0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
NESG2031M16

NESG2031M16

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    NESG2031M16 - NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD...

  • 数据手册
  • 价格&库存
NESG2031M16 数据手册
DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz • High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V • 6-pin lead-less minimold (M16, 1208 PKG) ORDERING INFORMATION Part Number NESG2031M16 Order Number NESG2031M16-A Package 6-pin lead-less minimold (M16, 1208 PKG) NESG2031M16-T3 NESG2031M16-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 13.0 5.0 1.5 35 175 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10394EJ03V0DS (3rd edition) Date Published September 2009 NS Printed in Japan The mark shows major revised points. 2003, 2009 The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NESG2031M16 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power fT ⏐S21e⏐ NF NF Ga Ga Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 5 mA − − 130 − − 190 100 100 260 nA nA − VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 3 V, IC (set) = 20 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt 20 16.0 − − 15.0 − − 19.0 − − 25 18.0 0.8 1.3 17.0 10.0 0.15 21.5 13 − − 1.1 − − − 0.25 − − − GHz dB dB dB dB dB pF dB dBm MSG Note 3 PO (1 dB) Output 3rd Order Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt 23 dBm Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB/YFB zF 130 to 260 2 Data Sheet PU10394EJ03V0DS NESG2031M16 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 250 200 175 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 0.3 f = 1 MHz 0.2 150 100 50 0.1 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (°C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 VCE = 1 V Collector Current IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 VCE = 2 V Collector Current IC (mA) 0.001 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 VCE = 3 V Collector Current IC (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 30 25 20 15 10 5 IB = 20 μ A 200 μ A 180 μ A 160 μ A 140 μ A 120 μ A 100 μ A 80 μ A 60 μ A 40 μ A Collector Current IC (mA) 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 3 NESG2031M16 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V 1 000 VCE = 2 V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE 100 DC Current Gain hFE 100 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V DC Current Gain hFE 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10394EJ03V0DS NESG2031M16 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) VCE = 1 V, f = 2 GHz 25 20 15 10 5 0 1 VCE = 2 V, f = 2 GHz 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 10 Collector Current IC (mA) 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 MSG MAG VCE = 1 V, IC = 10 mA 30 Gain Bandwidth Product fT (GHz) 25 20 15 10 5 0 1 VCE = 3 V, f = 2 GHz 10 Collector Current IC (mA) 100 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 MAG 15 10 5 0 0.1 1 10 |S21e| 2 VCE = 2 V, IC = 10 mA 40 35 30 MSG 25 20 15 10 5 0 0.1 1 10 MAG |S21e| 2 VCE = 3 V, IC = 10 mA MSG MAG MAG MSG MSG 100 100 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 5 NESG2031M16 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 VCE = 1 V, f = 2 GHz MSG MAG 30 25 20 15 10 5 0 VCE = 1 V, f = 1 GHz MSG MAG |S21e|2 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 |S21e| 2 30 25 20 MSG 15 10 5 0 |S21e|2 MAG VCE = 1 V, f = 5 GHz VCE = 1 V, f = 3 GHz MSG MAG 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 |S21e|2 VCE = 2 V, f = 2 GHz MSG MAG 30 Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 10 5 0 VCE = 2 V, f = 1 GHz MSG |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10394EJ03V0DS NESG2031M16 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 VCE = 2 V, f = 3 GHz MSG MAG 30 25 20 15 10 5 0 VCE = 2 V, f = 5 GHz MSG MAG |S21e|2 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 |S21e|2 VCE = 3 V, f = 2 GHz MSG MAG 30 Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 10 5 0 VCE = 3 V, f = 1 GHz MSG |S21e| 2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 VCE = 3 V, f = 3 GHz MSG MAG 30 25 20 15 10 5 0 VCE = 3 V, f = 5 GHz MSG MAG |S21e|2 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 7 NESG2031M16 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 VCE = 3 V, f = 1 GHz, Icq = 20 mA 50 20 VCE = 3 V, f = 2 GHz, Icq = 20 mA OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 Collector Current IC (mA) 15 10 Pout IC 30 10 Pout IC 30 5 20 5 20 0 10 0 –5 –25 10 –5 –30 –25 –20 –15 –10 0 –5 –20 –15 –10 –5 0 0 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 VCE = 3 V, f = 3 GHz, Icq = 20 mA 50 20 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 VCE = 3 V, f = 5.2 GHz, Icq = 20 mA Collector Current IC (mA) Output Power Pout (dBm) 15 Pout IC Output Power Pout (dBm) 40 15 Pout IC 10 30 10 30 5 20 5 20 0 –5 –20 10 0 –5 –15 10 –15 –10 –5 0 0 5 –10 –5 0 5 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 8 Data Sheet PU10394EJ03V0DS Collector Current IC (mA) 40 Collector Current IC (mA) Output Power Pout (dBm) Output Power Pout (dBm) 15 40 40 NESG2031M16 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 30 5 Ga NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 Associated Gain Ga (dB) Ga 3 20 3 20 2 15 2 15 1 NF 0 1 10 Collector Current IC (mA) VCE = 1 V, f = 1 GHz 10 1 NF VCE = 2 V, f = 1 GHz 10 5 100 0 1 10 Collector Current IC (mA) 5 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 4 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 5 30 Associated Gain Ga (dB) 3 Ga 2 20 3 Ga 2 20 15 15 1 NF 0 1 10 Collector Current IC (mA) VCE = 1 V, f = 2 GHz 10 5 100 1 NF 0 1 10 Collector Current IC (mA) VCE = 2 V, f = 2 GHz 10 5 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 25 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 Associated Gain Ga (dB) 3 Ga 2 NF VCE = 1 V, f = 5.2 GHz 1 10 Collector Current IC (mA) 15 3 Ga 2 NF VCE = 2 V, f = 5.2 GHz 1 10 Collector Current IC (mA) 15 10 10 1 5 1 5 0 0 100 0 0 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 20 4 20 Associated Gain Ga (dB) Noise Figure NF (dB) 25 4 25 Associated Gain Ga (dB) 4 Noise Figure NF (dB) 25 4 Noise Figure NF (dB) 25 9 NESG2031M16 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 30 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 Associated Gain Ga (dB) Ga 3 20 3 Ga 2 20 2 15 15 1 NF 0 1 10 Collector Current IC (mA) VCE = 3 V, f = 1 GHz 10 1 NF VCE = 3 V, f = 2 GHz 10 5 100 0 1 10 Collector Current IC (mA) 5 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 25 3 Ga 2 NF VCE = 3 V, f = 5.2 GHz 1 10 Collector Current IC (mA) 15 10 1 5 0 0 100 Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 10 Data Sheet PU10394EJ03V0DS Associated Gain Ga (dB) Noise Figure NF (dB) 4 20 Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 25 4 25 NESG2031M16 PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.0±0.05 0.8+0.07 –0.05 0.4 1.2+0.07 –0.05 2 0.8 0.4 3 0.5±0.05 4 5 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking. 0.125+0.1 –0.05 0.15±0.05 1 6 Data Sheet PU10394EJ03V0DS zF 11 NESG2031M16 • T he information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E
NESG2031M16 价格&库存

很抱歉,暂时无法提供与“NESG2031M16”相匹配的价格&库存,您可以联系我们找货

免费人工找货