MN13811SLU

Microcomputer Peripheral LSIs MN1380 Series CMOS LSIs for Voltage Detection Overview Pin Assignment M Di ain sc te on na tin nc ue e/ d The MN1380 series are elements that monitor the power supply voltage supplied to microcomputers and other LSI systems and issue reset signals for initializing the system after the power is first applied or for preventing runaway operation when the supply voltage fluctuates. There is a choice of three output types: CMOS output, N-channel open drain output, and inverted CMOS output. There are also three package types: M, TO-92, and a mini type for surface mounting. Choose the ideal element for your application from the series' wide selection of detection ranks (17 ranks between 2.0 and 4.9 volts), output types, and package types. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 23 MN1380 - R 2 3 1 M type package Features 1381 23R 1 an en int Applications Ma Battery checkers Power outage detectors Level discriminators Memory backup systems 2 3 TO-92 type package ce /D isc on tin ue Three-pin element requiring no adjustment Wide selection of detection ranks (17 ranks between 2.0 and 4.9 volts) Highly precise detection voltage Detection voltage with hysteresis characteristic ∆VD = 50 mV for ranks C to K ∆VD = 100 mV for ranks L to U Low current consumption: IDD = 1µA (typ.) for VDD =5V Low fluctuation in detection voltage with temperature (typ. 1 mV/˚C) Wide selection of output types: CMOS output, Nchannel open drain output, and inverted CMOS output Wide selection of package types: M, TO-92, and a mini type for surface mounting. 2 LCR 1 3 Mini type package 1=OUT 2=VDD 3=VSS Microcomputer reset circuits Reset circuits for other electronic circuits SAG00003CEM 1 MN1380 Series Microcomputer Peripheral LSIs MN1380 Series Naming Conventions The MN1380 series offers a wide selection of detection ranks, output types, package types, and packaging. All combinations use the following naming conventions. When ordering, be sure to give the correct part number using these naming conventions. MN13801–R (TA) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d Winding direction for tape packaging (TA) ...... Tape packaging for TO-92 type package (TX) ...... Embossed tape packing for mini type package (TW) ..... Embossed tape packing for mini type package For further details, see the package specifications. Detection voltage rank (C to U) Output type: Blank ········ CMOS output 1 ················ N-channel open drain output 2 ················ inverted CMOS output Package: 0 ················ M type package 1 ················ TO-92 type package 2 ················ Mini type package ue Matsushita Electronics Corporation MN1380 series of voltage detection CMOS LSIs with low current consumptions ce /D isc on tin (Example) Ma int en an MN13821–R (TW) Embossed tape packaging R rank (detection voltage of 4.0 to 4.3 V) N-channel open drain output Mini type package MN1380 series of voltage detection CMOS LSIs with low current consumption Minimum Packaging Unit Bulk (M and TO-92 types) ·············· 1,000 Magazine (Mini type) ······················ 50 Taping (Mini and TO-92 types) ······· 3,000 2 Microcomputer Peripheral LSIs MN1380 Series Series Lineup Package Output CMOS output M type Package MN1380 TO-92 type Package MN1381 Mini type Package MN1382 N-channel open drain output MN13801 MN13811 MN13821 Inverted CMOS output MN13802 MN13812 MN13822 Detection Ranks (on Voltage) Detection Voltage for Drop in Power Supply Voltage (VDL) Unit Detection Voltage Hysteresis Width (∆VD) M Di ain sc te on na tin nc ue e/ d Rank min 2.0 C max 2.2 2.1 2.3 E 2.2 2.4 F 2.3 2.5 G 2.4 2.6 H 2.5 2.7 J 2.6 2.9 K 2.8 3.1 L 3.0 3.3 M 3.2 3.5 N 3.4 3.7 max Unit di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. D min 3.6 3.9 3.8 4.1 R 4.0 4.3 S 4.2 4.5 T 4.4 4.7 U 4.6 4.9 50 300 mV V 50 300 mV V 100 300 mV Ma int en an ce /D