 Vin = 13.5 V Iout = 0 mA 0.30 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 0.32 0.28 0.26 0.24 0.22 0.20 −40 −20 0 20 40 60 80 4 2 0 5 10 15 20 25 30 40 Figure 5. Quiescent Current vs. Input Voltage Vin = 13.5 V Iout = 5 mA 5.08 Vin = 13.5 V TJ = 25°C 8 35 Figure 4. Quiescent Current vs. Temperature Vout, OUTPUT VOLTAGE (V) Iq, QUIESCENT CURRENT (mA) 6 Vin, INPUT VOLTAGE (V) 7 6 5 4 3 2 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 0 50 100 150 200 4.90 −40 −20 250 0 20 40 60 80 100 120 140 160 Iout, OUTPUT CURRENT (mA) TJ, TEMPERATURE (°C) Figure 6. Quiescent Current vs. Output Current Figure 7. Output Voltage Accuracy 6 600 VDO, DROPOUT VOLTAGE (mV) Vout, OUTPUT VOLTAGE (V) 8 5.10 9 TJ = 25°C Rout = 25 W 5 4 3 2 1 0 10 TJ, TEMPERATURE (°C) 10 1 0 12 0 100 120 140 160 TJ = 25°C Rout = 25 W 14 0 1 2 3 4 5 TJ = 125°C 400 TJ = 25°C 300 TJ = −40°C 200 100 0 6 TJ = 150°C 500 0 50 100 150 200 250 Vin, INPUT VOLTAGE (V) Iout, OUTPUT CURRENT (mA) Figure 8. Output Voltage vs. Input Voltage Figure 9. Dropout Voltage vs. Output Current www.onsemi.com 6 NCV4263−2C TYPICAL CHARACTERISTICS 500 400 300 200 100 0 −40 −20 0 20 40 60 80 100 120 140 160 450 TJ = 125°C TJ = −40°C TJ = 150°C 400 350 300 0 5 10 15 20 25 30 35 Figure 11. Output Current Limit vs. Input Voltage 450 400 350 300 Vin = 13.5 V Vout = 0.96 x Vout_nom 250 200 150 −40 −20 0 20 40 60 80 100 120 140 160 Unstable Region 10 1 Stable Region Vin = 13.5 V Cout = 22 mF TJ = 25°C 0.1 0.01 0 50 100 150 200 Iout, OUTPUT CURRENT (mA) Figure 12. Output Current Limit vs. Temperature Figure 13. Output Capacitor ESR Stability Region vs. Output Current 100 90 80 70 Iout = 1 mA 60 50 40 Iout = 100 mA 100 1000 10,000 250 50 Vin = 13.5 V DC + 0.5 Vpp AC Cout = 22 mF, TA = 25°C 110 40 100 TJ, TEMPERATURE (°C) 120 PSRR (dB) TJ = 25°C 500 Figure 10. Dropout Voltage vs. Temperature 500 10 Vout = 0.96 x Vout_nom 550 Vin, INPUT VOLTAGE (V) 550 30 600 TJ, TEMPERATURE (°C) ESR, OUTPUT CAPACITOR ESR (W) ILIM, OUTPUT CURRENT LIMIT (mA) ILIM, OUTPUT CURRENT LIMIT (mA) Iout = 150 mA IEN, ENABLE INPUT CURRENT (mA) VDO, DROPOUT VOLTAGE (mV) 600 100,000 45 40 35 VEN = 13.5 V 30 Vin = 13.5 V Iout = 0 mA 25 20 15 10 VEN = 5 V 5 VEN = 3.3 V 0 −40 −20 0 20 40 60 80 100 120 140 160 FREQUENCY (Hz) TJ, TEMPERATURE (°C) Figure 14. PSRR vs. Frequency Figure 15. Enable Input Current vs. Temperature www.onsemi.com 7 NCV4263−2C Vth(RADJ), RESET ADJUST THRESHOLD (V) 1.44 1.42 1.40 1.38 1.36 1.34 1.32 Vin = 13.5 V Vout = 0.7 x Vout_nom 1.30 1.28 1.26 −40 −20 0 20 40 60 80 100 120 140 160 1.44 1.42 1.40 1.38 1.36 1.34 1.32 Vin = 13.5 V TJ = 25°C 1.30 1.28 1.26 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Vout, OUTPUT VOLTAGE (V) Figure 17. Reset Adjust Threshold vs. Output Voltage 1.8 Upper Threshold 1.6 1.4 1.2 1.0 Vin = 13.5 V 0.8 0.6 Lower Threshold 0.4 0.2 0 −40 −20 0 20 40 60 80 100 120 140 160 ID(charge), (disch), RESET DELAY CHARGE / DISCHARGE CURRENT (mA) TJ, TEMPERATURE (°C) Figure 16. Reset Adjust Threshold vs. Temperature 80 Charge Current 70 60 50 Vin = 13.5 V VD = 1 V 40 30 20 Discharge Current 10 0 −40 −20 0 20 40 60 80 100 120 140 160 TJ, TEMPERATURE (°C) TJ, TEMPERATURE (°C) Figure 18. Delay Timing Switching Thresholds vs. Temperature Figure 19. Reset Delay Charge / Discharge Current vs. Temperature tWTT, WATCHDOG TRIGGER TIME (ms) Vth(D), RESET DELAY THRESHOLDS (V) Vth(RADJ), RESET ADJUST THRESHOLD (V) TYPICAL CHARACTERISTICS 27 Vin = 13.5 V Vout > VRT CD = 100 nF no WDI signal 26 25 24 23 22 21 20 19 18 17 16 −40 −20 0 20 40 60 80 100 120 140 160 TJ, TEMPERATURE (°C) Figure 20. Watchdog Trigger Time vs. Temperature www.onsemi.com 8 NCV4263−2C Vin t Vout V RT 1V t < t RR VD t VthH(D) VthL(D) t V RO 1V V ROL t RD t RD t RR Input Voltage Dip Thermal Shutdown Under Voltage t Output Voltage Spike Overload Figure 21. Reset Operation Timing Diagram VWDI t VD VthH( D) VthL( D) t V RO VROL tWTT t WL tWP Figure 22. Watchdog Operation Timing Diagram www.onsemi.com 9 t NCV4263−2C DEFINITIONS General Current Limit and Short Circuit Current Limit