2SK2483

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2483 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % G VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS = 25 Ω, VGS = 20 V → 0 ± 30 ± 3.5 ± 10.5 40 2.0 150 3.5 147 V A A W W ˚C A mJ 123 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. VDSS 900 V 12.0±0.2 • Low Ciss Ciss = 1 200 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C ** Starting Tch = 25 ˚C, R MP-45F (ISOLATED TO-220) Drain Body Diode Gate Source Document No. D10275EJ1V0DS00 (1st edition) Date Published September 1995 P Printed in Japan © 1995 2SK2483 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on) VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1 200 170 30 20 10 70 15 40 7 17 0.9 580 3.0 2.5 1.0 100 ± 100 MIN. TYP. MAX. 2.8 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 75 Ω ID = 3.5 A VDD = 450 V VGS = 10 V IF = 3.5 A, VGS = 0 IF = 3.5 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID D Wave Form BVDSS IAS ID VDD VDS VGS 0 t t = 1us Duty Cycle ≤ 1 % I 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2483 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 80 60 40 20 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 10 ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A PW ID(pulse) 10 n) = 10 0 R DS (o Lim it ed µs 1 ID(DC) Po we rD 1 m iss ip 1 10 0 m s 0 m s at io n Li m s 5 VGS = 20 V 10 V 8V 6V 0.1 TC = 25 ˚C Single Pulse 1 10 ite d 100 1000 0 4 8 12 16 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C Pulsed ID - Drain Current - A 10 1.0 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2483 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W 100 10 Rth(ch-c)=3.125(˚C/W) 1 0.1 0.01 0.001 10 µ Single Pulse Tc = 25 ˚C 100 µ 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s | yfs | - Forward Transfer Admittance - S 100 RDS(on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 7 6 5 4 3 2 1 0 2 4 6 8 10 12 14 ID = 6 A 3A 2A 1.5 A Pulsed 10 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 0.1 0.01 0.1 1.0 10 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 7 6 5 4 3 2 1 0 0.1 1.0 ID - Drain Current - A Pulsed VGS = 10 V 3 2 –50 0 50 100 150 10 Tch - Channel Temperature - ˚C 4 2SK2483 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 100 RDS(on) - Drain to Source On-State Resistance - Ω SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 4 ID = 3 A 2A 10 3 2 1 VGS = 10 V 1 –50 0 50 100 VGS = 10 V Pulsed 150 0.1 0 0.5 VGS = 0 V 1.0 1.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss tr 100 tf td(off) td(on) 10 1 000 100 Coss Crss 10 0.1 1 10 100 1.0 0.1 1.0 VDD = 150 V VGS = 10 V RG = 10 Ω 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 trr - Reverse Recovery time - ns VGS - Gate to Source Voltage - V di/dt = 50 A/µ s VGS = 0 ID = 3.5 A 14 12 10 8 6 4 2 0 10 20 30 40 VDD = 450 V 300 V 150 V 1 000 100 10 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Charge - nC 5 2SK2483 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 160 SINGLE AVALANCHE ENERGY DERATING FACTOR 140 120 100 80 60 40 20 IAS - Single Avalanche Current - A 10 IAS = 3.5 A EAS =1 47 mJ 1.0 VDD = 150 V VGS = 20 V → 0 RG = 25 Ω 100 µ 1m Energy Derating Factor - % VDD = 150 V RG = 25 Ω VGS = 20 V → 0 IAS ≤ 3.5 A 10m 100 m 0 25 50 75 100 125 150 175 L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C 6 2SK2483 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 7 2SK2483 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8