NE8500295-4

2 WATT C-BAND POWER GaAs MESFET FEATURES • CLASS A OPERATION • HIGH EFFICIENCY: ηADD ≥ 39% TYP • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip Hermetic Package • PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES • PROVEN RELIABILITY NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 PART NUMBER NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE (dBm) (GHz) (dB) POUT 33.8 MIN 33.8 MIN 33.8 MIN 33.5 MIN 2.0 to 10 3.5 to 4.5 5.5 to 6.5 7.5 to 8.5 8.0 MIN 10.5 MIN 9.5 MIN 8.0 MIN DESCRIPTION The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz frequency range with three different Class A, 2 W partially matched devices. Each packaged device has an input lumped element matching network. The NE8500200 is the six-cell recessed gate chip used in the "95" package. The device incorporates a Ti-Al gate structure, SiO2 glassivation and plated heat sink technology. ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS IDSS VP gm BVGDO IGS RTH PTEST2 NE85002001 00 (CHIP) NE8500295-4 95 NE8500295-6 95 NE8500295-8 95 TYP MAX 1900 -1.0 600 18 2.4 15 -2.4 2.4 15 PARAMETERS AND CONDITIONS UNITS MIN Saturated Drain Current VDS = 2.5 V, VGS = 0 V Pinch-off Voltage VDS = 2.5 V, ID = 8 mA Transconductance VDS = 2.5 V, ID = IDSS Drain-Gate Breakdown Voltage IGD = 8 mA Gate to Source Current, VDS = 10 V, IDSQ = 450 mA, POUT = PTEST Power Output at Test Point VDS = 10 V, IDS = 450 mA set PIN = 27.0 dBm PIN = 24.5 dBm PIN = 25.5 dBm Linear Gain VDS = 10 V, IDS = 450 mA Power Added Efficiency at PTEST mA V mS V mA 18 -2.4 950 -3.0 TYP MAX MIN 1900 -1.0 600 18 2.4 10 15 -2.4 950 -3.0 TYP MAX MIN 1900 -1.0 600 18 2.4 15 -2.4 950 -3.0 TYP MAX MIN 1900 -1.0 600 950 -3.0 Thermal Resistance (Channel-to-Case) °C/W dBm dBm dBm 33.8 33.8 33.8 33.5 GL ηADD3 dB % 8.0 9.0 42 10.5 47 9.5 45 8.0 39 Notes: 1. Six-cell chip: all cells are used. RF performance of the chip is determined by packaging 10 chips per wafer. Wafer rejection criteria for standard devices are 2 rejects per 10 samples. 2. This is a production test. Test frequencies are: -4 @ 4.2 GHz, -6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz. POUT - PIN 3. ηADD = VDS - ID x 100% California Eastern Laboratories NE85002 SERIES ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOLS VDS VGD VGS ID IG TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Drain Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total power Dissipation UNITS V V V A mA °C °C W RATINGS 15 -18 -12 2.5 13 175 -65 to +175 13 RECOMMENDED OPERATING CONDITIONS SYMBOLS VDS TC GCOMP Rg PARAMETERS Drain to Source Voltage Channel Temperature Input Power Gate Resistance UNITS V °C dBCOMP kΩ 1 MIN 9 TYP MAX 10 130 3 2 NE8500295-6 LARGE SIGNAL IMPEDANCES FREQUENCY GHz 5.90 6.20 6.40 6.50 ZIN Ω 13.16 - j44.75 22.77 - j59.68 149.70 - j73.98 43.58 - j56.13 ZOUT Ω 11.48 - j21.52 16.16 - j25.02 23.44 - j40.36 12.87 - j11.86 ZIN is the impedance of the input matching circuit as seen by the gate. ZOUT is the impedance of the output matching circuit as seen by the drain. TYPICAL PERFORMANCE CURVE (TC = 25°C) POWER DERATING CURVE 12 OUTPUT POWER vs. INPUT POWER 40 Total Power Dissipation, PT (W) Output Power, POUT (dBm) 30 -4 -6 -8 20 8 4 10 0 0 50 100 150 200 0 0 5 10 15 20 25 30 35 40 Case Temperature, TC (°C) Input Power, PIN (dBm) NE85002 SERIES TYPICAL SCATTERING PARAMETERS (TC = 25°C) +90˚ +120˚ +60˚ S22 10 GHz +150˚ S21 0.1 GHz +30˚ ±180˚ S21 10 GHz S12 0.1 GHz 0˚ S22 0.1 GHz -150˚ -30˚ S11 10 GHz S12 10 GHz -60˚ -90˚ S11 0.1 GHz -120˚ NE8500295-4 VDS = 10 V, IDS = 450 mA FREQUENCY (GHz) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 MAG 1.003 0.971 0.972 0.987 0.976 0.965 0.927 0.886 0.843 0.882 0.929 0.945 0.937 0.929 0.919 0.905 0.883 0.843 0.779 0.723 0.683 S11 ANG -81.900 -161.600 -179.600 169.800 160.100 150.700 145.700 139.600 134.633 129.600 118.200 106.500 96.800 87.900 76.700 60.100 34.100 0.700 -29.300 -59.300 -97.000 MAG S21 ANG MAG 0.009 0.010 0.012 0.013 0.017 0.018 0.018 0.020 0.014 0.021 0.037 0.047 0.054 0.058 0.069 0.086 0.117 0.142 0.141 0.133 0.114 14.230 135.700 3.768 90.400 2.006 69.100 1.479 51.400 1.255 34.300 1.205 15.900 1.149 -2.500 1.343 -30.300 1.486 -73.367 1.233 -126.500 0.738 -166.200 0.455 166.100 0.303 143.700 0.227 124.600 0.190 104.500 0.186 80.200 0.187 47.000 0.174 8.700 0.144 -26.400 0.124 -51.800 0.116 -74.600 S12 ANG -14.900 26.000 19.700 27.200 27.600 18.300 20.200 11.800 20.367 76.600 54.400 38.400 25.900 15.100 7.600 0.300 -18.200 -44.800 -74.800 -95.500 -110.500 MAG 0.428 0.414 0.429 0.457 0.479 0.514 0.588 0.700 0.864 0.931 0.838 0.785 0.769 0.763 0.756 0.725 0.676 0.629 0.623 0.647 0.661 S22 ANG -158.600 -173.100 -178.200 -178.700 179.500 177.400 -176.700 -176.000 173.900 153.400 137.500 127.500 121.100 116.400 112.300 107.100 96.600 80.500 66.100 55.900 52.500 -0.384 0.655 0.923 0.521 0.804 0.976 1.876 1.464 1.049 -0.147 -0.011 0.325 1.053 1.876 2.389 2.654 2.868 3.794 6.295 8.799 11.714 K MAG1 (dB) 31.990 25.761 22.231 20.560 18.682 18.257 12.657 14.232 18.899 17.687 12.999 9.859 6.087 0.532 -2.190 -3.736 -5.411 -7.842 -10.881 -12.745 -13.614 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE85002 SERIES TYPICAL SCATTERING PARAMETERS (TC = 25°C) +90˚ +120˚ +60˚ +30˚ S22 10 GHz +150˚ S21 0.1 GHz S21 10 GHz S22 0.1 GHz ±180˚ 0˚ S12 0.1 GHz S11 10 GHz S11 0.1 GHz -150˚ -30˚ S12 10 GHz -60˚ -90˚ -120˚ NE8500295-6 VDS = 10 V, IDS = 450 mA FREQUENCY (GHz) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.963 0.952 0.947 0.963 0.956 0.949 0.948 0.898 0.876 0.847 0.813 0.737 0.560 0.264 0.344 0.539 0.623 0.637 0.610 0.574 0.514 ANG -59.200 -149.100 -173.800 172.900 161.800 150.900 140.700 138.500 128.200 116.000 101.800 85.400 69.800 73.200 127.700 117.600 90.700 53.500 16.000 -16.900 -55.800 MAG S21 ANG MAG 0.003 0.016 0.017 0.018 0.021 0.022 0.029 0.031 0.036 0.041 0.048 0.054 0.057 0.046 0.023 0.013 0.038 0.075 0.096 0.099 0.090 16.698 149.400 5.714 97.600 3.033 74.200 2.152 56.400 1.701 41.000 1.472 26.000 1.328 11.300 1.164 0.700 1.168 -13.300 1.278 -28.700 1.432 -47.900 1.648 -71.000 1.926 -99.800 2.118 -137.200 1.924 -176.300 1.625 151.000 1.406 119.500 1.163 84.600 0.868 52.600 0.676 25.900 0.561 -0.600 S12 ANG 29.700 22.800 20.000 17.400 22.200 21.200 20.600 17.400 11.000 4.800 -6.900 -23.900 -47.400 -82.700 -123.600 99.500 36.300 -1.900 -41.300 -69.300 -88.500 MAG 0.373 0.463 0.485 0.512 0.532 0.556 0.578 0.605 0.607 0.595 0.616 0.664 0.757 0.871 0.920 0.884 0.838 0.779 0.718 0.693 0.673 S22 ANG -169.500 -171.200 -179.300 177.700 173.900 172.700 170.500 168.000 163.200 158.400 152.300 146.000 140.000 131.200 120.200 110.200 95.900 74.700 56.000 47.000 43.200 K 0.408 0.377 0.769 0.653 0.859 1.018 0.806 1.547 1.554 1.529 1.250 1.072 0.966 1.101 1.866 3.241 1.283 1.035 1.653 2.524 3.931 MAG1 (dB) 37.455 25.528 22.514 20.776 19.085 17.440 16.608 11.388 10.727 10.646 11.735 13.203 15.288 14.693 13.858 12.959 12.486 10.759 4.837 1.493 -0.936 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE85002 SERIES