NTR5198NLT1G

NTR5198NL Power MOSFET 60 V, 155 mW, Single N−Channel Logic Level, SOT−23 Features • Small Footprint Industry Standard Surface Mount SOT−23 Package • Low RDS(on) for Low Conduction Losses and Improved Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP 155 mW @ 10 V 60 V Symbol Value Unit Drain−to−Source Voltage VDSS 60 V N−Channel Gate−to−Source Voltage VGS ±20 V D ID 2.2 A Continuous Drain Current RYJ−mb (Notes 1, 2, 3, and 4) Steady State Power Dissipation RYJ−mb (Notes 1 and 3) Continuous Drain Current RqJA (Note 1, 2, 3, and 4) TA = 25°C TA = 100°C TA = 25°C 1.6 PD TA = 100°C Steady State Power Dissipation RqJA (Notes 1 and 3) TA = 25°C 1.5 W G 0.6 ID TA = 100°C TA = 25°C A 1.7 S 1.2 PD TA = 100°C 0.9 W 3 0.4 27 A 1 TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 1.9 A SOT−23 CASE 318 STYLE 21 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. MARKING DIAGRAM/ PIN ASSIGNMENT Drain 3 IDM Pulsed Drain Current 2.2 A 205 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX 2 AA6 M G AA6 M G G 1 Gate 2 Source = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NTR5198NLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NTR5198NLT3G SOT−23 (Pb−Free) 10000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 October, 2016 − Rev. 2 1 Publication Order Number: NTR5198NL/D NTR5198NL THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Lead #3 − Drain (Notes 2 and 3) Parameter RYJ−mb 86 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 139 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 250 mA Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 60 V V 70 TJ = 25°C mV/°C 1.0 TJ = 125°C mA 10 VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ Reference to 25°C, ID = 250 mA −6.5 RDS(on) VGS = 10 V, ID = 1 A 107 155 VGS = 4.5 V, ID = 1 A 142 205 gFS VDS = 5.0 V, ID = 1 A 3 S 182 pF Forward Transconductance 1.5 2.5 V mV/°C mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 25 V VDS = 48 V, ID = 1 A 25 16 VGS = 4.5 V 2.8 VGS = 10 V 5.1 nC Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD Plateau Voltage VGP 3.1 V Gate Resistance RG 8 W td(on) 5 ns tr 7 VDS = 48 V, ID = 1 A VGS = 10 V 0.8 1.5 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VDS = 30 V, VGS = 10 V, ID = 1 A, RG = 10 W tf 13 2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Stored Charge VGS = 0 V, IS = 1 A TJ = 25°C 0.8 TJ = 125°C 0.6 12 IS = 1 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms QRR 1.2 V ns 9 3 6 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR5198NL VGS = 10 V VGS = 6.0 V VGS = 3.0 V ID, DRAIN CURRENT (A) VGS = 5.0 V VGS = 4.5 V VGS = 4.0 V VGS = 3.8 V VGS = 3.6 V VGS = 3.4 V VGS = 3.2 V 0 1 2 3 4 5 TJ = 25°C TJ = 150°C TJ = −55°C 3 5 4 Figure 2. Transfer Characteristics ID = 1 A TJ = 25°C 0.40 0.35 0.30 0.25 0.20 0.15 0.10 5 4 6 7 8 9 10 VGS, GATE VOLTAGE (V) 0.50 TJ = 25°C 0.45 0.35 0.30 0.25 VGS = 10 V 0.20 0.15 0.10 0.05 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = 1 A VGS = 10 V −25 VGS = 4.5 V 0.40 Figure 3. On−Resistance vs. Gate−to−Source Voltage 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 2 1 Figure 1. On−Region Characteristics 0.45 3 VDS = 5 V VGS, GATE−TO−SOURCE VOLTAGE (V) 0.50 0.05 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 150 BVDSS, NORMALIZED BREAKDOWN VOLTAGE RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.150 1.125 ID = 250 mA 1.100 1.075 1.050 1.025 1.000 0.975 0.950 0.925 0.900 −50 Figure 5. On−Resistance Variation with Temperature −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Breakdown Voltage Variation with Temperature www.onsemi.com 3 150 NTR5198NL 1.20 1.15 10,000 ID = 250 mA TJ = 150°C IDSS, LEAKAGE (nA) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0 −25 25 50 75 100 TJ = 85°C 10 100 125 225 20 12 11 10 9 TJ = 25°C f = 1 MHz VGS = 0 V 125 100 75 COSS 25 CRSS 0 0 5 10 15 25 30 35 40 45 50 55 60 20 25 30 35 40 45 50 55 60 60 55 50 45 QT 8 7 VDS 40 35 VGS 30 6 5 4 3 2 1 0 QGS 0 QGD VDS = 48 V ID = 1 A TJ = 25°C 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 9. Capacitance Variation Figure 10. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 10 10 VDD = 30 V ID = 1 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) tr td(on) tf 1 1 10 15 Figure 8. Drain−to−Source Leakage Current vs. Voltage 150 0.1 5 Figure 7. Threshold Voltage Variation with Temperature 175 50 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) CISS 200 1 150 TJ, JUNCTION TEMPERATURE (°C) 250 t, TIME (ns) TJ = 125°C 10 TJ = 125°C TJ = 100°C TJ = 85°C 1 0.1 100 TJ = 150°C TJ = 25°C 0.4 0.5 0.6 0.7 0.8 TJ = −55°C 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current www.onsemi.com 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.65 0.60 −50 275 C, CAPACITANCE (pF) 1000 0.70 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS(th), NORMALIZED THRESHOLD VOLTAGE TYPICAL CHARACTERISTICS NTR5198NL TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 10 10 mS 100 mS 1 1 mS 10 mS 0.1 0.01 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) VGS ≤ 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area 1000 100 50% Duty Cycle 20% 10% RqJA Steady State = 139°C/W 10 5% 2% 1% 1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, TIME (sec) Figure 14. Thermal Impedance (Junction−to−Ambient) www.onsemi.com 5 10 100 1000 NTR5198NL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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