isc on tin ue P Q V 3 MN1380 Series Microcomputer Peripheral LSIs Block Diagram 2 Voltage Reference 1 VDD + Comparator – M Di ain sc te on na tin nc ue e/ d *1 Output Circuit Level Converter 1 OUT + Comparator Voltage Reference 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. – 3 VSS Note *1: Circuits vary slightly depending on the output type (CMOS output, N-channel open drain output, or inverted CMOS output) Pin Descriptions Symbol OUT Function Description Reset signal output pin 2 VDD Power supply pin 3 VSS Ground pin Ma int en an ce /D isc on tin ue Pin No. 1 4 Microcomputer Peripheral LSIs Absolute Maximum Ratings MN1380 Series VSS=0V, Ta=25˚C Parameter Power supply voltage Symbol VDD Rating 7.0 Output voltage VO – 0.3 to VDD +0.3 V Operating ambient temperature Ta –20 to +70 ˚C Storage temperature Tstg –55 to +125 ˚C VSS=0V, Ta=25˚C M Di ain sc te on na tin nc ue e/ d Recommended Operating Conditions Unit V Power supply voltage Symbol VDD Conditions See Figures 1 and 4. Electrical Characteristics min 1.5 typ max 6.0 Unit V di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 1) DC Characteristics VSS=0V, Ta=–20˚C to +70˚C Parameter Power supply current Symbol Conditions IDD VDD = 5 V *1 min typ max Unit 1 5 µA *2 *2 V *2 *2 mV Load resistance = 10 kW Detection voltage for drop in power supply voltage *2 Detection voltage hysteresis width *2 "H" level output voltage VDL Ta=25˚C ∆VD See Figures 1 and 4. VOH CMOS output IOH=– 40µA Inverted VDD=1.8V CMOS output IOH=– 0.5mA VOL N-channel open VDD=1.8V drain output IOL=0.7mA Inverted VDD=6.0V 0.8 VDD VDD V –1.5 VSS 0.4 VSS 0.6 V ue "L" level output voltage 0.8VDD ce /D isc on tin CMOS output IOH=0.3mA Ma int en an Notes *1: This includes the output pin's leakage current. *2: For particulars, see the detection voltage rank table. 5 MN1380 Series Microcomputer Peripheral LSIs Electrical Characteristics (continued) 2) AC Characteristics Parameter VSS=0V, Ta=25˚C Symbol Conditions Rank C MN1380 MN1381 MN1382 Allowable Value (typ) MN13801 MN13802 MN13811 MN13812 MN13821 MN13822 Unit M Di ain sc te on na tin nc ue e/ d D E 3.0 2.5 230.0 F G tOH H Figures 2 and 3. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. See Reset release time J 3.0 3.0 100.0 2.0 4.0 30.0 250.0 160.0 3.0 115.0 100.0 3.0 15.0 35.0 3.0 µs K L M N P Q R S T C D E F G tOL Figures int en an 2 and 3. Ma H ue ce /D isc on tin See Reset time J K L M N P Q R S T 6 µs Microcomputer Peripheral LSIs MN1380 Series Description of Operation VDD M Di ain sc te on na tin nc ue e/ d VDH VDL 1.5V 0V VOUT di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. CMOS output, N-channel open drain output MN1380/1381/1382 MN13801/13811/13821 tOH tOH tOL 0V Inverted CMOS output Figure VOUT t tOL t MN13802/13812/13822 tOL tOL tOH ce /D isc on tin ue tOH 0V t int en an Figure 1. Description of Operation Ma Notes 1: Output cannot be specified for power supply voltages under 1.5 V because operation is not guaranteed for that range. 2: VDL: Detection voltage for drop in power supply voltage VDH: Detection voltage for rise in power supply voltage tOL : Time lag between the time that the power supply voltage reaches the detection voltage (VDL or VDH) and the time that the output pin (OUT) goes to "L" level. tOH : Time lag between the time that the power supply voltage reaches the detection voltage (VDL or VDH) and the time that the output pin (OUT) goes to "H" level. 