2SC5509

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz • fT = 25 GHz technology adopted • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5509 2SC5509-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 100 190 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Free Air Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10009EJ01V0DS (1st edition) Date Published October 2001 CP(K) Printed in Japan © NEC Compound Semiconductor Devices 2001 2SC5509 THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 95 650 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point fT S21e NF Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 2 V, IC = 10 mA − − 50 − − 70 600 600 100 nA nA − VCE = 3 V, IC = 90 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 , IC = 10 mA, f = 2 Hz, ZS = Zopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 70 mA VCE = 2 V, IC = 70 mA Note 5 13 8 – − − − − − 15 11 1.2 0.5 14 15 17 27 − − 1.7 0.75 − − − − GHz dB dB pF dB dB dBm dBm MAG MSG Note 3 Note 4 PO (1 dB) OIP3 , f = 2 GHz , f = 2 GHz Note 5 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = 4. MSG = S21 (K – √ (K2 – 1) ) S12 S21 S12 5. Collector current when PO (1 dB) is output hFE CLASSIFICATION Rank Marking hFE Value FB T80 50 to 100 2 Data Sheet PU10009EJ01V0DS 2SC5509 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) Thermal/DC Characteristics TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE 400 Total Power Dissipation Ptot (mW) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 2 V Collector Current IC (mA) 350 330 When case temperature is specified 300 Mounted on 40 250 ceramic substrate 200 190 (15 × 15 mm, t = 0.6 mm) 30 150 Free Air 20 100 50 0 25 50 75 100 125 150 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature TA (˚C), Case Temperature TC (˚C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 150 200 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V Collector Current IC (mA) 100 50 0 µA IB = 1 10 µ A 1 000 900 µ A 800 µ A 700 µ A 600 µ A 500 µ A 400 µ A 300 µ A 200 µ A 100 µ A DC Current Gain hFE 150 100 50 0 1 2 3 4 5 0 0.001 0.01 0.1 1 10 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Capacitance/fT Characteristics REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 1.00 f = 1 MHz 0.80 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz 25 20 15 10 5 0 1 0.60 0.40 0.20 0 1.0 2.0 3.0 4.0 5.0 10 100 1 000 Collector to Base Voltage VCB (V) Data Sheet PU10009EJ01V0DS Collector Current IC (mA) 3 2SC5509 Gain Characteristics INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 1.0 Frequency f (GHz) |S21e|2 MSG MAG VCE = 2 V IC = 50 mA 10.0 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 |S21e| 2 30 25 20 MSG 15 10 5 0 MAG VCE = 2 V f = 2 GHz VCE = 2 V f = 1 GHz MSG MAG |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Output Characteristics OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 25 20 15 10 5 0 –5 –15 IC VCE = 2 V f = 1 GHz 150 Pout 125 100 75 50 25 0 15 25 20 15 10 5 0 –5 –15 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER VCE = 2 V f = 2 GHz Pout 100 75 50 IC 25 0 15 150 125 Collector Current IC (mA) –10 –5 0 5 10 –10 –5 0 5 10 Input Power Pin (dBm) Input Power Pin (dBm) 4 Data Sheet PU10009EJ01V0DS Collector Current IC (mA) Output Power Pout (dBm) Output Power Pout (dBm) 2SC5509 Noise Characteristics NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 5.0 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 6.0 5.0 Noise Figure NF (dB) 30 VCE = 2 V f = 1.5 GHz 25 20 Ga 15 10 5 NF 0 100 VCE = 2 V f = 1 GHz Associated Gain Ga (dB) 4.0 3.0 2.0 1.0 Ga 20 15 10 5 4.0 3.0 2.0 1.0 0.0 NF 0.0 1 10 Collector Current IC (mA) 0 100 1 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6.0 5.0 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 6.0 5.0 Noise Figure NF (dB) 30 VCE = 2 V f = 2.5 GHz 25 20 15 Ga 10 NF 5 0 100 VCE = 2 V f = 2 GHz Associated Gain Ga (dB) 4.0 3.0 2.0 1.0 0.0 Ga 20 15 10 5 0 100 4.0 3.0 2.0 1.0 0.0 NF 1 10 Collector Current IC (mA) 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10009EJ01V0DS 5 Associated Gain Ga (dB) 25 Associated Gain Ga (dB) 25 2SC5509 S-PARAMETERS VCE = 2 V, IC = 5 mA Frequency (GHz) MAG. S11 ANG. (deg.) −28.2 −53.3 −74.8 −92.9 −108.1 −121.0 −132.0 −141.6 −149.9 −157.3 −164.0 −170.0 −175.5 179.5 174.7 170.4 166.2 162.4 158.8 155.2 152.2 148.9 146.0 143.3 140.4 137.9 135.3 133.7 132.1 130.0 121.2 MAG. S21 ANG. (deg.) 161.9 147.0 134.8 124.5 116.0 108.6 102.3 96.6 91.5 86.9 82.6 78.6 74.9 71.3 67.9 64.6 61.4 58.4 55.5 52.6 49.8 47.1 44.4 41.8 39.2 36.7 34.4 33.0 31.3 29.1 16.5 MAG. S12 ANG. (deg.) 72.3 60.2 50.9 42.8 36.7 31.7 27.8 24.7 21.8 19.7 17.7 16.0 14.6 13.4 12.3 11.3 10.4 9.6 8.9 8.4 7.7 7.0 6.5 6.0 5.5 4.8 4.9 7.1 8.4 8.0 9.0 MAG. S22 ANG. (deg.) −19.5 −35.9 −49.6 −61.4 −71.5 −80.4 −88.6 −96.2 −103.3 −110.1 −116.6 −123.0 −129.1 −134.9 −140.6 −146.1 −151.4 −156.5 −161.2 −165.8 −170.2 −174.2 −178.1 178.2 174.6 170.4 165.9 162.7 162.4 161.5 149.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 0.79 0.75 0.73 0.71 0.69 0.68 0.67 0.67 0.67 0.67 0.67 0.67 0.67 0.67 0.68 0.68 0.69 0.69 0.69 0.70 0.71 0.71 0.72 0.72 0.72 0.73 0.72 0.73 0.73 0.74 0.80 14.75 13.32 11.81 10.40 9.18 8.15 7.28 6.55 5.94 5.42 4.97 4.59 4.25 3.96 3.70 3.47 3.26 3.07 2.90 2.74 2.60 2.47 2.35 2.24 2.14 2.03 1.93 1.84 1.79 1.73 1.27 0.03 0.05 0.07 0.08 0.09 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.93 0.84 0.74 0.65 0.58 0.51 0.46 0.42 0.38 0.35 0.33 0.31 0.30 0.29 0.28 0.27 0.27 0.27 0.27 0.27 0.27 0.27 0.28 0.28 0.29 0.29 0.30 0.29 0.28 0.29 0.38 6 Data Sheet PU10009EJ01V0DS 2SC5509 VCE = 2 V, IC = 10 mA Frequency (GHz) MAG. S11 ANG. (deg.) −42.0 −75.4 −100.3 −118.7 −132.8 −144.0 −153.1 −160.9 −167.5 −173.5 −178.7 176.5 172.1 168.0 164.2 160.7 157.2 154.0 151.0 148.0 145.4 142.6 140.1 137.7 135.1 132.9 130.5 129.0 127.8 126.0 118.7 107.5 MAG. S21 ANG. (deg.) 156.3 138.3 125.1 115.1 107.2 100.7 95.1 90.3 86.0 82.0 78.4 75.0 71.7 68.6 65.6 62.8 60.0 57.3 54.7 52.1 49.7 47.3 44.9 42.5 40.2 37.9 35.8 34.6 33.1 31.1 19.9 5.8 MAG. S12 ANG. (deg.) 67.9 53.8 45.8 39.3 35.3 32.5 30.7 29.3 28.2 27.5 26.8 26.5 25.9 25.6 25.3 24.8 24.3 23.9 23.4 23.1 22.7 21.9 21.4 20.9 20.2 19.6 19.7 21.2 21.6 20.6 17.6 13.1 MAG. S22 ANG. (deg.) −29.3 −52.4 −70.5 −85.4 −97.8 −108.7 −118.3 −127.1 −135.0 −142.2 −148.8 −154.9 −160.6 −165.8 −170.6 −175.0 −179.2 176.9 173.3 169.8 166.7 163.7 160.8 158.0 155.2 152.2 148.9 145.9 145.0 144.3 136.2 125.3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 0.65 0.63 0.63 0.62 0.62 