2SK3668

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high voltage applications such as high intensity discharge lamp drive. ORDERING INFORMATION PART NUMBER 2SK3668-ZK PACKAGE TO-263 (MP-25ZK) (TO-263) FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.55 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 400 ±30 ±10 ±34 1.5 100 150 –55 to +150 10 8 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current 5 Single Avalanche Energy Note2 Note2 IAS EAS 5 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistane Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16547EJ2V0DS00 (2nd edition) Date Published April 2003 NS CP(K) Printed in Japan The mark 5 shows major revised points. 2002 2SK3668 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage SYMBOL IDSS IGSS VGS(off) Note TEST CONDITIONS VDS = 400 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 150 V, ID = 5.0 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 100 ±100 UNIT µA nA V S 2.5 3.0 5.6 0.40 1320 230 13 18 8 44 4 3.5 5 Forward Transfer Admittance | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Note 5 Drain to Source On-state Resistance 0.55 Ω pF pF pF ns ns ns ns nC nC nC V ns Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note VDD = 320 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A/µs 26 7 11 0.90 350 2.7 VF(S-D) trr Qrr µC Note Pulsed: PW ≤ 800 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% ID Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS VGS Wave Form 50 Ω RG 0 10% VGS 90% VDD ID 90% 90% IAS ID VDD ID 0 10% 10% td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet D16547EJ2V0DS 2SK3668 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 100 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C 5 FORWARD BIAS SAFE OPERATING AREA 100 PW = 1 ms ID - Drain Current - A ID(DC) = 10 A 10 RDS(on) Limited (at VGS = 10 V) DC 1 10 ms 100 ms Power Dissipation Limited 0.1 TC = 25°C Single pulse 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V 5 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(t) - Transient Thermal Resistance - °C/W 10 Rth(ch-A) = 83.3°C/W 1 Rth(ch-C) = 1.25°C/W 0.1 0.01 Single pulse Rth(ch-A): TA = 25°C Rth(ch-C): TC = 25°C 0.001 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet D16547EJ2V0DS 3 2SK3668 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 35 VGS = 20 V FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10 V Pulsed 10 ID - Drain Current - A 30 10 V 25 20 15 10 5 Pulsed 0 0 5 10 15 20 25 30 ID - Drain Current - A 1 T A = 150°C 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 0 5 10 15 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed TA = 150°C 125°C 75°C 25°C −25°C VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 3.5 10 3.0 1 2.5 0.1 2.0 1.5 - 25 0 25 50 75 100 125 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 VGS = 10 V Pulsed 1.5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 0.9 0.8 ID = 10 A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 5.0 A 2.0 A Pulsed 1 0.5 0 0.01 0.1 1 10 100 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet D16547EJ2V0DS 2SK3668 RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.4 1.2 1 ID = 10 A 0.8 0.6 0.4 0.2 0 - 25 5.0 A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 10 V Pulsed Ciss 1000 100 Coss 10 VGS = 0 f = 1.0 MHz Crss 0 25 50 75 100 125 150 1 0.01 0.1 1 10 100 1000 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 16 ID = 10 A 350 300 250 200 150 100 50 0 VDS VGS VDD = 320 V 200 V 100 V 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 t d(o ff) tf t d(o n) 10 tr 1 0 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns Pulsed IF - Diode Forward Current - A 10 100 VGS = 10 V 1 0V 10 0.1 di/dt = 100 A/µs VGS = 0 V 1 0.1 1 10 100 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D16547EJ2V0DS 5 VGS - Gate to Source Voltage - V V D D = 1 50 V V GS = 10 V R G = 10 Ω 2SK3668 5 100 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 VDD = 150 V VGS = 20 → 0 V RG = 25 Ω IAS = 10 A SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 150 V RG = 25 Ω VGS = 20 → 0V IAS ≤ 10 A IAS - Single Avalanche Current - A Energy Derating Factor - % 80 10 EAS = 8.0 mJ 60 40 1 20 0.1 0 100 µ 1m 10 m 100 m 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - °C 6 Data Sheet D16547EJ2V0DS 2SK3668 PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZK) 10.0±0.3 No plating 7.88 MIN. 4 1.35±0.3 4.45±0.2 1.3±0.2 8.0 TYP. 9.15±0.3 15.25±0.5 0.025 to 0.25 0.5± 0.75±0.2 2.54 1 2 3 0.2 8o 0 to 0.25 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 2.54±0.25 Data Sheet D16547EJ2V0DS 7 2SK3668 • The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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