This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA4SD01
Silicon epitaxial planar type
Unit: mm
For high speed switching
1.6±0.05
1.0±0.05
4
1
5˚
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• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3S781 (MA781) is contained in one package (of a type
in the same direction)
(0.225)
1.15±0.05
1.6±0.1
■ Features
0.55±0.1
3
2
0.25±0.05
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0.10±0.03
5˚
Symbol
Reverse voltage
VR
Maximum peak reverse voltage
Forward current
VRM
Single
IF
Double
Peak forward current
Rating
Unit
30
V
30
V
30
mA
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
(0.15)
Parameter
0.01±0.01
■ Absolute Maximum Ratings Ta = 25°C
SSMini4-F1 Package
20
Single
IFM
150
Double
Marking Symbol: M1N
mA
Internal Connection
110
Junction temperature
Tj
Storage temperature
Tstg
125
°C
−55 to +125
°C
4
3
1
2
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
ce
/D
isc
on
tin
Parameter
Forward voltage
VF1
VF2
IR
Terminal capacitance
Ct
an
Reverse current
Reverse recovery time *
int
en
trr
Ma
η
Detection efficiency
Max
Unit
IF = 1 mA
Conditions
Min
Typ
0.35
V
IF = 30 mA
0.9
VR = 30 V
0.5
µA
VR = 1 V, f = 1 MHz
1.5
pF
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
VIN = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: trr measurement circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2004
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Note)
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
The part number in the parenthesis shows conventional part number.
SKH00102CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4SD01
IF V F
IR VR
103
103
VF T a
1.6
102
Reverse current IR (µA)
10
1
Ta = 125°C
10
75°C
1
1.2
0.8
IF = 30 mA
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Forward current IF (mA)
−20°C
Ta = 125°C
Forward voltage VF (V)
75°C 25°C
102
10−1
10–2
10−2
0.4
0.8
1.2
IR T a
5
10
15
20
30
10−1
40
120
an
en
int
Ma
1 mA
0
2.0
1.0
0
40
80
120
160
IF(surge) tW
103
0
10
20
Reverse voltage VR (V)
ce
/D
isc
on
tin
200
3 mA
Ambient temperature Ta (°C)
Forward surge current IF(surge) (A)
1
Ambient temperature Ta (°C)
2
25
Ct VR
VR = 30 V
10 V
1V
10
10−2
−40
0
0
−40
3.0
Terminal capacitance Ct (pF)
Reverse current IR (µA)
102
0.4
Reverse voltage VR (V)
Forward voltage VF (V)
ue
0
25°C
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10–1
SKH00102CED
30
Ta = 25°C
IF(surge)
tW
102
10
1
10 −1
10 −1
1
10
Pulse width tW (ms)
200
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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on es
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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int
en
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/D
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on
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ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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