NCV8403ASTT1G

NCV8403A, NCV8403B Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 www.onsemi.com NCV8403A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 53 mW @ 10 V 15 A Drain Features • • • • • • • • • Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Sense Source MARKING DIAGRAM Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial Current Limit 4 1 2 DRAIN 4 3 SOT−223 CASE 318E STYLE 3 4 1 2 3 AYW xxxxxG G 1 2 3 SOURCE GATE DRAIN YWW xxxxxG DPAK CASE 369C A = Assembly Location Y = Year W, WW = Work Week xxxxx = V8403A or V8403B G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2016 September, 2018 − Rev. 10 1 Publication Order Number: NCV8403/D NCV8403A, NCV8403B MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc Gate−to−Source Voltage VGS "14 Vdc Drain Current Continuous ID Total Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Total Power Dissipation − DPAK Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Internally Limited PD W 1.13 1.56 1.32 2.5 °C/W Thermal Resistance − SOT−223 Version Junction−to−Soldering Point Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Thermal Resistance − DPAK Version Junction−to−Soldering Point Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJS RqJA RqJA 12 110 80 RqJS RqJA RqJA 2.5 95 50 Single Pulse Inductive Load Switching Energy (VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W) EAS 470 Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms) mJ VLD 55 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu. 2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu. + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8403A, NCV8403B MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 42 40 46 45 51 51 Vdc Vdc − − 0.6 2.5 5.0 − − 50 125 mAdc 1.0 − 1.7 5.0 2.2 − Vdc mV/°C − − 53 95 68 123 − − 63 105 76 135 − 0.95 1.1 OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C) (Note 3) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSS mAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3) RDS(on) Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3) RDS(on) Source−Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) VSD mW mW V SWITCHING CHARACTERISTICS (Note 3) Turn−ON Time (10% VIN to 90% ID) tON 44 tOFF 84 tON 15 tOFF 116 −dVDS/dtON 2.43 dVDS/dtOFF 0.83 VIN = 0 V to 5 V, VDD = 25 V ID = 1.0 A, Ext RG = 2.5 W Turn−OFF Time (90% VIN to 10% ID) Turn−ON Time (10% VIN to 90% ID) VIN = 0 V to 10 V, VDD = 25 V, ID = 1.0 A, Ext RG = 2.5 W Turn−OFF Time (90% VIN to 10% ID) Slew−Rate ON (20% VDS to 50% VDS) Vin = 0 to 10 V, VDD = 12 V, RL = 4.7 W Slew−Rate OFF (80% VDS to 50% VDS) ms V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit VGS = 5.0 V, VDS = 10 V VGS = 5.0 V, TJ = 150°C (Note 3) ILIM 10 5.0 15 10 20 15 Adc Current Limit VGS = 10 V, VDS = 10 V VGS = 10 V, TJ = 150°C (Note 3) ILIM 12 8.0 17 13 22 18 Adc VGS = 5.0 Vdc (Note 3) TLIM(off) 150 175 200 °C VGS = 5.0 Vdc DTLIM(on) − 15 − °C VGS = 10 Vdc (Note 3) TLIM(off) 150 165 185 °C VGS = 10 Vdc DTLIM(on) − 15 − °C VGS = 5 V ID = 1.0 A IGON Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis GATE INPUT CHARACTERISTICS (Note 3) Device ON Gate Input Current 400 VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL VGS = 5 V, VDS = 10 V mA 0.1 0.6 VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current mA 50 IGTL mA 0.45 1.5 VGS = 10 V, VDS = 10 V ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3) Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V 3. Not subject to production testing. