03P4MG

DATA SHEET THYRISTORS 03P4MG,03P6MG 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR DESCRIPTION The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs with an average on-state current of 300 mA. The repeat peak off-state voltages (and reverse voltages) are 400 and 600 V. PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. FEATURES • 400 and 600 V high-withstanding-voltage series of products • The non-repetitive withstanding voltage is a high 700 V, making it easy to harmonize the rise voltage of the surge absorber. • High-sensitivity thyristor (IGT = 3 to 50 µA) • Employs flame-retardant epoxy resin (UL94V-0) 1.5 Electrode connection 1: Gate 2: Anode 3: Cathode *TC test bench-mark Standard weight: 0.3 g 0.5 1.27 1.77 MAX. APPLICATIONS Leakage breakers, SSRs, various type of alarms, consumer electronic equipments and automobile electronic components 1 2 3 2.54 4.2 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol 03P4MG Non-repetitive Peak Reverse Voltage Non-repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Repetitive Peak Off-state Voltage Average On-state Current Effective On-state Current VRSM VDSM VRRM VDRM IT(AV) IT(RMS) ITSM 700 700 400 400 Ratings 03P6MG 700 700 600 600 V V V V mA mA A As A/µs mW mW mA V °C °C 2 12.7 MIN. 5.5 MAX. Unit Remarks RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Refer to Figure 10. − Refer to Figure 2. − − Refer to Figure 3. Refer to Figure 3. − − − − 300 (TA = 30°C, Single half-wave, θ = 180°) 470 8 (f = 50 Hz, Sine half-wave, 1 cycle) 0.15 (1 ms ≤ t ≤ 10 ms) 20 100 (f ≥ 50 Hz, Duty ≤ 10%) 10 100 (f ≥ 50 Hz, Duty ≤ 10%) 6 −40 to +125 −55 to +150 5 Surge On-state Current Fusing Current Critical Rate of On-state Current of Rise Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Forward Current Peak Gate Reverse Voltage Junction Temperature Storage Temperature ∫ iT dt 2 dIT/dt PGM PG(AV) IFGM VRGM Tj Tstg The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15290EJ4V0DS00 (4th edition) Date Published February 2003 NS CP(K) Printed in Japan The mark 5 shows major revised points. 2002 03P4MG,03P6MG ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 kΩ) Parameter Symbol Conditions Specifications MIN. Non-repetitive Peak Reverse Current Non-repetitive Peak Off-state Current Critical Rate-of-rise of Off-state Voltage On-state Voltage Gate Trigger Current Gate Trigger Voltage Gate Non-trigger Voltage Holding Current Turn-off Time VT IGT VGT VGD IH tq IT = 4 A VDM = 6 V, RL = 100 Ω VDM = 6 V, RL = 100 Ω VDRM Tj = 125°C, VDM = 2 VDM = 24 V, ITM = 4 A Tj = 125°C, IT = 200 mA, dIR/dt = 15 A/µs, VR ≥ 25 V, 2 VDM = 3 VDRM, dVD/dt = 10 V/µs Thermal Resistance Rth(j-C) Rth(j-A) Junction-to-case DC Junction-to-ambient DC − − − − 50 230 °C/W °C/W Refer to Figure 14. Refer to Figure 14. − 3 − 0.2 − − − − − − − 60 2.2 50 0.8 − 5 − V Refer to Figure 1. − − − − − dVD/dt IDRM VDM = VDRM IRRM VRM = VRRM Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 2 Tj = 125°C, VDM = VDRM 3 − − − − 10 TYP. − − − − − MAX. 10 100 10 100 − Unit Remarks µA µA µA µA V/µs − − − − − µA V V mA µs TYPICAL CHARACTERISTICS (TA = 25°C) Figure 1. iT vs. υT Characteristics 10000 MAX. Figure 2. ITSM Rating 14 At initial, Tj = 125˚C ITSM 10 ms 20 ms Surge On-state Current ITSM (A) 2 3 On-state Current iT (mA) 12 10 8 6 4 2 1000 Tj = 125˚C 25˚C 100 10 0 1 0 1 5 10 50 100 On-state Voltage υT (V) Cycles (N) 2 Data Sheet D15290EJ4V0DS 03P4MG,03P6MG Figure 3. Gate Rating 5.0 1.2 Figure 4. Example of Gate Characteristics Gate Forward Voltage VFG (V) Gate Trigger Voltage VGT (V) 4.0 1.0 0˚C 0.8 0.6 0.4 0.2 25˚C Tj = −40˚C 3.0 PGM = 100 mW 2.0 PG(AV) = 10 mW 1.0 IFG = 100 mA 0 0 0 20 40 60 80 100 Gate Forward Current IFG (mA) 120 0 50 100 150 200 250 300 Gate Trigger Current IGT (µA) 350 Figure 5. IGT vs. TA Example of Characteristics 100 Figure 6. VGT vs. TA Example of Characteristics 1.2 Gate Trigger Current IGT (µA) 10 Gate Trigger Voltage VGT (V) −40 −20 0 20 40 60 80 100 120 140 Ambient Temperature TA (°C) 1.0 0.8 0.6 1 0.4 0.2 0.1 0 −40 −20 0 20 40 60 80 100 120 140 Ambient Temperature TA (°C) Figure 7. iGS vs. τ Example of Characteristics 10 Figure 8. υGT vs. τ Example of Characteristics 1.0 TA = 25˚C Supply Gate Trigger Current iGS (mA) TA = 25˚C Gate Trigger Voltage υGT (V) 1000 5 iGS RGK 1 kΩ 0.8 0.6 1 0.5 0.4 0.2 0.1 1 10 100 Pulse Width τ (µs) 0 1 10 100 Pulse Width τ (µs) 1000 Data Sheet D15290EJ4V0DS 3 03P4MG,03P6MG Figure 9. PT(AV) vs. IT(AV) Characteristics Average On-state Power Dissipation PT(AV) (W) 0.7 0.6 0.5 0.4 0.3 60˚ 0.2 0.1 0 30˚ 90˚ Single Half-wave Figure 10. TA vs. IT(AV) Characteristics Single Half-wave 120 Ambient Temperature TA (°C) θ θ = 180˚ 120˚ DC 100 80 60 40 20 0 θ 30˚ 0 60˚ 90˚ 120˚ θ = 180˚ DC 500 0 100 200 300 400 Average On-state Current IT(AV) (mA) 500 100 200 300 400 Average On-state Current IT(AV) (mA) Figure 11. PT(AV) vs. IT(AV) Characteristics Average On-state Power Dissipation PT(AV) (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 30˚ 90˚ 60˚ 120˚ Single Full-wave Figure 12. TA vs. IT(AV) Characteristics Single Full-wave 120 Ambient Temperature TA (°C) θ θ = 180˚ 100 80 60 40 20 30˚ 0 60˚ 90˚ 120˚ θ θ = 180˚ 500 0 100 200 300 400 Average On-state Current IT(AV) (mA) 500 0 100 200 300 400 Average On-state Current IT(AV) (mA) Figure 13. IH vs. TA Example of Characteristics 10 5 Holding Current IH (mA) 1 0.5 0.1 −40 −20 0 20 40 60 80 100 120 140 Ambient Temperature TA (°C) 4 Data Sheet D15290EJ4V0DS 03P4MG,03P6MG Figure 14. Zth Characteristics 1000 Transient Thermal Impedance Zth (°C/W) Connection to ambient 100 10 1 0.001 0.01 0.1 1 10 100 1000 Time t (s) Data Sheet D15290EJ4V0DS 5 03P4MG,03P6MG • The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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