DME50C010R

DME50C01 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For general amplification DME20C01 in SMini5 type package  Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: A4  Basic Part Number DSA2001 + DSC2001 (Base-emitterr connection)  Packaging DME50C010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –60 V Collector-emitter voltage (Base open) VCEO –50 V Emitter-base voltage (Collector open) VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +150 °C Publication date: January 2014 Ver. CED 1: Emitter (Tr1) 2: Base (Tr1) Emitter (Tr2) Panasonic JEITA Code (C1) 5 Tr1 3: Base (Tr2) 4: Collector (Tr2) 5: Collector (Tr1) SMini5-F3-B SC-113CB SOT-353 (C2) 4 Tr2 1 2 3 (E1) (B1,E2) (B2) 1 DME50C01  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –60 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0 –7 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10 V, IC = –2 mA 460  – 0.5 V Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 210 IC = –100 mA, IB = –10 mA – 0.2 VCE = –10 V, IC = –2 mA 150 MHz 2 pF VCB = –10 V, IE = 0, f = 1 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 460  0.3 V Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 210 IC = 100 mA, IB = 10 mA 0.13 VCE = 10 V, IC = 2 mA 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart DME50C01_PT-Ta PT  Ta Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Ver. CED 2 DME50C01 Characteristics charts of Tr1 DME50C01(Tr1)_IC-VCE DME50C01(Tr1)_hFE-IC −120 −80 −400 µA −300 µA −60 −200 µA −40 −100 µA −20 −2 −4 −6 −8 −10 500 400 Ta = 85°C 300 25°C 200 100 0 − 0.1 −12 Collector-emitter voltage VCE (V) Collector current IC (mA) −80 −40°C −60 −40 −20 − 0.4 − 0.8 −1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 25°C Ta = 85°C 0 −10 2.0 1.0 0 −1 −10 150 µA 100 µA 50 µA 4 6 8 10 12 Collector-emitter voltage VCE (V) Forward current transfer ratio hFE Collector current IC (mA) 200 µA 2 50 Ta = 85°C 25°C 300 −40°C 200 100 0 0.1 1 10 Collector current IC (mA) Ver. CED −10 −100 VCE(sat)  IC 500 400 −1 Collector current IC (mA) DME50C01(Tr2)_VCEsat-IC VCE = 10 V IB = 250 µA 0 100 0 − 0.1 −100 600 20 150 hFE  IC 100 −100 VCE = −10 V Ta = 25°C 200 DME50C01(Tr2)_hFE-IC Ta = 25°C −10 250 Collector-base voltage VCB (V) 120 40 −1 DME50C01(Tr1)_fT-IC 3.0 IC  VCE 60 − 0.01 − 0.1 Collector current IC (mA) IE = 0 f = 1 MHz Ta = 25°C Characteristics charts of Tr2 DME50C01(Tr2)_IC-VCE 0 −100 −40°C fT  IC 4.0 Base-emitter voltage VBE (V) 80 Ta = 85°C 25°C Cob  VCB −120 0 −1 DME50C01(Tr1)_Cob-VCB IC  VBE −100 IC / IB = 10 Collector current IC (mA) DME50C01(Tr1)_IC-VBE VCE = −10 V −1 −10 − 0.1 −40°C Transition frequency fT (MHz) 0 VCE = −10 V 100 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −500 µA Forward current transfer ratio hFE IB = −600 µA −100 0 VCE(sat)  IC 600 Ta = 25°C DME50C01(Tr1)_VCEsat-IC hFE  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 10 IC / IB = 10 1 0.1 0.01 0.1 Ta = 85°C −40°C 25°C 1 10 100 Collector current IC (mA) 3 DME50C01 DME50C01(Tr2)_IC-VBE Collector current IC (mA) 100 Ta = 85°C 80 −40°C 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) 1.2 fT  IC 250 VCE = 10 V Ta = 25°C 4.0 Transition frequency fT (MHz) 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) Cob  VCB 120 VCE = 10 V DME50C01(Tr2)_fT-IC DME50C01(Tr2)_Cob-VCB IC  VBE 3.0 2.0 1.0 0 1 10 100 Collector-base voltage VCB (V) Ver. CED 200 150 100 50 0 0.1 1 10 100 Collector current IC (mA) 4 DME50C01 SMini5-F3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. CED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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