TYPICAL SCATTERING PARAMETERS (TC = 25°C) +90˚ +120˚ +60˚ +30˚ S22 10 GHz +150˚ S21 0.1 GHz S21 10 GHz ±180˚ S22 0.1 GHz S11 10 GHz S12 0.1 GHz 0˚ S11 0.1 GHz -150˚ S12 10 GHz -30˚ -120˚ -90˚ -60˚ NE8500295-8 VDS = 10 V, IDS = 450 mA FREQUENCY (GHz) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.971 0.937 0.934 0.947 0.939 0.921 0.906 0.887 0.866 0.836 0.805 0.734 0.587 0.303 0.116 0.394 0.536 0.570 0.497 0.354 0.288 ANG -54.800 -146.300 -174.000 170.900 158.300 153.800 145.400 137.000 126.200 113.900 98.800 80.200 57.400 23.500 -152.800 158.700 126.700 91.000 45.200 3.800 -34.500 MAG S21 ANG MAG 0.004 0.016 0.018 0.020 0.026 0.023 0.027 0.034 0.041 0.044 0.056 0.065 0.073 0.075 0.063 0.042 0.025 0.033 0.069 0.067 0.068 S12 ANG 35.400 24.000 22.300 20.800 28.100 22.700 20.900 19.900 10.200 6.000 -4.100 -18.900 -41.500 -69.900 -101.500 -134.100 165.800 49.500 -26.200 -59.800 -86.200 MAG 0.427 0.464 0.492 0.513 0.534 0.573 0.592 0.603 0.602 0.583 0.592 0.628 0.695 0.788 0.874 0.883 0.858 0.843 0.773 0.747 0.712 S22 ANG -155.900 -172.300 -178.900 177.400 173.300 169.500 168.100 165.700 160.300 155.200 149.200 142.800 138.700 133.400 125.700 115.900 102.200 81.500 59.800 51.700 46.800 K MAG1 (dB) 17.977 150.900 6.354 98.200 3.391 74.500 2.382 56.200 1.869 40.300 1.473 27.700 1.335 15.900 1.272 2.700 1.252 -11.100 1.343 -25.500 1.483 -43.600 1.658 -64.900 1.893 -90.600 2.124 -122.700 2.078 -159.400 1.824 167.500 1.587 137.200 1.413 103.500 1.105 66.600 0.787 38.600 0.622 17.000 0.030 0.452 0.821 0.811 0.954 1.495 1.570 1.497 1.423 1.556 1.211 1.074 0.948 0.925 1.015 1.421 2.264 1.665 1.861 3.631 5.336 36.527 25.989 22.751 20.759 18.566 13.906 12.501 11.563 10.984 10.456 11.454 12.409 14.138 14.521 14.431 12.522 11.697 11.551 6.692 2.173 -0.631 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE85002 SERIES RF TEST CIRCUIT GATE RF POWER SOURCE 1 KΩ S1 BIAS SUPPLY S2 DRAIN VDS = 10 V ID = 450 mA 20dB DIRECTIONAL COUPLER Circulator BIAS TEE TUNER D.U.T. TUNER BIAS TEE 10 dB ATTN. POWER METER POWER METER 30 dB ATTN. BIASING PROCEDURE Turn on the power supply. Make sure its voltage is 0 V. Turn on S1 and S2. Apply VGS = -5, then apply VDS = 10 V. Decrease VGS to obtain the required drain current, ID. Apply the RF input and adjust the gate voltage to maintain the desired drain current. Do not exceed a gate current of 10 mA (IG = 10 mA max). OUTLINE DIMENSIONS AND HANDLING PACKAGE OUTLINE 95 (Units in mm) 110 100 NE8500200 (CHIP) (Units in µm) 240 φ2.5±0.3 2 PLACES SOURCE 0.7±0.1 GATE 4.0 MIN 100 640 5.9±0.2 100 90 1800 100 DRAIN 6.5±0.3 14.0±0.15 18.0±0.5 +.06 0.1 -.02 2.1±0.15 0.2 MAX DIE ATTACHMENT 4.5 MAX Die attach can be accomplished with either Au-Ge (390±10°C) or Au-Sn (290 ± 10°C) preforms in a forming gas environment. Epoxy die attach is not recommended. 7.2±0.2 1.2 BONDING Gate and drain bonding wires should be minimum length, semihard fold wire (3-8% elongation) 30 microns or less in diameter. The source should be connected with gold ribbon or mesh. Bonding should be performed with a wedge tip that has a taper of approximately 15°. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be kept within a 300°C - 10 minute curve. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. All test and handling equipment should be grounded to minimize the possibilities of static discharge. See AN-1001 Recommended Handling Procedure for Microwave Transistor & MMIC Chips for additional infromation. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/26/2002