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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 7.3 mW, 101 A
NTB7D3N15MC
Features
•
•
•
•
•
•
www.onsemi.com
Shielded Gate MOSFET Technology
Max RDS(on) = 7.3 mW at VGS = 10 V, ID = 62 A
50% Lower Qrr than other MOSFET Suppliers
Lowers Switching Noise/EMI
100% UIL Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(ON) MAX
ID MAX
150 V
7.3 mW @ 10 V
101 A
D
Typical Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
150
V
Gate−to−Source Voltage
VGS
±20
V
ID
101
A
Parameter
Continuous Drain
Current RqJC
(Note 2)
Power Dissipation
RqJC (Note 2)
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
Steady
State
Steady
State
MARKING
DIAGRAM
4
Drain
TC = 25°C
PD
166
W
ID
15.2
A
3.75
W
IDM
488
A
TJ, Tstg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy (IL = 20 Apk, L = 3 mH)
EAS
600
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TC = 25°C, tp = 100 ms
Operating Junction and Storage Temperature
Range
4
1
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
NTB7D3
N15MC
AYWWZZ
D2PAK
TO−263
CASE 418AJ
3
TA = 25°C
PD
Pulsed Drain Current
N−CHANNEL MOSFET
1
Gate
2
Drain
3
Source
NTB7D3N15MC = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
NTB7D3N15MC
Package
Shipping†
D2PAK
(Pb−Free)
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
December, 2020 − Rev. 1
1
Publication Order Number:
NTB7D3N15MC/D
NTB7D3N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 2)
Parameter
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Notes 1, 2)
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
150
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 120 V
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
V
71
TJ = 25°C
mV/°C
1.0
±100
mA
nA
ON CHARACTERISTICS
VGS(TH)
VGS = VDS, ID = 342 mA
VGS(TH)/TJ
ID = 342 mA, ref to 25°C
−7.3
RDS(on)
VGS = 10 V, ID = 62 A
6.0
7.3
VGS = 8 V, ID = 31 A
6.5
8.4
VDS = 10 V, ID = 62 A
119
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
gFS
2.5
4.5
V
mV/°C
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
4250
Reverse Transfer Capacitance
CRSS
15
Gate−Resistance
RG
0.8
Total Gate Charge
QG(TOT)
53
Threshold Gate Charge
QG(TH)
14
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
8.5
Plateau Voltage
VGP
5.8
V
Output Charge
QOSS
133
nC
VGS = 0 V, f = 1 MHz, VDS = 75 V
VGS = 10 V, VDS = 75 V; ID = 62 A
VDD = 75 V, VGS = 0 V
1250
pF
1.6
W
nC
23
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
27
VGS = 10 V, VDD = 75 V,
ID = 62 A, RG = 4.7 W
tf
8.5
ns
33
5.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = 62 A
TJ = 25°C
VGS = 0 V, VDD = 75 V
dIS/dt = 300 A/ms, IS = 62 A
VGS = 0 V, VDD = 75 V
dIS/dt = 1000 A/ms, IS = 62 A
0.93
1.2
V
55
ns
247
nC
50
ns
720
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB7D3N15MC
TYPICAL CHARACTERISTICS
10 V
6
7.0 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
240
ID, DRAIN CURRENT (A)
8.0 V
180
6.0 V
120
VGS = 5.5 V
60
0
0
4
2
8
6
10
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
4
3
8V
7V
2
1
0
10 V
0
60
180
120
240
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
40
2.2
RDS(on), ON−RESISTANCE (mW)
ID = 62 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
240
0
25
50
75
30
20
TJ = 150°C
10
TJ = 25°C
4
6
5
8
7
9
10
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
VDS = 10 V
180
120
TJ = 25°C
60
TJ = 175°C
2
ID = 62 A
0
100 125 150 175
IS, REVERSE DRAIN CURRENT (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
5
ID, DRAIN CURRENT (A)
0.6
−75 −50 −25
ID, DRAIN CURRENT (A)
6V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2.4
0
VGS = 5.5 V
3
4
TJ = −55°C
5
6
7
300
10
1
0.1 TJ = 175°C
0.01
0.001
8
VGS = 0 V
100
TJ = −55°C
TJ = 25°C
0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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3
1.4
NTB7D3N15MC
10
10K
VDD = 50 V
ID = 62 A
VDD = 75 V
8
VDD = 100 V
CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
6
4
2
0
15
0
45
30
10
1
0.1
100 150
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
100K
PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
CRSS
Qg, GATE CHARGE (nC)
90
VGS = 8 V
60
30
RqJC = 0.9°C/W
50
25
75
100
125
10K
1K
100
10
0.00001
175
150
0.0001
0.001
0.01
0.1
TC, CASE TEMPERATURE (°C)
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
1
1000
TJ(initial) = 25°C
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
100
1
60
VGS = 10 V
TJ(initial) = 100°C
TJ(initial) = 150°C
10
1
COSS
1K
f = 1 MHz
VGS = 0 V
120
0
CISS
0.001
0.01
0.1
1
10
100
1000
10 ms
100
100 ms
10
TC = 25°C
Single Pulse
RqJC = 0.9°C/W
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
0.1
1
1 ms
10 ms
100 ms/DC
10
100 200
tAV, TIME IN AVALANCHE (mS)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
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4
NTB7D3N15MC
TYPICAL CHARACTERISTICS
ZqJC, EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
10
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
P DM
0.01
0.01 Single Pulse
0.001
t1
t2
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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5
Notes:
RqJC = 0.9°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2
0.1
1
NTB7D3N15MC
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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