2SK3576

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3576 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 3 FEATURES • 2.5V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) 1.5 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER 2SK3576 PACKAGE SC-96 (Mini Mold Thin Type) 1 : Gate 2 : Source 3 : Drain Marking: XK ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT VDSS VGSS ID(DC) 20 ±12 ±4.0 ±16 0.2 1.25 150 –55 to +150 V V A A W W °C °C Gate Body Diode Drain ID(pulse) PT1 Note2 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. PT2 Tch Tstg Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15939EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 2SK3576 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 16 V VGS = 4.0 V ID = 4.0 A IF = 4.0 A, VGS = 0 V TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 2.0 A VGS = 4.0 V, ID = 2.0 A VGS = 2.5 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 2.0 A VGS = 4.0 V RG = 10 Ω 0.5 1.0 40 42 56 250 80 60 28 140 110 180 3.3 0.7 1.5 0.89 50 53 75 MIN. TYP. MAX. 10 ±10 1.5 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% VGS 90% IG = 2 mA 50 Ω RL VDD VDD PG. 90% VDS 90% 10% 10% VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet D15939EJ1V0DS 2SK3576 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 1.5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 80 PT - Total Power Dissipation - W 100 1.25 1 60 0.75 40 0.5 20 0.25 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 R DS(on) L im ited (V GS = 4 .5 V) ID(pulse) 10 TA - Ambient Temperature - °C ID - Drain Current - A I D(DC) PW = 1 m s 1 10 m s 0.1 Single Pulse Mounted on FR-4 board of 50 m m × 50 m m × 1.6 m m 0.01 0.1 1 10 100 100 m s 5s VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W Single Pulse W ithout board 100 Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15939EJ1V0DS 3 2SK3576 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 16 V GS = 4.5 V 4.0 V 10 1 100 V DS = 10 V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 12 ID - Drain Current - A 0.1 0.01 0.001 0.0001 8 2.5 V T A = 1 25 ° C 75°C 25°C − 25°C 4 0 0.0 0.2 0.4 0.6 0.8 1.0 0.00001 0 1 2 3 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.5 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V DS = 1 0 V VGS(off) – Gate Cut-off Voltage - V V DS = 1 0 V ID = 1 m A | yfs | - Forward Transfer Admittance - S 10 1 1 T A = 1 25 ° C 75°C 25°C − 25°C 0.1 0.5 -50 0 50 100 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATERESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ ID = 2 .0 A 90 80 70 4 .0 V 60 50 4 .5 V 40 30 20 -50 0 50 100 150 V GS = 2 .5 V ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 100 90 80 70 60 50 40 30 20 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V ID = 2 .0 A 100 Tch - Channel Temperature - °C 4 Data Sheet D15939EJ1V0DS 2SK3576 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ V GS = 2.5 V Pulsed T A = 125°C 75°C 25°C − 25°C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 80 V GS = 4 .0 V Pulsed 70 60 50 2 5 °C 40 30 20 0.01 − 25 ° C T A = 1 25 °C 7 5 °C 90 80 70 60 50 40 30 0.01 0.1 1 10 100 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 80 70 60 50 40 30 20 0.01 V GS = 4 .5 V Pulsed ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 V GS = 0 V f = 1 MHz Ciss, Coss, Crss - Capacitance - pF T A = 1 25 °C 7 5° C 2 5° C − 25 °C C iss 100 C oss C rss 10 0.1 1 10 100 0.1 1 10 100 ID - Drain Current - A SWITCHING CHARACTERISTICS 1000 V DD = 1 0 V V GS = 4 .0 V R G = 10 Ω VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed td(on), tr, td(off), tf - Switching Time - ns tr tf ISD - Diode Forward Current - A 10 V GS = 0 V 1 100 td(off) td(on) 0.1 10 0.1 1 10 0.01 0.4 0.6 0.8 1.0 1.2 1.4 ID - Drain Current - A VSD - Source to Drain Voltage - V Data Sheet D15939EJ1V0DS 5 2SK3576 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 5 ID = 10 A VGS - Gate to Source Voltage - V 4 VDD = 16 V 10 V 3 2 1 0 0 1 2 3 4 5 QG - Gate Charge - nC 6 Data Sheet D15939EJ1V0DS 2SK3576 [MEMO] Data Sheet D15939EJ1V0DS 7 2SK3576 • The information in this document is current as of May, 2002. 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