TIP31CG

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG(PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • Compact TO−220 Package • These Devices are Pb−Free and are RoHS Compliant* 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40−60−80−100 VOLTS, 40 WATTS PNP MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG Value Unit VCEO 1 BASE VCB Emitter−Base Voltage VEB 5.0 Vdc IC 3.0 Adc Collector Current − Peak Vdc 40 60 80 100 ICM 5.0 Adc IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Unclamped Inductive Load Energy (Note 1) 40 0.32 W W/°C 2.0 0.016 W W/°C E 32 mJ TJ, Tstg – 65 to + 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. September, 2015 − Rev. 16 3 EMITTER 3 EMITTER TO−220 CASE 221A STYLE 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W © Semiconductor Components Industries, LLC, 2015 1 BASE 4 Base Current Operating and Storage Junction Temperature Range COLLECTOR 2,4 Vdc 40 60 80 100 Collector−Base Voltage TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG Collector Current − Continuous NPN COLLECTOR 2,4 1 2 3 MARKING DIAGRAM TIP3xxG AYWW TIP3xx xx A Y WW G = Device Code = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C, = Assembly Location = Year = Work Week Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: TIP31A/D TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31G, TIP32G, TIP31AG, TIP32AG (VCE = 60 Vdc, IB = 0) TIP31BG, TIP31CG, TIP32BG, TIP32CG ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP31G, TIP32G (VCE = 60 Vdc, VEB = 0) TIP31AG, TIP32AG (VCE = 80 Vdc, VEB = 0) TIP31BG, TIP32BG (VCE = 100 Vdc, VEB = 0) TIP31CG, TIP32CG ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 40 60 80 100 − − − − mAdc − 0.3 − 0.3 mAdc − 200 − 200 − 200 − 200 − 1.0 25 10 − 50 − 1.2 − 1.8 3.0 − 20 − mAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) 40 4.0 TC 30 3.0 20 2.0 TA 10 1.0 0 0 0 40 20 60 80 100 140 120 160 T, TEMPERATURE (°C) Figure 1. Power Derating TURN−ON PULSE APPROX +11 V VCC RC SCOPE Vin Vin 0 RB VEB(off) t1 Cjd