MA3X71700L

This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.9±0.1 (0.65) • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short reverse recovery time trr 2.8+0.2 –0.3 ■ Features 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d 3 2.90+0.20 –0.05 Parameter Symbol Reverse voltage VR Maximum peak reverse voltage VRM Peak forward current IFM Forward current IF Junction temperature Tj Storage temperature Tstg Rating Unit 30 V 30 V 150 mA 30 mA 125 °C −55 to +125 °C ue VF1 VF2 Reverse current IR an Terminal capacitance int en Reverse recovery time * Ma Detection efficiency Ct trr η 1.1+0.3 –0.1 Marking Symbol: M2M Internal Connection 3 1 Symbol ce /D isc on tin Parameter 1: Anode 2: N.C. 3: Cathode Mini3-G1 Package EIAJ: SC-59 ■ Electrical Characteristics Ta = 25°C ± 3°C Forward voltage 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.2 –0.1 10˚ Conditions Min 2 Max Unit IF = 1 mA Typ 0.3 V IF = 30 mA 1.0 VR = 30 V 30 µA VR = 1 V, f = 1 MHz 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Rated input/output frequency: 2 GHz 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2004 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKH00077CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3X717 IF  VF IR  VR 103 103 −20°C 75°C 102 25°C IF = 30 mA 0.6 M Di ain sc te on na tin nc ue e/ d 10 0.8 Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 1.0 Ta = 125°C 75°C 25°C 102 Forward current IF (mA) VF  Ta 104 1 10 10−1 0.4 0.8 1.2 1.6 2.0 10−1 2.4 Forward voltage VF (V) 0 5 10 15 20 25 30 IR  Ta Ct  VR 3.2 3V 1V 102 10 1 f = 1 MHz Ta = 25°C 2.8 Terminal capacitance Ct (pF) VR = 30 V 103 2.4 2.0 1.6 1.2 0.8 0.4 0 0 40 80 120 160 0 5 10 15 20 an en int Ma 2 25 Reverse voltage VR (V) ce /D isc on tin Ambient temperature Ta (°C) 200 ue 10−1 −40 1 mA SKH00077CED 0 −40 0 40 80 120 Ambient temperature Ta (°C) Reverse voltage VR (V) 104 Reverse current IR (µA) 0.2 1 0 10 mA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10−2 0.4 30 160 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.