2SC2334

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ORDERING INFORMATION Part No. 2SC2334 Package TO-220AB FEATURES • Low collector saturation voltage • Fast switching speed • Complementary transistor: 2SA1010 (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 150 100 7.0 7.0 15 3.5 40 1.5 150 −55 to +150 Unit V V V A A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14902EJ2V1DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan 2002 2SC2334 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 Collector cutoff current ICBO ICER ICEX1 ICEX2 Emitter cutoff current DC current gain IEBO hFE1 hFE2 hFE3 Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions IC = 5.0 A, IB1 = 0.5 A, L = 1 mH IC = 5.0 A, IB1 = −IB2 = 0.5 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped IC = 10 A, IB1 = 1.0 A, IB2 = −0.5 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped VCB = 100 V, IE = 0 A VCE = 100 V, RBE = 51 Ω, TA = 125°C VCE = 100 V, VBE(OFF) = −1.5 V VCE = 100 V, VBE(OFF) = −1.5 V, TA = 125°C VEB = 5.0 V, IC = 0 A VCE = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 3.0 A VCE = 5.0 V, IC = 5.0 A IC = 5.0 A, IB = 0.5 A IC = 5.0 A, IB = 0.5 A Note Note Note MIN. 100 100 100 TYP. MAX. Unit V V V 10 1.0 10 1.0 10 40 40 20 0.6 1.5 0.5 1.5 0.5 200 µA mA µA mA µA Note Note V V IC = 5.0 A, RL = 10 Ω, IB1 = −IB2 = −0.5 A, VCC ≅ 50 V Refer to the test circuit. µs µs µs Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking hFE2 M 40 to 80 L 60 to 120 K 100 to 200 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Data Sheet D14902EJ2V1DS 2SC2334 TYPICAL CHARACTERISTICS (TA = 25°C) Total Power Dissipation PT (W) 2 mm aluminum board, no insulating board, grease coating, natural air cooling With infinite heatsink Ambient Temperature TA (°C) Derating dT (%) Case Temperature TC (°C) Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance rth(j-c) (°C/W) Pulse Width PW (ms) Data Sheet D14902EJ2V1DS 3 4 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) DC Current Gain hFE Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector Current IC (A) Pulse test Collector Current IC (A) Data Sheet D14902EJ2V1DS Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector Current IC (A) Pulse test 2SC2334 2SC2334 PACKAGE DRAWING (UNIT: mm) 1. Base 2. Collector 3. Emitter 4. Fin (collector) Data Sheet D14902EJ2V1DS 5 2SC2334 • T he information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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