PN2222ATF

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TO-92 EBC Ordering Information Part Number Top Mark Package Packing Method PN2222ABU PN2222A TO-92 3L Bulk PN2222ATA PN2222A TO-92 3L Ammo PN2222ATF PN2222A TO-92 3L Tape and Reel PN2222ATFR PN2222A TO-92 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit 40 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V Collector Current 1.0 A -55 to 150 °C IC TSTG Operating and Storage Junction Temperature Range Note: 1. These rating are based on a maximum junction temperature of 150 °C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation. © 2004 Fairchild Semiconductor Corporation PN2222A Rev. 1.1.0 www.fairchildsemi.com PN2222A — NPN General-Purpose Amplifier July 2014 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. Unit Total Device Dissipation 625 mW Derate Above 25°C 5.0 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W PD Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 2004 Fairchild Semiconductor Corporation PN2222A Rev. 1.1.0 www.fairchildsemi.com 2 PN2222A — NPN General-Purpose Amplifier Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage(4) IC = 10 mA, IB = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V BV(BR)EBO 6.0 Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V ICBO Collector Cut-Off Current IEBO IBL V 10 VCB = 60 V, IE = 0 0.01 nA μA VCB = 60 V, IE = 0, TA = 125°C 10 Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA On Characteristics hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 35 IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 IC = 10 mA, VCE = 10 V, TA = -55°C 35 IC = 150 mA, VCE = 10 V(4) 100 IC = 150 mA, VCE = 1 V(4) IC = 500 mA, VCE = 10 V(4) VCE(sat) Collector-Emitter Saturation Voltage(4) VBE(sat) Base-Emitter Saturation Voltage(4) 300 50 40 IC = 150 mA, IB = 15 mA 0.3 IC = 500 mA, IB = 50 mA 1.0 IC = 150 mA, IB = 15 mA 0.6 IC = 500 mA, IB = 50 mA 1.2 2.0 V V Small Signal Characteristics Current Gain Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF rb’Cc Collector Base Time Constant IC = 20 mA, VCB = 20 V, f = 31.8 MHz 150 pS Noise Figure IC = 100 μA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB Real Part of Common-Emitter High Frequency Input Impedance IC = 20 mA, VCE = 20 V, f = 300 MHz 60 Ω VCC = 30 V, VEB(off) = 0.5 V, IC = 150 mA, IB1 = 15 mA 10 ns 25 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 225 ns 60 ns fT NF Re(hie) 300 MHz Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2004 Fairchild Semiconductor Corporation PN2222A Rev. 1.1.0 www.fairchildsemi.com 3 PN2222A — NPN General-Purpose Amplifier Electrical Characteristics PN2222A — NPN General-Purpose Amplifier Physical Dimensions TO-92 (Bulk) D Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2004 Fairchild Semiconductor Corporation PN2222A Rev. 1.1.0 www.fairchildsemi.com 4 PN2222A — NPN General-Purpose Amplifier Physical Dimensions (Continued) TO-92 (Ammo, Tape and Reel) Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2004 Fairchild Semiconductor Corporation PN2222A Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 © Fairchild Semiconductor Corporation www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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