CE2A3Q

DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES • On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 60 60 15 ±2.0 ±3.0 0.03 1.0 150 −55 to +150 Unit V V V A A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16179EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 CE2A3Q ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance 1 Input resistance 2 Turn-on time Storage time Fall time Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 ton tstg tf IC = 1.0 A IBI = −IB2 = 10 mA VCC = 20 V, RL = 20 Ω Conditions VCB = 50 V, IE = 0 VCE = 50 V, IC = 0.2 A VCE = 5.0 V, IC = 1.0 A VCE = 5.0 V, IC = 2.0 A VI = 5.0 V, IC = 0.5 A VCE = 12 V, IC = 100 µA 0.7 7.0 700 1000 500 1300 1700 1300 0.12 0.46 1.0 10.0 0.4 1.4 0.5 0.3 0.4 1.3 13.0 3000 MIN. TYP. MAX. 100 Unit nA − − − V V kΩ kΩ µs µs µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % TYPICAL CHARACTERISTICS (Ta = 25°C) 2 Data Sheet D16179EJ2V0DS CE2A3Q RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC sales representative. Data Sheet D16179EJ2V0DS 3 CE2A3Q • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4