2SJ603-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg −60 V V A A W W °C °C A mJ (TO-262) m 20 m 25 m 70 50 1.5 150 −55 to +150 −25 62.5 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14648EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000, 2001 2SJ603 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = −48 V VGS = −10 V ID = −25 A IF = 25 A, VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 100 A / µs TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS = MIN. TYP. MAX. −10 UNIT µA µA V S m 20 V, VDS = 0 V −1.5 10 −2.0 21 38 53 1900 350 140 10 11 66 20 38 7 10 1.0 49 100 m 10 −2.5 VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −13 A VGS = −10 V, ID = −13 A VGS = −4.0 V, ID = −13 A VDS = −10 V VGS = 0 V f = 1 MHz VDD = −30 V, ID = −13 A VGS = −10 V RG = 0 Ω 48 75 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD BVDSS VDS 50 Ω L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (−) 90% 90% 10% 10% VGS (−) VGS Wave Form 0 10% VGS 90% IAS VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = −2 mA 50 Ω RL VDD PG. 2 Data Sheet D14648EJ3V0DS 2SJ603 TYPICAL CHARACTERISTICS (TA = 25°C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 60 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 100 80 60 40 20 0 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA –100 ID(pulse) 10 0 PW = 10 ID - Drain Current - A –10 R DS (o n) Lim it ed ID(DC) 1 P Li owe m r DC ite D d iss ip at µs µs m 10 io n s m s –1 –0.1 –0.1 TC = 25˚C Single Pulse –1 –10 –100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(j-A) = 83.3˚C/W 10 Rth(j-C) = 2.5˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14648EJ3V0DS 3 2SJ603 FORWARD TRANSFER CHARACTERISTICS –100 –80 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A ID - Drain Current - A –10 –60 VGS = –10 V –1 TA = −55˚C 25˚C 75˚C 125˚C –40 –4.5 V –4.0 V –0.1 VDS = –10 V Pulsed –2 –3 –4 –5 VGS - Gate to Source Voltage - V –20 Pulsed 0 0 –1 –2 –3 –4 –5 –0.01 –1 VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed | yfs | - Forward Transfer Admittance - S 100 80 ID = –25 A –13 A –5 A 10 TA = 125˚C 75˚C 25˚C −55˚C 60 1 40 0.1 VDS = –10 V Pulsed –0.1 –10 –100 –1 ID - Drain Current - A 20 0.01 –0.01 0 0 –5 –10 –15 –20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 100 80 60 40 20 0 –0.1 VGS = –4.0 V –4.5 V –10 V Pulsed –4.0 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = –10 V ID = –1 mA VGS(off) - Gate Cut-off Voltage - V –100 –3.0 –2.0 –1.0 –1 –10 0 –50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - ˚C 4 Data Sheet D14648EJ3V0DS 2SJ603 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE –100 Pulsed VGS = –10 V –10 –4.0 V –1 0V 80 VGS = –4.0 V 60 –10 V 40 –4.5V ISD - Diode Forward Current - A 20 ID = –13 A −50 0 50 100 150 –0.1 0 –0.01 0 –0.5 –1.0 –1.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 Ciss 1000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz Ciss, Coss, Crss - Capacitance - pF VDD = –30 V VGS = –10 V RG = 0 Ω td(off) tf 100 Coss 100 Crss 10 tr td(on) 10 –0.1 –1 –10 –100 1 –0.1 –1 –10 –100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 di/dt = 100 A/ µs VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS –60 –12 ID = –25 A –10 VDD = –48 V –30 V –12 V VGS –8 –6 –4 –2 0 40 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns –50 –40 –30 –20 –10 0 0 100 10 VDS 5 10 15 20 25 30 35 1 0.1 1 10 100 IF - Drain Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V Data Sheet D14648EJ3V0DS 5 2SJ603 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 160 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = –30 V RG = 25 Ω VGS = –20 → 0 V IAS ≤ –25 A IAS - Single Avalanche Current - A EAS Energy Derating Factor - % 10 m IAS = –25 A 10 =6 2.5 140 120 100 80 60 40 20 1m 0 25 mJ 1 VDD = –30 V RG = 25 Ω VGS = –20 → 0 V 100 µ 0.1 10 µ 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C 6 Data Sheet D14648EJ3V0DS 2SJ603 5 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 3.0±0.3 10.6 MAX. 10.0 TYP. 4.8 MAX. 2) TO-262 (MP-25 Fin Cut) 1.0±0.5 φ 3.6±0.2 5.9 MIN. 4.8 MAX. 1.3±0.2 1.3±0.2 10 TYP. 15.5 MAX. 4 1 2 3 4 123 6.0 MAX. 1.3±0.2 1.3±0.2 12.7 MIN. 12.7 MIN. 8.5±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) 10 TYP. 4 4.8 MAX. 1.3±0.2 4) TO-220SMD (MP-25Z) 10 TYP. 4 Note 4.8 MAX. 1.3±0.2 1.0±0.5 8.5±0.2 1.0±0.5 1 1.4±0.2 0.7±0.2 2.54 TYP. 2 3 1 TY P. T . YP 2 3 1.1±0.4 5.7±0.4 3.0±0.5 8.5±0.2 1.4±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0 .5R 2.54 TYP. 0.8 R .8 2.54 TYP. 0 0 .5R TY R P. P. TY 0.5±0.2 2.8±0.2 Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Gate Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D14648EJ3V0DS 7 2SJ603 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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