3: These characteristics for the N-channel open drain output are when a load resistor is connected between the OUT and VDD pins. 7 MN1380 Series Microcomputer Peripheral LSIs Description for Measuring the Output Characteristics VDD M Di ain sc te on na tin nc ue e/ d 6.0V 1.6V 6.0V CMOS output, N-channel open drain output MN1380/1381/1382 MN13801/13811/13821 tOH 1.5V t di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0V tOL 1.0V 0V Inverted CMOS output 6.0V tOH ce /D isc on tin ue 1.6V 1.5V tOH 1.0V int en an 0V t MN13802/13812/13822 t Ma Figure 2. Description chart of Measuring the Output Characteristics 100kΩ VDD Switch: Connect when measuring N-channel open drain output (MN13801/MN13811/MN13821) MN1380 Series 100pF VOUT Figure 3. Circuit for Measuring the Output Characteristics 8 Microcomputer Peripheral LSIs MN1380 Series Description for Measuring the I/O Characteristics VOUT CMOS output, N-channel open drain output di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d MN1380/1381/1382 MN13801/13811/13821 ∆VD Operation indeterminate 0 0 1.5V VDL VOUT Inverted CMOS output en an ce /D isc on tin ue MN13802/13812/13822 VDD VDH int Operation indeterminate Ma 0 0 1.5V ∆VD VDD VDL VDH Figure 4. Description chart for Measuring the I/O Characteristics Notes 1: Output cannot be specified for power supply voltages under 1.5 V because operation is not guaranteed for that range. 2: VDL: Detection voltage for drop in power supply voltage VDH: Detection voltage for rise in power supply voltage 3: These characteristics for the N-channel open drain output are when a load resistor is connected between the OUT and VDD pins. 9 MN1380 Series Microcomputer Peripheral LSIs Application Circuit Example Connect resistors, capacitors, and the like only to the output pin on the MN1380 series element. Note that connecting them to the Power source pins changes VDH, VDL, and ∆VD. Sample Circuit 1 M Di ain sc te on na tin nc ue e/ d Sample Circuit 2 VDD di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. VDD R OUT MN1380 Series C Ma int en an ce /D isc on tin ue Select the values of R and C to match the application. 10 OUT MN1380 Series C 0.7R 0.85 1 0.55±0.1 1.25 2.5±0.5 2.5±0.5 2 3 di p Pl lan nc1.25 1.25 0.4 lud ea e se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo 1.0 .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy 4.1 4.5 on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en Note) The package will be changed to lead-free type (M3A). See the new package dimensions section later of this datasheet. int Ma M Di ain sc te on na tin nc ue e/ d Microcomputer Peripheral LSIs MN1380 Series Package Dimensions (Unit: mm) M type package 6.9 1.5 1.5 1.0 2.5 0.45±0.1 11 0.45 -0.1 +0.2 2.54±0.15 1 2 3 12 2.3±0.2 Note) The package will be changed to lead-free type (SSIP003-P-0000S). See the new package dimensions section later of this datasheet. di p Pl lan nclu 13.5±0.5 ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int Ma 5.1±0.2 M Di ain sc te on na tin nc ue e/ d MN1380 Series Microcomputer Peripheral LSIs Package Dimensions (Unit: mm)(continued) TO-92 type package 5.0±0.2 4.0±0.2 0.4±0.2 0.16 +0.2 -0.1 +0.1 -0.05 0.5 1.45 0.95 +0.2 -0.05 +0.1 -0.05 0.95 1.9±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e0.8ty ur 0.4 mi UR ue u0etod 0.1pe 1.1 pe Pro 2.9 co L a d t ty d uc n.p bo yp pe t li e an ut d fec as lat yc on es le ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int Note) The package will be changed to lead-free type (MINI-3DC). See the new package dimensions section later of this datasheet. Ma 0.5 M Di ain sc te on na tin nc ue e/ d Microcomputer Peripheral LSIs 0.65±0.15 MN1380 Series Package Dimensions (Unit: mm)(continued) Mini type package 2.8 -0.3 +0.2 1.5 -0.05 +0.25 0.65±0.15 0.1 to 0.3 13 MN1380 Series Microcomputer Peripheral LSIs Reference Characteristics The following characteristics curves represent results from a specific sample therefore they do not guarantee the characteristics for the final product. 