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NNCD3.3B

NNCD3.3B

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    NNCD3.3B - ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE - NEC

  • 数据手册
  • 价格&库存
NNCD3.3B 数据手册
DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3B to NNCD12B ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (500 mW TYPE) This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNCD2.0B to NNCD12B Series is into DO-35 Package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. φ 0.5 25 MIN. Cathode indication PACKAGE DIMENSIONS (in millimeters) FEATURES • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). • DHD (Double Heatsink Diode) construction. φ 2.0 MAX. APPLICATIONS • Circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber. MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 500 mW 100 W (tT = 10 µs 1 pulse) 175 °C –65 °C to +175 °C Fig. 7 Document No. D11770EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan 25 MIN. 4.2 MAX. © 1996 NNCD3.3B to NNCD12B ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Dynamic ImpedanceNote 2 Zz (Ω) MAX. 70 60 50 40 25 20 13 10 8 8 8 8 8 10 10 IT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3B NNCD3.6B NNCD3.9B NNCD4.3B NNCD4.7B NNCD5.1B NNCD5.6B NNCD6.2B NNCD6.8B NNCD7.5B NNCD8.2B NNCD9.1B NNCD10B NNCD11B NNCD12B 3.16 3.47 3.77 4.05 4.47 4.85 5.29 5.81 6.32 6.88 7.56 8.33 9.19 10.18 11.13 MAX. 3.53 3.83 4.14 4.53 4.91 5.35 5.88 6.40 6.97 7.64 8.41 9.29 10.3 11.26 12.30 IT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 Reverse Leakage IR (µA) Capacitance Ct (pF) TEST CONDITION E.S.D Voltage (kV) TEST CONDITION MAX. 20 10 5 5 5 5 5 5 2 0.5 0.5 0.5 0.2 0.2 0.2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 TYP. 240 230 220 210 190 160 140 120 110 90 90 90 80 70 70 MIN. 30 30 30 30 30 30 C = 150 pF R = 330 Ω (IEC1000 -4-2) VR = 0 V f = 1 MHz 30 30 30 30 30 30 30 30 30 Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal. 2 NNCD3.3B to NNCD12B TYPICAL CHARACTERISTICS (TA = 25 °C) Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE 600 Rth - Thermal Resistance - °C/W Fig. 2 THERMAL RESISTANCE vs. SIZE OF P.C BOARD 600 500 400 300 = 10 mm 200 100 0 = 5 mm S Junction to anbient P - Power Dissipation - mW 500 400 300 200 100 0 10 mm P.C Board φ 3 mm t = 0.035 mm = 5 mm = 10 mm P.C Board 7 mm t = 0.035 mm 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 2 100 TA - Ambient Temperature - °C S - Size of P.C Board - mm Fig. 3 IT - VBR CHARACTERISTICS NNCD5.6B NNCD5.1B 100 m NNCD3.3B NNCD3.6B 10 m NNCD3.9B NNCD4.3B NNCD4.7B 1m IT - On State Current - A TA = 25 °C NNCD6.8B TYP. NNCD6.2B NNCD7.5B NNCD8.2B NNCD9.1B Fig. 4 IT - VBR CHARACTERISTICS TA = 25 °C TYP. 100 m NNCD11B NNCD12B NNCD10B 10 m 1m IT - On State Current - A 100 µ 100 µ 10 µ 10 µ 1µ 1µ 100 n 100 n 10 n 10 n 1n 0 1 2 3 4 5 6 7 8 9 VBR - Breakdown Voltage - V 1n 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V 3 NNCD3.3B to NNCD12B Fig. 5 Zz - IT CHARACTERISTICS 1 000 ZZ - Dynamic Impedance - Ω TA = 25 °C TYP. NNCD3.3B 100 NNCD3.9B NNCD4.7B 10 NN CD NN 6B 5. CD NN CD 5B 7. 10 B 1 0.01 0.1 1 10 100 IT - On State Current - mA Fig. 6 TRANSIENT THERMAL IMPEDANCE 5 000 Zth - Transient Thermal Impedance - °C/W 1 000 300 °C/W NNCD [ ] B 100 10 5 1m 10 m 100 m 1 t - Time - s 10 100 Fig. 7 SURGE REVERSE POWER RATING 1 000 TA = 25 °C Non-repetitive PRSM PRSM - Surge Reverse Power - W tT 100 NNCD [ ] B 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - s 4 NNCD3.3B to NNCD12B REFERENCE Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202 5 NNCD3.3B to NNCD12B [MEMO] 6 NNCD3.3B to NNCD12B [MEMO] 7 NNCD3.3B to NNCD12B [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 8
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