0.63 0.63 0.63 0.64 0.64 0.65 0.65 0.65 0.66 0.67 0.67 0.68 0.68 0.69 0.69 0.70 0.70 0.71 0.71 0.72 0.72 0.72 0.72 0.73 0.74 0.80 0.83 23.47 19.87 16.55 13.88 11.82 10.22 8.97 7.96 7.15 6.47 5.89 5.41 4.99 4.63 4.32 4.04 3.79 3.56 3.36 3.17 3.01 2.86 2.71 2.58 2.46 2.34 2.22 2.11 2.05 1.99 1.45 1.09 0.03 0.04 0.05 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.10 0.10 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.12 0.13 0.14 0.88 0.75 0.63 0.54 0.48 0.43 0.40 0.37 0.36 0.34 0.34 0.33 0.33 0.33 0.33 0.33 0.33 0.34 0.34 0.35 0.35 0.36 0.37 0.37 0.38 0.39 0.39 0.39 0.38 0.39 0.47 0.53 Data Sheet PU10009EJ01V0DS 7 2SC5509 VCE = 2 V, IC = 20 mA Frequency (GHz) MAG. S11 ANG. (deg.) −63.8 −103.8 −127.4 −142.7 −153.8 −162.3 −169.2 −175.1 179.8 175.2 171.1 167.2 163.7 160.3 157.1 154.1 151.2 148.5 145.8 143.2 140.9 138.4 136.2 134.0 131.6 129.6 127.3 125.8 124.9 123.4 116.8 106.4 MAG. S21 ANG. (deg.) 149.5 129.5 116.5 107.3 100.5 94.9 90.1 86.0 82.2 78.8 75.6 72.5 69.6 66.9 64.1 61.6 59.0 56.5 54.2 51.8 49.5 47.3 45.1 42.9 40.7 38.6 36.6 35.5 34.4 32.4 22.1 8.9 MAG. S12 ANG. (deg.) 64.8 50.4 44.2 41.0 39.5 39.0 38.8 38.9 38.8 38.8 38.7 38.6 38.3 38.0 37.5 37.0 36.3 35.7 35.0 34.3 33.5 32.5 31.7 30.8 29.8 28.9 28.6 29.6 29.9 28.1 23.2 15.7 MAG. S22 ANG. (deg.) −41.4 −71.4 −93.1 −109.7 −122.8 −133.6 −142.6 −150.4 −157.1 −163.0 −168.3 −173.1 −177.5 178.5 174.8 171.4 168.2 165.1 162.2 159.5 156.9 154.4 152.0 149.6 147.3 144.8 142.0 139.1 138.1 137.6 130.3 119.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 0.50 0.54 0.57 0.59 0.60 0.61 0.61 0.62 0.63 0.63 0.64 0.64 0.65 0.66 0.66 0.67 0.67 0.68 0.68 0.69 0.70 0.70 0.71 0.71 0.72 0.72 0.72 0.72 0.72 0.74 0.80 0.83 33.35 25.91 20.30 16.37 13.60 11.58 10.05 8.86 7.91 7.12 6.47 5.93 5.46 5.06 4.70 4.40 4.12 3.87 3.65 3.44 3.26 3.10 2.94 2.80 2.66 2.53 2.41 2.28 2.22 2.16 1.54 1.16 0.02 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.08 0.08 0.08 0.09 0.09 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.13 0.14 0.81 0.65 0.55 0.48 0.44 0.42 0.40 0.39 0.39 0.38 0.38 0.38 0.39 0.39 0.40 0.40 0.41 0.41 0.42 0.42 0.43 0.44 0.45 0.45 0.46 0.47 0.48 0.47 0.46 0.47 0.55 0.60 8 Data Sheet PU10009EJ01V0DS 2SC5509 VCE = 2 V, IC = 50 mA Frequency (GHz) MAG. S11 ANG. (deg.) −99.2 −133.4 −150.6 −161.3 −169.1 −175.2 179.7 175.2 171.3 167.6 164.2 161.0 158.0 155.2 152.4 149.8 147.1 144.8 142.4 140.0 137.9 135.6 133.5 131.5 129.3 127.4 125.1 123.4 122.9 121.6 115.4 105.2 MAG. S21 ANG. (deg.) 143.0 122.2 110.1 102.0 96.0 91.0 86.9 83.2 79.8 76.7 73.7 70.9 68.2 65.6 63.1 60.7 58.3 55.9 53.7 51.5 49.3 47.2 45.1 43.0 40.9 38.9 36.9 35.8 35.1 33.2 23.2 10.8 MAG. S12 ANG. (deg.) 59.2 50.6 48.2 47.8 48.3 48.7 49.1 49.6 49.7 49.5 49.0 48.7 48.0 47.2 46.5 45.5 44.4 43.5 42.3 41.3 40.1 38.9 37.8 36.6 35.4 34.4 33.6 34.3 34.4 32.2 25.7 17.6 MAG. S22 ANG. (deg.) −55.1 −90.5 −113.6 −129.7 −141.6 −150.8 −158.3 −164.6 −169.9 −174.7 −178.9 177.3 173.8 170.5 167.4 164.5 161.8 159.1 156.7 154.2 152.0 149.8 147.6 145.5 143.4 141.1 138.6 135.7 134.7 134.4 126.9 126.