MTMC8E2A0LBF

Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 8 7 6 5 1 2 3 4 0.16 2.4 2.8  Features  Low drain-source On-state Resistance RDS(on) typ. = 15 m (VGS =4.5 V)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.65  Marking Symbol: 4B  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. 2. 3. 4. Source Gate Source Gate 5. 6. 7. 8. Panasonic JEITA Code  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Drain-source Voltage FET1 Gate-source Voltage FET2 Drain current Peak drain current Total power dissipation Overall Note) Channel temperature Operating ambient temperature Storage temperature (0.81) VDS VGS ID IDp PD1 *1 PD2 *1,2 PD3 *3 Tch Topr Tstg Drain Drain Drain Drain WMini8-F1 SC-115 ― Internal Connection Rating Unit 20 12 7.0 42 1.0 1.2 0.4 150 -40 to + 85 -55 to +150 V V A A (D) (D) (D) (D) 8 7 6 5 FET 1 Rg W °C °C °C 1 (S1) FET 2 Rg 2 (G1) 3 (S2) 4 (G2) *1 Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm Copper foil of the drain portion should have a area of 300 mm2 or more PD absolute maximum rating without a heat shink: 400 mW *2 t = 10 s *3 Stand-alone (without the board) 1. 2. 3. 4. Pin Name Source Gate Source Gate Resistance Value 5. 6. 7. 8. Rg Drain Drain Drain Drain 1 k Page 1 of 6 Established : 2010-01-06 Revised : 2013-09-02 Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF  Electrical Characteristics Ta = 25C  3C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Symbol Conditions ID = 1.0 mA, VGS = 0 VDS = 20 V, VGS = 0 VGS = 8.0 V, VDS = 0 ID = 1.0 mA, VDS = 10 V RDS(ON)1 ID = 2.0 A, VGS = 4.5 V Drain-source ON resistance RDS(ON)2 ID = 2.0 A, VGS = 3.7 V RDS(ON)3 ID = 2.0 A, VGS = 2.5 V Forward transfer admittance |Yfs| ID = 1.0 A, VDS = 10 V Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) VDS = 10 V, VGS = 0, f = 1 MHz Coss Reverse transfer capacitance (Common source) Crss td(on) VDD = 10 V, VGS = 0 V to 4 V Turn-on delay time *1 tr ID = 1.0 A Rise time *1 td(off) VDD = 10 V, VGS = 4 V to 0 V Turn-off delay time *1 tf ID = 1.0 A Fall time *1 Note) VDSS IDSS IGSS Vth Min Typ Max 0.85 15 18 22 1.0 10 1.30 21 25 33 20 0.40 3.0 1450 100 90 0.33 0.70 4.0 2.0 Unit V μA μA V m m m S pF pF pF μs μs μs μs 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2 of 6 Established : 2010-01-06 Revised : 2013-09-02 Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 3 of 6 Established : 2010-01-06 Revised : 2013-09-02 Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF Technical Data ( reference ) ID - VDS ID - VGS 10 VGS = 4.5 V 5 8 Drain current ID (A) Drain Current ID (A) 6 3.7 V 4 2.5 V 3 2.0 V 2 1 1.5 V 0.1 0.2 25 ℃ 4 -40 ℃ 2 0 0 Ta = 85℃ 6 0 0.3 0 Drain-source Voltage VDS (V) 1 1.5 2 2.5 Gate-source voltage VGS (V) VDS - VGS RDS(on) - ID 100 Drain-source On-state Resistance RDS(on) (m) 0.3 Drain-source Voltage VDS (V) 0.5 0.25 0.2 ID = 4.0A 0.15 2.0A 0.1 0.05 1.0A 0 0 2 4 6 Gate-source Voltage VGS (V) 8 2.5 V 3.7 V 10 VGS = 4.5 V 1 1 10 Drain Current ID (A) Page 4 of 6 Established : 2010-01-06 Revised : 2013-09-02 Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF Technical Data ( reference ) RDS(on) - Ta 2 40 Drain-source On-resistance RDS(on) (mΩ) Gate-source Threshold Voltage Vth (V) Vth - Ta 1.5 1 0.5 0 -50 0 50 100 30 VGS = 2.5 V 3.7 V 20 4.5 V 10 0 150 -50 Temperature (℃) 0 50 100 150 Temperature(℃) Total Power Dissipation PD (W) PD - Ta 2 1.5 1 0.5 0 0 50 100 150 Temperature Ta (C) Safe Operating Area 1000 1000 IDp = 42 A Drain Current ID (A) Thermal Resistance Rth (C/W) Rth - tsw 100 10 1 0.01 100 10 1 ms 1 10 ms Operation in this area is limited by RDS(on) 0.1 100 ms 1s Ta = 25 °C, Glass epoxy board (25.4  25.4  t0.8 mm)coated with copper foil, DC which has more than 300 mm2. 0.1 1 10 Pulse Width tsw (s) 100 1000 0.01 0.01 0.1 1 10 100 Drain-source Voltage VDS (V) Page 5 of 6 Established : 2010-01-06 Revised : 2013-09-02 Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF WMini8-F1 Unit : mm 2.9±0.1 +0.10 0.16-0.05 6 5 1 2 3 4 (0.2) (5°) 7 2.4±0.1 8 2.8±0.1 +0.10 0.30-0.05 0 to 0.02 (5°) (0.15) 0.80±0.05 0.65  Land Pattern (Reference) (Unit : mm) 0.65 2.4 0.65 0.65 0.65 0.4 Page 6 of 6 Established : 2010-01-06 Revised : 2013-09-02 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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