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. www.onsemi.com 3 NCV8403A, NCV8403B TYPICAL PERFORMANCE CURVES 1000 10 TJstart = 25°C Emax (mJ) ILmax (A) TJstart = 25°C TJstart = 150°C 100 1 10 10 100 100 L (mH) L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 3. Single−Pulse Maximum Switching Energy vs. Load Inductance 100 1000 TJstart = 25°C Emax (mJ) ILmax (A) TJstart = 150°C 10 TJstart = 25°C TJstart = 150°C TJstart = 150°C 100 1 1 1 10 TIME IN CLAMP (ms) TIME IN CLAMP (ms) Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp Figure 5. Single−Pulse Maximum Inductive Switching Energy vs. Time in Clamp 25 20 6V 7V 8V 9V −40°C VDS = 10 V 10 V 20 25°C 15 5V 4V 15 ID (A) ID (A) 10 Ta = 25°C 10 100°C 10 150°C 3V 5 5 VGS = 2.5 V 0 0 0 1 2 3 4 5 1.0 1.5 2.0 2.5 3.0 3.5 VDS (V) VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 4 4.0 NCV8403A, NCV8403B TYPICAL PERFORMANCE CURVES 100 150 ID = 3 A 150°C, VGS = 5 V 90 150°C 125 RDS(on) (mW) RDS(on) (mW) 80 100 100°C 75 25°C 150°C, VGS = 10 V 70 100°C, VGS = 5 V 100°C, VGS = 10 V 60 25°C, VGS = 5 V 50 25°C, VGS = 10 V 40 50 −40°C, VGS = 5 V 30 −40°C −40°C, VGS = 10 V 7 9 8 10 20 25 3 4 5 6 7 8 9 10 1 3 2 5 4 6 VGS (V) ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 25 2.00 −40°C ID = 5 A 20 25°C 1.50 ILIM (A) NORMALIZED RDS(on) 1.75 1.25 VGS = 5 V 15 100°C 1.00 150°C 10 VGS = 10 V 0.75 VDS = 10 V 0.50 −40 −20 5 0 20 60 40 80 100 120 140 5 7 8 9 T (°C) VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 25 10 100 VGS = 0 V VDS = 10 V 10 VGS = 10 V 150°C 20 1 VGS = 5 V IDSS (mA) ILIM (A) 6 15 0.1 100°C 0.01 25°C 0.001 10 −40°C 0.0001 5 −40 −20 0.00001 0 20 40 60 80 100 120 140 10 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 5 40 NCV8403A, NCV8403B TYPICAL PERFORMANCE CURVES 1.0 ID = 1.2 mA VDS = VGS 1.1 0.9 −40°C 0.8 25°C 0.7 100°C 0.6 150°C 1.0 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 0.8 0.7 VGS = 0 V 0.5 0.6 −40 −20 0 20 40 80 60 100 120 140 1 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) td(off) tf tr td(on) 4 5 6 7 8 9 10 7 9 8 10 3.0 VDD = 25 V ID = 5 A RG = 0 W 2.5 −dVDS/dt(on) 2.0 1.5 1.0 dVDS/dt(off) 0.5 0 3 4 5 6 7 8 9 10 VGS (V) VGS (V) Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage 100 td(off), VGS = 10 V 75 VDD = 25 V ID = 5 A td(off), VGS = 5 V 50 tf, VGS = 5 V tf, VGS = 10 V tr, VGS = 5 V td(on), VGS = 5 V td(on), VGS = 10 V tr, VGS = 10 V 0 500 1000 1500 2000 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 100 50 TIME (ms) 6 Figure 15. Source−Drain Diode Forward Characteristics 150 0 5 Figure 14. Normalized Threshold Voltage vs. Temperature 200 25 4 IS (A) VDD = 25 V ID = 5 A RG = 0 W 3 3 T (°C) 250 0 2 2.50 −dVDS/dt(on), VGS = 10 V 2.25 2.00 VDD = 25 V ID = 5 A 1.75 1.50 1.25 dVDS/dt(off), VGS = 5 V 1.00 dVDS/dt(off), VGS = 10 V 0.75 −dVDS/dt(on), VGS = 5 V 0.50 0 500 1000 1500 2000 RG (W) RG (W) Figure 18. Resistive Load Switching Time vs. Gate Resistance Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 6 NCV8403A, NCV8403B 150 150 125 125 RqJA (°C/W) RqJA (°C/W) TYPICAL PERFORMANCE CURVES 100 PCB Cu thickness, 1.0 oz 75 100 75 PCB Cu thickness, 2.0 oz PCB Cu thickness, 1.0 oz 50 50 25 25 PCB Cu thickness, 2.0 oz 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 COPPER HEAT SPREADER AREA (mm2) COPPER HEAT SPREADER AREA (mm2) Figure 20. RqJA vs. Copper Area − SOT−223 Figure 21. RqJA vs. Copper Area − DPAK 800 1000 R(t) °C/W 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 PULSE TIME (sec) Figure 22. Transient Thermal Resistance − SOT−223 Version 100 50% Duty Cycle R(t) °C/W 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 23. Transient Thermal Resistance − DPAK Version www.onsemi.com 7 NCV8403A, NCV8403B TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 24. Resistive Load Switching Test Circuit 90% 10% VIN td(ON) tr td(OFF) tf 90% 10% IDS Figure 25. Resistive Load Switching Waveforms www.onsemi.com 8 NCV8403A, NCV8403B TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 26. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 27. Inductive Load Switching Waveforms www.onsemi.com 9 NCV8403A, NCV8403B ORDERING INFORMATION Package Shipping† NCV8403ASTT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8403ASTT3G SOT−223 (Pb−Free) 4000 / Tape & Reel NCV8403ADTRKG DPAK (Pb−Free) 2500 / Tape & Reel NCV8403BDTRKG DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 NCV8403A, NCV8403B PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE P q q www.onsemi.com 11 NCV8403A, NCV8403B PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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