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 0.39 0.51 0.56 0.58 0.60 0.61 0.62 0.62 0.63 0.64 0.64 0.65 0.65 0.66 0.67 0.67 0.68 0.68 0.69 0.70 0.70 0.71 0.71 0.72 0.72 0.73 0.73 0.72 0.72 0.74 0.81 0.84 41.74 29.88 22.35 17.59 14.41 12.16 10.50 9.22 8.20 7.38 6.70 6.12 5.63 5.21 4.84 4.52 4.23 3.98 3.75 3.54 3.35 3.18 3.02 2.87 2.73 2.60 2.47 2.33 2.26 2.21 1.52 1.14 0.02 0.03 0.03 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.07 0.07 0.07 0.08 0.08 0.09 0.09 0.09 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.13 0.14 0.15 0.71 0.57 0.50 0.46 0.44 0.43 0.43 0.43 0.43 0.43 0.43 0.44 0.44 0.45 0.45 0.46 0.46 0.47 0.48 0.48 0.49 0.50 0.51 0.51 0.52 0.53 0.53 0.53 0.52 0.53 0.62 0.66 Data Sheet PU10009EJ01V0DS 9 2SC5509 EQUAL NF CIRCLE VCE = 2 V IC = 10 mA f = 1 GHz Unstable Area NFmin = 0.95 dB Γopt 1.5 dB 2.0 dB 2.5 dB 3.0 dB 3.5 dB 4.0 dB VCE = 2 V IC = 10 mA f = 2 GHz NFmin = 1.1 dB Γopt 1.5 dB B 2.0 d dB 2.5 .0 dB dB B 3 3.5 .0 d 4 10 Data Sheet PU10009EJ01V0DS 2SC5509 NOISE PARAMETERS VCE = 2 V, IC = 5 mA f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 0.70 0.74 0.78 0.98 1.10 1.14 1.18 1.39 Ga (dB) 18.0 17.0 16.2 13.6 12.5 12.2 11.8 9.9 MAG. 0.17 0.18 0.20 0.32 0.40 0.43 0.46 0.56 Γopt ANG. 93.0 103.0 112.7 155.4 176.2 −177.8 −172.2 −151.8 0.11 0.11 0.11 0.09 0.07 0.06 0.06 0.08 Rn/50 VCE = 2 V, IC = 20 mA f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 1.12 1.15 1.18 1.31 1.38 1.41 1.43 1.56 Ga (dB) 20.7 19.7 18.8 15.7 14.4 14.0 13.6 11.5 MAG. 0.30 0.31 0.32 0.39 0.45 0.47 0.49 0.56 Γopt ANG. −164.8 −162.7 −160.7 −151.5 −146.3 −144.6 −142.9 −133.5 0.08 0.09 0.09 0.10 0.10 0.10 0.11 0.14 Rn/50 VCE = 2 V, IC = 10 mA f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 0.87 0.90 0.93 1.07 1.15 1.18 1.20 1.35 Ga (dB) 19.6 18.6 17.8 14.8 13.6 13.2 12.8 10.9 MAG. 0.13 0.15 0.17 0.30 0.39 0.41 0.44 0.53 Γopt ANG. 170.3 171.5 173.0 −174.1 −164.1 −160.6 −157.2 −142.3 0.09 0.09 0.09 0.08 0.07 0.07 0.07 0.10 Rn/50 VCE = 2 V, IC = 50 mA f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 1.75 1.78 1.80 1.92 2.00 2.02 2.04 2.17 Ga (dB) 21.3 20.3 19.4 16.2 14.8 14.4 13.9 11.8 MAG. 0.49 0.49 0.50 0.55 0.59 0.60 0.61 0.65 Γopt ANG. −159.4 −157.2 −154.9 −144.7 −139.1 −137.3 −135.5 −126.4 0.10 0.10 0.11 0.14 0.17 0.19 0.20 0.28 Rn/50 Data Sheet PU10009EJ01V0DS 11 2SC5509 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (UNIT: mm) 0.40+0.1 –0.05 2.05 ± 0.1 0.30+0.1 –0.05 0.65 4 0.30 +0.1 –0.05 1.25 ± 0.1 2 2.0 ± 0.1 0.60 3 T80 1.25 0.65 0.59 ± 0.05 0.30+0.1 –0.05 1 PIN CONNECTIONS 1. 2. 3. 4. Emitter Collector Emitter Base 12 Data Sheet PU10009EJ01V0DS 0.11+0.1 –0.05 0.65 1.30 2SC5509 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below, Time: 30 seconds or less (at 210°C or higher), Note Count: 2 times or less, Exposure limit: None Package peak temperature: 215°C or below, Time: 40 seconds or less (at 200°C or higher), Note Count: 2 times or less, Exposure limit: None Soldering bath temperature: 260°C or below, Time: 10 seconds or less, Note Count: 1 time, Exposure limit: None Recommended Condition Symbol IR30-00-2 For soldering VPS VP15-00-2 Wave Soldering WS60-00-1 Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E: published by NEC Corporation). Data Sheet PU10009EJ01V0DS 13 2SC5509 • The information in this document is current as of October, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 14 Data Sheet PU10009EJ01V0DS 2SC5509 Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918 0110