2SK3993

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3993 2SK3993-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 32 A) • Low Ciss: Ciss = 4770 pF TYP. • 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±64 ±256 40 1.0 150 −55 to +150 41 168 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17322EJ1V0DS00 (1st edition) Date Published February 2005 NS CP(K) Printed in Japan 2004 2SK3993 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 16 A VGS = 10 V, ID = 32 A VGS = 5.0 V, ID = 16 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.5 V, ID = 32 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±100 UNIT µA nA V S 2.0 15 2.4 3.0 Drain to Source On-state Resistance 2.7 4.1 4770 1000 690 27 38 107 54 3.8 7.8 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 20 V VGS = 10 V ID = 6 4 A IF = 64 A, VGS = 0 V IF = 64 A, VGS = 0 V di/dt = 100 A/µs 88 16 30 0.91 43 52 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D17322EJ1V0DS 2SK3993 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 PT - Total Power Dissipation - W 45 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 100 80 60 40 20 0 TC - Case Temperature - °C 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(DC) = 64 A ID(pulse) = 256 A PW = 100 µs ID - Drain Current - A 100 RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited 10 1 ms 10 ms 1 TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 3.13°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet D17322EJ1V0DS 3 2SK3993 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 250 ID - Drain Current - A 1000 VGS = 10 V ID - Drain Current - A 100 10 1 0.1 200 150 100 50 Pulsed 0 0 0.5 VDS - Drain to Source Voltage - V 5.0 V Tch = 150°C 125°C 75°C 25°C −25°C −55°C VDS = 10 V Pulsed 0 1 2 3 4 5 6 0.01 1 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 4 VGS(off) - Gate Cut-off Voltage - V 100 VDS = 10 V ID = 1 m A 3 10 2 75°C 125°C 150°C Tch = −55°C −25°C 25°C VDS = 10 V Pulsed 1 1 0 -100 0.1 0.1 1 10 100 ID - Drain Current - A -50 0 50 100 150 200 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 8 6 4 2 Pulsed 0 1 10 100 1000 ID - Drain Current - A 15 Pulsed VGS = 5.0 V 10 10 V 5 ID = 32 A 0 0 5 10 15 20 VGS - Gate to Source Voltage - V 4 Data Sheet D17322EJ1V0DS 2SK3993 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 8 VGS = 5.0 V 6 4 2 0 -100 1000 Coss Crss VGS = 0 V f = 1 MHz 100 0.01 0.1 1 10 100 10 V ID = 32 A Pulsed -50 0 50 100 150 200 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 30 VDD = 12.5 V VGS = 10 V RG = 10 Ω td(off) 12 10 8 6 4 2 VDS 25 20 15 10 5 0 VDD = 20 V 12.5 V 5.0 V 100 tf VGS 10 0.1 1 10 ID - Drain Current - A tr td(on) 100 0 20 40 60 80 0 100 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 1000 VGS = 10 V di/dt = 100 A/µs VGS = 0 V 100 IF - Diode Forward Current - A 0V 10 1 1 10 IF - Diode Forward Current - A 100 Data Sheet D17322EJ1V0DS 5 VGS - Gate to Source Voltage - V ID = 6 4 A (VDD = 5.0 V at ID = 56 A) 2SK3993 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 IAS = 41 A 100 80 60 40 20 0 EAS = 168 mJ 10 VDD = 12.5 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 0.01 0.1 1 10 VDD = 12.5 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 41 A 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - °C 6 Data Sheet D17322EJ1V0DS 2SK3993 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) Mold Area 0.7 TYP. 2) TO-252 (MP-3ZK) 2.3 ±0.1 0.5 ±0.1 6.6 ±0.2 5.3 TYP. 4.3 MIN. 4 4.0 MIN. 6.1 ±0.2 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 4 2.3±0.1 0.5±0.1 No Plating 1 2 3 1.8 ±0.2 6.1±0.2 10.4 MAX. (9.8 TYP.) 16.1 TYP. 4.0 MIN. 9.3 TYP. 1.14 MAX. No Plating 1 2 3 0.8 No Plating 0 to 0.25 0.5±0.1 1.0 1.14 MAX. 0.76 ±0.1 2.3 TYP. 2.3 TYP. 1.02 TYP. 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.5 ±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 0.51 MIN. Data Sheet D17322EJ1V0DS 7 2SK3993 • T he information in this document is current as of February, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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