K2141

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES 10.0 ± 0.3 • • • • φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A) 15.0 ± 0.3 LOW Ciss Ciss = 1150 pF TYP. 3 ± 0.1 123 4 ± 0.2 High Avalanche Capability Ratings Isolated TO-220 (MP-45F) Package Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 600 ± 30 ± 6.0 ± 24 35 2.0 –55 to +150 150 6.0 12 V V A A W W °C °C A mJ 123 2.54 TYP. 0.7 ± 0.1 13.5 MIN. 0.65 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy *PW ≤ 10 µs, Duty Cycle ≤ 1% **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 1.3 ± 0.2 1.5 ± 0.2 2.54 TYP. 12.0 ± 0.2 2.5 ± 0.1 Tstg Tch IAS** EAS** 1. Gate 2. Drain 3. Source ISOLATED TO-220 (MP-45F) Drain (D) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source (S) Body diode Gate (G) Document No. TC-2514 (O.D. No. TC–8073) Date Published January 1995 P Printed in Japan © 1995 2SK2141 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off)  yfs  IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1150 260 60 15 15 75 13 40 6.0 20 1.0 370 1.5 2.5 2.0 100 ± 100 MIN. TYP. 0.8 MAX. 1.1 3.5 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 3.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VDS = 600V, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 3.0 A, RG = 10 Ω RL = 37.5 Ω VGS = 10 V ID = 6.0 A VDD = 480 V IF = 6.0 A, VGS = 0 IF = 6.0 A di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1: Avalanche Capability D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω Test Circuit 2: Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VDD VGS Wave Form VGS 0 10 % VGS (on) 90 % ID 90 % 90 % ID 0 10 % td(on) ton tr td (off) toff 10 % tf BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% ID Wave Form Starting Tch Test Circuit 3: Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2141 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 80 60 60 40 40 20 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse) = 10 TC - Case Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12 10 10 ID - Drain Current - A 10 V 12 V 8V Pulsed ID - Drain Current - A 10 DS d ite ) Lim 20 V n) (o = GS PW 1 m 1 s 20 0 m 0m s s 0 8 6 4 VGS = 6 V 2 R tV (a ID (DC) Po w er s µ s µ 1.0 Di ss ip at io n 0.1 1.0 TC = 25 °C Single Pulse 10 Li m ite d 100 1 000 0 4 8 12 16 20 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 VDS - Drain to Source Voltage - V ID - Drain Current - A 50 Tch = 125 °C 75 °C 25 °C –25 °C 10 5.0 1.0 0 5 VDS = 10 V Pulsed 10 VGS - Gate to Source Voltage - V 3 2SK2141 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1.0 0.1 0.01 TC = 25 °C Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 Rth (ch-a) = 62.5 °C/W rth (t) - Transient Thermal Resistance - °C/W Rth (ch-c) = 3.57 °C/W PW - Pulse Width - s 10 Tch = –25 °C 25 °C 75 °C 125 °C 1.0 RDS (on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 2.0 ID = 6.0 A 3.0 A 1.2 A 1.0 yfs - Forward Transfer Admittance - S 0.1 0.1 VDS = 10 V Pulsed 1.0 ID - Drain Current - A 10 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 RDS (on) - Drain to Source On-State Resistance - Ω 2.0 Pulsed VGS (off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.6 VGS = 10 V 20 V 4.0 1.2 3.0 0.8 2.0 0.4 1.0 VDS = 10 V ID = 1 mA 0 – 50 0 50 100 150 0 1.0 10 ID - Drain Current - A 100 Tch - Channel Temperature - °C 4 2SK2141 RDS (on) - Drain to Source On-State Resistance - Ω ISD - Diode Forward Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3.0 VGS = 10 V Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE 50 10 VGS = 10 V 1.0 VGS = 0 V 2.0 ID = 6 A 3A 1.0 0.1 0.01 Pulsed 0 –50 0 50 100 150 0 0.5 1.0 1.5 Tch - Channel Temperature - °C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td (on), tr, td (off), tf - Switching Time - ns VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1 000 tr 100 tf td (off) td (on) 10 10 000 Ciss, Coss, Crss - Capacitance - pF 1 000 Ciss 100 Crss TC = 25 °C Single Pulse 10 Coss 10 1.0 100 1 000 VDD = 150 V VGS = 10 V RG = 10 Ω 1.0 1.0 10 ID - Drain Current - A 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS 800 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 16 VGS - Gate to Source Voltage - V 800 trr - Reverse Recovery Time - ns ID = ID (DC) 14 600 VDD = 450 V 300 V 120 V VGS 12 10 8 6 200 VDS 4 2 40 60 0 80 di/dt = 50 A/µ s VGS = 10 V 600 400 400 200 0 20 0 0.1 1.0 10 100 Qg - Gate Charge - nC Diode Forward Current - A 5 2SK2141 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 50 EAS - Single Avalanche Energy - mJ IAS - Single Avalanche Current - A SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 14 12 10 8 6 4 2 0 25 50 75 100 125 150 ID (peak = ID (DC) VDD = 150 V 10 IAS = 6.0 A EA S =1 2m J RG = 25 Ω 1.0 VDD = 150 V VGS = 20 V → 0 Starting Tch 0.5 100 µ 10 µ 1m 10 m L - Inductance - H Starting Tch-Starting Channel Temperature - °C 6 2SK2141 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 7 2SK2141 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11