AN7523N

Prepared Ref No. Product Specifications Checked AN7523N Approved Total Page 9 Page No. 1 Structure Silicon Monolithic Bipolar IC Appearance SIL-9 Pin Plastic Package (Power Type with Fin) Application Low Frequency Amplifier Function BTL 4.0W x 1ch Power Amplifier with Standby Function and Volume Function A A-1 Absolute Maximum Ratings No. Item Symbol Ratings Unit Note 1 Storage Temperature Tstg -55 ~ +150 °C 1 2 Operating Ambient Temperature Topr -25 ~ +70 °C 1 3 Operating Ambient Pressure Popr 4 Operating Constant Acceleration Gopr 5 Operating Shock Sopr 1.013x105±0.61x105 (1.0±0.6) 9,810 (1000) 4,900 (500) Pa (atm) m/s2 (G) m/s2 (G) 6 Supply Voltage Vcc 14.4 V 7 Supply Current Icc 1.0 A 8 Power Dissipation PD 1.22 W Operating Supply Voltage Range Vcc 2 Ta=70°C 3.5V ~ 13.5V Note 1) The temperature of all items shall be Ta=25°C except storage temperature and operating ambient temperature. 2) At no signal input. Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Ref No. Product Specifications Checked AN7523N Approved Total Page 9 Page No. 2 (Unless otherwise specified, the ambient temperature is 25°C±2˚C, Vcc=8.0V, frequency=1kHz and RL=8Ω.) B Electrical Characteristics Test Symbol Cir- Conditions cuit No Item B-1 Limits min typ max Unit 1 Quiescent Circuit Current ICQ 1 Vin=0V, Vol=0V - 20 60 mA 2 Standby Current ISTB 1 Vin=0V, Vol=0V - 1 10 µA Output Noise 3 Voltage VNO 1 Rg=10kΩ, Vol=0V - 0.10 0.4 mVrms 4 Voltage Gain GV 1 Po=0.5W, Vol=1.25V 31 33 35 dB 5 Total Harmonic Distortion THD 1 Po=0.5W, Vol=1.25V - 0.10 0.5 % 6 Maximum Power Output 1 PO 1 1 THD=10%, Vol=1.25V 2.4 3.0 - W 7 Maximum Power Output 2 PO 2 1 Vcc=9V THD=10%, Vol=1.25V 3.2 4.0 - W 8 Ripple Rejection Ratio RR 1 Rg=10kΩ, Vol=0V Vr=0.5Vrms, fr=120Hz 30 50 - dB 9 Output Offset Voltage Voff 1 Rg=10kΩ, Vol=0V -250 0 250 mV 10 Volume Attenuation Ratio Att 1 Po=0.5W, Vol=0V 70 85 - dB 11 Middle Voltage Gain G Vm 1 Po=0.5W, Vol=0.6V 20.5 23.5 26.5 Note 1 1 1 dB Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT). Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Product Specifications Checked (Reference Data for Design) Total Page 9 Approved AN7523N Page No. 3 Test Symbol Cir- Conditions cuit pin 1 Standby current ISTB2 1 Vin=0V, VSTB=3V 2 Volume pin current IVOL 1 Zi 1 3 Input Impedance B-2 (Unless otherwise specified, the ambient temperature is 25°C±2°C, Vcc=8.0V, frequency=1kHz and RL=8Ω.) B Electrical Characteristics No Item Ref No. Limits min typ max Unit - - 25 µA Vin=0V, Vol=0V -12 - - µA Vin=±0.3VDC 24 30 36 kΩ Note Note) The above characteristics are reference values determined for IC design, but not guaranteed values for shipping inspection. If problems were to occur, counter measures will be sincerely discussed. Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Ref No. Product Specifications Checked AN7523N Approved C-1 Total Page 9 Page No. 4 (Description of test circuit and test method) Test Circuit 1 AN7523N 1 2 3 6 5 4 7 8 9 + + 470µ 10µ + 270k 1.0µ 10k OUT1 8Ω 68k Vcc 5V 1.25V Vin 0V 0V Stand-by Volume Note) If the standby pin is open or 0V, the IC is on standby state. The IC is in the state of volume minimum if the Volume pin is ground. The IC is in the state of volume maximum if the Volume pin is open. Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Ref No. Product Specifications Checked AN7523N Approved D-1 Total Page 9 Page No. 5 Circuit Function Block Diagram _ + + _ 1 2 Vcc 3 4 Output GND 5 6 7 8 9 Input GND Pin Descriptions Pin No. Description 1 Vcc 2 Ch Output (+) 3 GND (Output) 4 Ch Output (-) 5 Standby 6 Ch Input 7 GND (Input) 8 N.C 9 Volume Note) Do not apply voltage or current to NC pin from outside. Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Product Specifications Checked AN7523N Approved Package Name Ref No. E Total Page 9 Page No. 6 F - 9S Unit : mm 6.3±0.3 7.1±0.25 5.8±0.25 3.75±0.25 8 7 5 2.54 15.0 0.15 MAX 21.6±0.3 6 18.5±0.25 19.92±0.3 φ3.3±0.1 9 0.5±0.1 1.5±0.25 1.2±0.25 φ2.65±0.1 8.4±0.25 4 3 2 1.7±0.25 5.6±0.25 0.44 +0.1 -0.05 1.7±0.25 1 Name of item Date Code Company insignia Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Product Specifications Checked AN7523N Approved Ref No. F-1 Total Page 9 Page No. 7 (Structure Description) Chip surface passivation SiN, PSG, Others ( ) 1 Lead frame material Fe group, Cu group, Others ( ) 2 , 6 Inner lead surface process Ag plating, Au plating, Others ( ) 2 Outer lead surface process Solder plating, Solder dip, Others ( ) 6 Chip mounting method Ag paste, Au-Si alloy, Solder, Others ( ) 3 Wire bonding method Thermalsonic bonding, Others ( ) 4 Wire material, Diameter Au, Others ( ) 4 Mold material Epoxy, Others ( ) 5 Molding method Transfer mold, Others ( ) 5 Diameter 30 µm Multiplunger mold, Package 9-SIP(F) 1 2 5 6 3 4 Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Product Specifications Ref No. G Checked (Technical Data) Total Page 9 Approved AN7523N Page No. 8 ( ) Rth(j-c) = 12.0°C/W Rth(j-a) = 66.5°C/W F-9S Package Power Dissipation PD - Ta 5000 5°C/W heat sink 4706 4500 4000 10°C/W heat sink Power Dissipation, PD (mW) 3636 3500 3000 20°C/W heat sink 2500 Without heat sink PD=1880mW(25°C) 2000 1500 Without heat sink 1203 1000 500 0 0 25 50 70 75 100 125 150 Ambient Temperature, Ta (°C) Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation Prepared Product Specifications Checked AN7523N Approved Ref No. H Total Page 9 Page No. 9 (Precautions for use) 1) Make sure that the IC is free of any pin short-circuiting, ground short, and load shortcircuiting. 2) Ground the radiation fin so that there will be no difference in electric potential between the radiation fin and ground. 3) The thermal protection circuit operates at a Tj of approximately 150°C. The thermal protection circuit is reset automatically when the temperature drops. 4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high or the IC operates high output power. 5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the previous stage. 6) The electric surge voltage for this IC low, therefore be extra careful when using the following pin (at 200pF): Pin 6=+180V, Pin 9=+100V Eff. Date Eff. Date Eff. Date Eff. Date 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Matsushita Electronics Corporation