All measurements are performed using short pulse low duty cycle techniques to maintain junction temperature as close as possible to ambient temperature. Current Limit is value of output current by which output voltage drops below 96% of its nominal value. It means that the device is capable to supply minimum 200 mA without sending Reset signal to microprocessor. Short Circuit Current Limit is output current value measured with output of the regulator shorted to ground. Output Voltage The output voltage parameter is defined for specific temperature, input voltage and output current values or specified over Line, Load and Temperature ranges. PSRR Power Supply Rejection Ratio is defined as ratio of output voltage and input voltage ripple. It is measured in decibels (dB). Line Regulation The change in output voltage for a change in input voltage measured for specific output current over operating ambient temperature range. Line Transient Response Typical output voltage overshoot and undershoot response when the input voltage is excited with a given slope. Load Regulation The change in output voltage for a change in output current measured for specific input voltage over operating ambient temperature range. Load Transient Response Typical output voltage overshoot and undershoot response when the output current is excited with a given slope between low−load and high−load conditions. Dropout Voltage The input to output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. It is measured when the output drops 100 mV below its nominal value. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Thermal Protection Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 177°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating. Quiescent and Disable Currents Quiescent Current (Iq) is the difference between the input current (measured through the LDO input pin) and the output load current. If Enable pin is set to LOW the regulator reduces its internal bias and shuts off the output, this term is called the disable current (IDIS). Maximum Package Power Dissipation The power dissipation level is maximum allowed power dissipation for particular package or power dissipation at which the junction temperature reaches its maximum operating value, whichever is lower. www.onsemi.com 10 NCV4263−2C APPLICATIONS INFORMATION range of Output Voltage 70% ≤ Vout < VRT by external resistor output voltage divider, see schematic on Figure 23 and specification of Reset Output. The NCV4263−2C regulator is self−protected with internal thermal shutdown and internal current limit. Typical characteristics are shown in Figures 4 to 22. Input Decoupling (Cin) A ceramic or tantalum 0.1 mF capacitor is recommended and should be connected close to the NCV4263−2C package. Higher capacitance and lower ESR will improve the overall line and load transient response. If extremely fast input voltage transients are expected then appropriate input filter is recommended to use in order to decrease rising and/or falling edges below 50 V/ms for proper operation. The filter can be composed of several capacitors in parallel. Cin 100 nF OFF ON where: CD tRD_des tRD RESET RO I/O D CD Desired Reset Threshold is given by Equation 2. V RT_des + ǒ Ǔ R RADJ1 ) R RADJ2 R RADJ2 V th(RADJ) (eq. 2) where: VRT_des is desired Reset Threshold RRADJ1, RRADJ2 are resistance of resistor divider Vth(RADJ) is Reset Adjust Threshold specified in datasheet Use RRADJ2 ≤ 50 kW to avoid significant Reset Threshold error due to RADJ bias current. The Delay Timing pin is current source. Current from Delay Timing pin charges connected capacitor. The value of this capacitor determines the Reset Delay Time by Equation 1 and Watchdog Trigger Time by Equation 4. 