1.4 M Di ain sc te on na tin nc ue e/ d 1.2 VSS OUT 0.8 VDD A 0.6 0.4 0.2 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. IDD(µA ) 1.0 0 1.0 2.0 3.0 4.0 VDD(V) 5.0 6.0 Figure 5.a. IDD vs. VDD Characteristic (Rank Q) ce /D isc on tin an 1.5 Figure 5.b. Measurement Circuit VSS OUT int en VDD A Ma IDD(µA ) 7.0 ue 2.0 V 1.0 5V 0.5 –40 –20 0 20 40 60 80 Ambient temperature, Ta (˚C) Figure 6.a. IDD Temperature Characteristic (Rank Q) 14 Figure 6.b. Measurement Circuit Microcomputer Peripheral LSIs MN1380 Series Reference Characteristics (continued) 4.8 4.6 4.4 VSS M Di ain sc te on na tin nc ue e/ d OUT VDH V VDD 4.0 VDL 3.8 3.6 3.4 –40 –20 0 20 40 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. VDL,VDH(V) 4.2 60 V 80 Temperature Ta(˚C) Figure 7.a. VDL/VDH Temperature Characteristic (Rank Q) 0.3 ce /D isc on tin ue 0.25 en an 0.15 Ma int ∆VD(V) 0.2 0.1 0.05 Figure 7.b. Measurement Circuit VSS OUT V VDD V 0 –40 –20 0 20 40 60 80 Ambient temperature, Ta (˚C) Figure 8.a. ∆VD Temperature Characteristic (Rank Q) Figure 8.b. Measurement Circuit 15 MN1380 Series Microcomputer Peripheral LSIs Reference Characteristics (continued) 3 –30˚C Room temperature M Di ain sc te on na tin nc ue e/ d 80˚C VSS 2 OUT 1 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. IOL(mA) VDD 1.8V 0 1.0 0.5 1.5 VOL(V) 2.0 2.5 20 ce /D isc on tin Room temperature 15 an en VDD int V 1 2 3 VOL(V) 4 Figure 10.a. IOH vs. VOH Characteristic 16 OUT 5V 5 0 VSS A Ma | IOH | (mA) 80˚C 10 Figure 9.b. Measurement Circuit ue –30˚C V 3.0 Figure 9.a. IOL vs. VOL Characteristic 0 A 5 Figure 10.b. Measurement Circuit Microcomputer Peripheral LSIs MN1380 Series Reference Characteristics (continued) 2.5 M Di ain sc te on na tin nc ue e/ d 2.0 VSS OUT VDD A di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. IOL(mA) 1.5 1.0 1.8V 0.5 0 –40 0 20 40 60 Ambient temperature, Ta (˚C) –20 80 Figure 11.a. IOL vs. Temperature Characteristic Figure 11.b. Measurement Circuit ce /D isc on tin ue 7.0 V an 6.0 en –20 OUT VDD 5V V 5.0 4.5 –40 VSS A int 5.5 Ma | IOH | (mA) 6.5 0 20 40 60 80 Ambient temperature, Ta (˚C) Figure 12.a. IOH vs. Temperature Characteristic Figure 12.b. Measurement Circuit 17 MN1380 Series Microcomputer Peripheral LSIs TO-92 Type Package Taping-Specifications (MN1381/MN13811/MN13812) ∆h1 A1 P ∆h2 t1 t2 W0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing W ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. H0 l1 H1 W2 H M Di ain sc te on na tin nc ue e/ d A P1 0 T d F1 F2 Drawing direction P0 øD0 Figure 13. TO-92 Type Package Taping-Dimensions (Ammunition pack) TO-92 Type Package Taping Dimensions (Ammunition pack) Name Product height* Symbol A Length (mm) 5.3 max Product width* A1 Product thickness* T Lead width* d Taped lead length l1 Product pitch P F1, F2 ∆h1, ∆h2 W int en an 0.5 max Distance to top of product H 25.0 max 12.7±1.0 Distance to bottom of product H0 19.0±0.5 12.7±0.3 Lead clinch height H1 16.0±0.5 Feed hole diameter D0 4.0±0.2 Tape thickness t1 0.7±0.2 Total tape thickness t2 1.5 max 2.0 max 6.35±0.5 2.5 +0.5 – 0.2 2.0 max 18.0 +1.0 – 0.5 Note*1: For further details, see the specifications issued separately. 25 elements (example) Ma W 330 9.0±0.5 W2 0.45 +0.15 – 0.1 H 250 D 41 Unit: mm Leave the space for at least three elements W Figure 14. Box Dimensions for TO-92 Type Packages with Ammunition pack 18 Length (mm) 6.0±0.5 B Tape width W1 Adhesive tape position E Product deflection angle Feed hole position 4.2 max H Lead spacing 5.2 max ue P0 P1 Symbol W0 ce /D isc on tin Feed hole pitch Feed hole position Name Adhesive tape width D Microcomputer Peripheral LSIs MN1380 Series Embossed Taping Specifications for Mini Type Package (MN1382/MN13821/MN13822) There is a choice of two orientations, TW and TX, for the product relative to the tape. TW TX Tape feed hole Tape feed hole M Di ain sc te on na tin nc ue e/ d Drawing direction (Marking surface on top) ø1.5 3.5±0.05 8.0±0.3 1.75±0.1 Figure 15. TW Orientation +0.1 -0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du ø13±0.5 n.p bo yp pe c ø80±1.0 an ut e d 3.3±0.1 1.75±0.1 t life as lat cy ø178±2.0 on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (Marking surface on top) Drawing direction Figure 16. TX Orientation