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MA3X70400L

MA3X70400L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT23

  • 描述:

    DIODE SCHOTTKY 15V 30MA MINI3

  • 数据手册
  • 价格&库存
MA3X70400L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.9±0.1 (0.65) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic • Small reverse current IR 2.8+0.2 –0.3 ■ Features 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d 3 2.90+0.20 –0.05 Symbol MA3X704 VR MA3X704A Maximum peak MA3X704 reverse voltage MA3X704A Peak forward current Rating Unit 15 V VRM 15 V EIAJ: SC-59 30 Forward current IF Junction temperature Tj Storage temperature Tstg 150 mA Marking Symbol • MA3X704: M1K • MA3X704A: M1L Internal Connection 30 mA 125 °C −55 to +125 °C ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol ce /D isc on tin Parameter VF1 VF2 Reverse current MA3X704 IR an MA3X704A Ct en Terminal capacitance 1: Anode 2: N.C. 3: Cathode Mini3-G1 Package 30 IFM Forward voltage 1.1+0.3 –0.1 Parameter Reverse voltage 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.2 –0.1 10˚ int Reverse recovery time * Ma trr η Detection efficiency 3 1 Conditions Min 2 Typ IF = 1 mA Max Unit 0.4 V IF = 30 mA 1.0 VR = 15 V 200 VR = 30 V nA 300 VR = 1 V, f = 1 MHz 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse Output Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2004 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Note) The part numbers in the parenthesis show conventional part number. SKH00073CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3X704, MA3X704A Common characteristics charts IF  VF VF  T a 103 1.0 75°C 25°C Ta = 125°C 0.8 Forward voltage VF (V) Forward current IF (mA) 102 −20°C IF = 30 mA 0.6 10 mA M Di ain sc te on na tin nc ue e/ d 10 1 10−1 1 mA 0.2 0 0.2 0.4 0.6 0.8 1.0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10−2 0.4 0 −40 1.2 Forward voltage VF (V) 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of MA3X704 IR  VR IR  Ta 102 103 Ct  VR 3 f = 1 MHz Ta = 25°C Reverse current IR (µA) Ta = 125°C 10 75°C 1 25°C 0 5 10 15 20 25 10−2 −40 30 Reverse voltage VR (V) an Characteristics charts of MA3X704A 0 0 40 80 120 int 75°C 1 25°C Reverse current IR (µA) Ta = 125°C 10 160 200 5 10 15 20 25 Reverse voltage VR (V) 2 5 30 1 10−1 80 120 160 Ambient temperature Ta (°C) SKH00073CED 25 30 f = 1 MHz Ta = 25°C 2 1 0 40 20 3 VR = 30 V 15 V 0 15 Ct  VR 10 10−2 −40 10 Reverse voltage VR (V) 10−1 0 0 Ambient temperature Ta (°C) 102 Ma 102 10−2 1 IR  Ta en IR  VR 103 Reverse current IR (µA) 10−1 ce /D isc on tin 10−2 1 2 ue 10−1 10 Terminal capacitance Ct (pF) Reverse current IR (µA) 102 Terminal capacitance Ct (pF) VR = 15 V 7.5 V 200 0 5 10 15 20 25 Reverse voltage VR (V) 30 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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