100 nF EN Microprocessor Figure 23. Application Schematic with Adjustable Reset Threshold Delay Timing Ǔ RRADJ2 RRO 5.6 kW 100 nF The Enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. t RD 22 mF NCV4263−2C GND Enable Operation t RD_des RRADJ1 WDI The NCV4263−2C is a stable component and requires a minimum Equivalent Series Resistance (ESR) for the output capacitor. Stability region of ESR versus Output Current is shown in Figure 13. The minimum output decoupling value is 22 mF and can be augmented to fulfill stringent load transient requirements. Larger values improve noise rejection and load transient response. ǒ VDD Cout RADJ Output Decoupling (Cout) CD + Vout Vin Watchdog Operation Watchdog Input monitors a signal from microprocessor. This input is positive edge sensitive. The timing diagram of watchdog function is shown in Figure 22. When watchdog signal is not received during Watchdog Trigger Time, Reset Output goes low for a Watchdog Input Low Time and is periodically generated with period given by Equation 3. Capacitance of Delay capacitor for setting the desired Watchdog Trigger Time is given by Equation 4. (eq. 1) is capacitance of Delay capacitor is desired Reset Delay Time is Reset Delay Time specified in datasheet t WP + t WL ) t WTT Reset Operation CD + A reset signal is provided on the Reset Output pin to provide feedback to the microprocessor of an out of regulation condition. The timing diagram of reset function is shown in Figure 21. This is in the form of a logic signal on Reset Output. Output voltage conditions below the Reset Threshold causes Reset Output to go low. The Reset Output integrity is maintained down to Vout = 1.0 V. The Reset Output circuitry is open collector output with internal 30 kW pull−up resistor. Leave open this output if the Reset function is not needed else an external pull−up resistor (5.6 kW) connect to the output (Vout). Reset Threshold is default set to 93% of nominal Output Voltage (VRADJ = 0 V). Reset Threshold can be varied in where: CD tWTT_des tWTT tWL tWP ǒ t WTT_des t WTT Ǔ 100 nF (eq. 3) (eq. 4) is capacitance of Delay capacitor is desired Watchdog Trigger Time is Watchdog Trigger Time specified in datasheet is Watchdog Input Low Time is Watchdog Input Period Thermal Considerations As power in the NCV4263−2C increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent www.onsemi.com 11 NCV4263−2C 160 P D(MAX) + ƪTJ(MAX) * TAƫ RqJA, THERMAL RESISTANCE (°C/W) upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the NCV4263−2C has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the NCV4263−2C can handle is given by: 150 140 130 110 100 (eq. 5) R qJA Since TJ is not recommended to exceed 150°C, then the NCV4263−2C soldered on 645 mm2, 1 oz copper area, FR4 can dissipate up to 1.3 W in SOIC−14 package and 1.9 W in SOIC−8 EP package, when the ambient temperature (TA) is 25°C. See Figures 24 and 25 for RqJA versus PCB area. The power dissipated by the NCV4263−2C can be calculated from the following equations: V in(MAX) [ I outǓ I out ) I q SOIC−14 − 2 OZ Cu 80 70 60 50 0 100 200 300 400 500 600 700 (mm2) Figure 24. Thermal Resistance vs. PCB Copper Area for SOIC−14 160 (eq. 6) 150 or P D(MAX) ) ǒV out 90 COPPER HEAT SPREADER AREA RqJA, THERMAL RESISTANCE (°C/W) P D [ V inǒI q@I outǓ ) I outǒV in * V outǓ SOIC−14 − 1 OZ Cu 120 140 130 (eq. 7) 120 110 SOIC−8 EP − 1 OZ Cu 100 Hints Vin and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV4263−2C and make traces as short as possible. 90 80 70 60 50 SOIC−8 EP − 2 OZ Cu 0 100 200 300 400 500 600 700 COPPER HEAT SPREADER AREA (mm2) Figure 25. Thermal Resistance vs. PCB Copper Area for SOIC−8 EP ORDERING INFORMATION Output Voltage Marking Package Shipping† NCV4263−2CD250R2G 5.0 V NCV4263−2C50G SOIC−14 (Pb−Free) 2500 / Tape & Reel NCV4263−2CPD50R2G 5.0 V V632C5 SOIC−8 EP (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH 14X XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 EP CASE 751AC ISSUE D 8 1 SCALE 1:1 DATE 02 APR 2019 GENERIC MARKING DIAGRAM* 8 XXXXX AYWWG G 1 DOCUMENT NUMBER: DESCRIPTION: XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 98AON14029D SOIC−8 EP *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present and may be in either location. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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