DMC502010R

DMC50201 Silicon NPN epitaxial planar type Unit: mm For general amplification DMC20201 in SMini5 type package  Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: A6  Basic Part Number Dual DSC2001 (Common base)  Packaging DMC502010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C 4: Collector (Tr2) 5: Collector (Tr1) 1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2) Panasonic JEITA Code SMini5-F3-B SC-113CB SOT-353 (C1) 5 (C2) 4 Tr1 1 (E1) Tr2 2 (B) 3 (E2)  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 210 460  hFE (Small/Large) VCE = 10 V, IC = 2 mA 0.50 hFE ratio *1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob 0.99  IC = 100 mA, IB = 10 mA 0.13 0.3 V VCE = 10 V, IC = 2 mA 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements Publication date: December 2013 Ver. CED 1 DMC50201 DMC50201_IC-VCE DMC50201_PT-Ta PT  Ta DMC50201_hFE-IC IC  VCE 250 hFE  IC 120 600 VCE = 10 V 150 100 50 IB = 250 µA 200 µA 60 150 µA 40 100 µA 20 0 40 80 120 160 0 200 Ambient temperature Ta (°C) 50 µA 0 2 4 10 VCE = 10 V Collector current IC (mA) 1 0.1 Ta = 85°C 25°C Ta = 85°C 80 10 100 −40°C 60 40 0 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) Collector current IC (mA) 1 10 100 Collector current IC (mA) Cob  VCB 25°C 1 0 0.1 DMC50201_Cob-VCB 20 −40°C 0.01 0.1 100 12 120 100 −40°C 200 IC  VBE IC / IB = 10 25°C 300 DMC50201_IC-VBE VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 8 Ta = 85°C 400 Collector-emitter voltage VCE (V) DMC50201_VCEsat-IC 10 6 500 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 80 Forward current transfer ratio hFE 100 200 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C 4.0 3.0 2.0 1.0 0 1 10 100 Collector-base voltage VCB (V) DMC50201_fT-IC fT  IC Transition frequency fT (MHz) 250 VCE = 10 V Ta = 25°C 200 150 100 50 0 0.1 1 10 100 Collector current IC (mA) Ver. CED 2 DMC50201 SMini5-F3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. 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