Unit: mm 4.0±0.1 A t+0.3±0.1 B 3.2±0.1 4.0±0.1 Product orientation A is labeled TW; orientation B, TX. ce /D isc on tin ue Figure 17. Embossed Taping Dimensions for Mini Type Package Ma int en an ø21±0.8 Unit: mm 0.5 2± 2±0.5 10±1.5 3,000 packages per reel Figure 18. Embossed Taping Reel Dimensions for Mini Type Package 19 MN1380 Series Microcomputer Peripheral LSIs Reliability Testing Results for MN1380 Series (1) M type package (MN1380/MN13801/MN13802) and TO-92 type package (MN1381/MN13811/MN13812) Test Subjects Operating lifetime test Test Conditions Results VDD=5.5V, Ta=125˚C, t=1000hrs 0/15 High-temperature storage test Ta=150˚C, t=1000hrs 0/15 Low-temperature storage test Ta=–65˚C, t=1000hrs 0/15 High-temperature, Ta=85˚C, RH=85%, t=1000hrs 0/15 M Di ain sc te on na tin nc ue e/ d high-humidity storage test High-temperature, VDD=5.5V, Ta=85˚C, RH=85%, t=1000hrs 0/15 Ta=150˚C and –65˚C. 0/15 Thermal shock test di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. high-humidity bias test Five minutes at each temperature for ten cycles Temperature cycle test Ta=150˚C and –65˚C. 0/15 Thirty minutes at each temperature for ten cycles Pressure cooker test Two atmospheres for 50 hours at ambient temperature (Ta) of 121˚C 0/15 Soldering test Ambient temperature (Ta) of 230˚C for five seconds 0/15 Solder heat resistance test Ambient temperature (Ta) of 270˚C for ten seconds 0/15 (2) Mini type package (MN1382/MN13821/MN13822) Test Subjects Operating lifetime test Test Conditions VDD=5.5V, Ta=125˚C, t=1000hrs High-temperature storage test Ta=150˚C, t=1000hrs Results 0/15 0/15 Low-temperature storage test Ta=–65˚C, t=1000hrs 0/15 High-temperature, Ta=85˚C, RH=85%, t=1000hrs 0/15 VDD=5.5V, Ta=85˚C, RH=85%, t=1000hrs 0/15 Ta=150˚C and –65˚C. 0/15 high-humidity storage test High-temperature, high-humidity bias test ue Thermal shock test ce /D isc on tin Five minutes at each temperature for ten cycles Temperature cycle test Ta=150˚C and –65˚C. 0/15 Thirty minutes at each temperature for ten cycles Two atmospheres for 24 hours at ambient temperature (Ta) of 121˚C 0/15 Soldering test Ambient temperature (Ta) of 230˚C for five seconds 0/15 Ambient temperature (Ta) of 260˚C for five seconds 0/15 an Pressure cooker test *1 Ma int en Solder heat resistance test *1 Note*1: Note that the testing conditions for the mini package differ from those for the other two packages. 20 ±0.20 2−R0.70 1 3 (0.85) 0.40+0.10 -0.05 0.55±0.10 2.50 2.50 ±0.20 ±0.10 (0.40) (1.50) ±0.10 6.90±0.10 ±0.20 ±0.10 di p Pl lan nclu ea e se pla m d m des 1.00 ne ain ain foll htt visit 2.25 2.85 3.50 d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct (1.00) life an ut e d as lat 4.10 cy 4.50 on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d Microcomputer Peripheral LSIs MN1380 Series • M3A (Lead-free package) New Package Dimensions (Unit: mm) (1.50) 2.50±0.10 R0.90 (1.00) 21 22 (1.00) 0.60±0.15 0.40±0.10 1 1.27 3 1.27 ±0.50 di p Pl lan nclu ea e se pla m d m des 13.30 v f a n a o i htt sit ed int int llo p:/ fo e /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int Ma 5.00±0.20 (1.00) M Di ain sc te on na tin nc ue e/ d MN1380 Series Microcomputer Peripheral LSIs • SSIP003-P-0000S (Lead-free package) New Package Dimensions (Unit: mm)(continued) 5.00±0.20 4.00±0.20 0.40+0.10 -0.05 2.30±0.20 +0.20 -0.10 1 3 0.95 0.95 1.90+0.20 2.90+0.20 -0.05 Seating plane 0.40±0.20 +0.10 -0.06 +0.20 -0.30 +0.25 -0.05 (0.65) 2 +0.30 -0.10 di p Pl lan nclu ea 1.10 e se pla m 0dtom0.10des1.20 (0.65)1.50 ne ain ain foll htt visit d te t o p:/ fo 2.80 /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es 0.16 cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d Microcomputer Peripheral LSIs MN1380 Series • MINI-3DC (Lead-free package) New Package Dimensions (Unit: mm)(continued) (1.45) 0.40+0.10 -0.05 0.10 to 0.30 23 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.