NE32984D

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz Noise Figure, NF (dB) 1.2 NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 1.0 GA 0.8 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE 18 0.6 15 DESCRIPTION The NE32984D is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0.4 NF 0.2 12 9 0 2 4 6 8 10 20 30 6 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF1 GA 1 IDSS VP gm IGSO RTH (CH-A) RTH (CH-C) PARAMETERS AND CONDITIONS Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V,VGS = 0 V Pinch-off Voltage, VDS = 2 V, IDS = 100 µA Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3 V Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case) UNITS dB dB mA V mS µA °C/W °C/W 11.0 20 -2.0 45 MIN NE32984D 84D TYP 0.40 12.5 60 -0.7 60 0.5 750 350 10.0 90 -0.2 MAX 0.50 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories Associated Gain, GA (dB) NE32984D ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS IDS IGRF TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA µA °C °C mW RATINGS 4.0 -3.0 IDSS 100 150 -65 to +150 165 NOISE PARAMETERS VDS = 2 V, ID = 10 mA FREQ. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFMIN. (dB) 0.29 0.30 0.31 0.34 0.37 0.40 0.49 0.63 0.81 GA (dB) 20.0 18.3 16.5 15.0 13.6 12.5 12.0 11.8 11.5 MAG 0.85 0.75 0.68 0.61 0.56 0.52 0.47 0.40 0.31 Γopt ANG 20 41 63 86 111 137 164 -168 -139 Rn/50 0.30 0.28 0.20 0.13 0.09 0.05 0.04 0.04 0.07 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 200 Total Power Dissipation, PT (mW) 80 150 Drain Current, ID (mA) VGS = 0 V 60 -0.2 V 40 -0.4 V 20 100 50 -0.6 V -0.8 V 0 50 100 150 200 0 1.5 3.0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) MAXIMUM STABLE GAIN AND FORWARD INSERTION GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA 20 MSG NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHZ GA 14 13 Maximum Stable Gain, MSG (db) Forward Insertion Gain, IS21S I2 (db) 12 2.0 1.5 1.0 0.5 NF 11 10 16 IS21SI 2 12 8 4 1 2 4 6 8 10 14 20 30 0 10 20 30 Frequency, f (GHz) Drain Current, ID (mA) Associated Gain, GA (dB) Noise Figure, NF (dB) NE32984D TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE32984D VDS = 2 V, ID = 10 mA FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 MAG .984 .960 .919 .868 .816 .786 .759 .736 .689 .659 .621 .590 .554 .522 .491 .461 .452 S11 ANG -26.4 -39.3 -52.8 -64.5 -75.5 -85.7 -95.9 -106.3 -116.2 -125.6 -135.5 -146.3 -157.9 -171.0 173.0 153.2 129.4 MAG 4.583 4.480 4.332 4.141 3.923 3.786 3.659 3.547 3.375 3.264 3.217 3.186 3.172 3.180 3.220 3.303 3.367 S21 ANG 146.9 130.6 114.3 98.8 84.4 70.8 57.1 43.1 30.1 17.5 4.9 -8.0 -21.3 -35.2 -49.9 -65.6 -83.4 MAG .029 .041 .050 .057 .060 .064 .066 .068 .071 .074 .079 .085 .093 .104 .114 .124 .137 S12 ANG 66.4 55.9 47.9 38.5 31.2 26.0 21.7 18.2 16.0 13.2 11.4 7.3 2.0 -5.5 -12.6 -23.3 -36.4 MAG .549 .520 .481 .447 .418 .396 .382 .374 .368 .370 .374 .391 .406 .417 .432 .445 .453 S22 ANG -32.0 -47.8 -64.5 -81.9 -99.8 -116.7 -132.6 -147.8 -163.0 -178.3 167.4 155.0 143.2 132.1 119.7 106.3 91.0 .13 .22 .31 .45 .58 .63 .69 .75 .86 .91 .94 .92 .91 .86 .82 .78 .72 K MAG1 (dB) 22.0 20.4 19.4 18.6 18.2 17.7 17.4 17.2 16.8 16.4 16.1 15.7 15.3 14.9 14.5 14.3 13.9 Note: 1. Gain calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE32984D OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84D 1.78 ± 0.2 S 1.78 ± 0.2 D L S G 0.5 ± 0.1 (ALL LEADS) 1.0 MIN ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. ORDERING INFORMATION PART NUMBER NE32984D-S NE32984D-T1 NE32984D-SL AVAILABILITY Bulk up to 1K 1K/Reel Bulk up to 1K LEAD LENGTH 1.0 mm 1.0 mm 1.7 mm PACKAGE OUTLINE 84D 84D 84D-SL EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER - 1/96 DATA SUBJECT TO CHANGE WITHOUT NOTICE