NP36P06KDG-E2-AY

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY NP36P06KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3100 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −60 m20 m36 m108 56 1.8 175 −55 to +175 23 54 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.68 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18687EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NP36P06KDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −18 A VGS = −10 V, ID = −18 A VGS = −4.5 V, ID = −18 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −30 V, ID = −18 A, VGS = −10 V, RG = 0 Ω MIN. TYP. MAX. −10 m100 UNIT μA nA V S −1.0 12 −1.6 23 23.1 27.0 3100 350 205 8 11 210 110 −2.5 Drain to Source On-state Resistance 29.5 37.5 mΩ mΩ pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = −48 V, VGS = −10 V, ID = −36 A IF = −36 A, VGS = 0 V IF = −36 A, VGS = 0 V, di/dt = −100 A/μs 54 7 15 0.98 43 56 1.5 V ns nC Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD 50 Ω L VDD PG. BVDSS VDS VGS(−) 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(−) 90% 10% 10% 90% VGS(−) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = −2 mA PG. 50 Ω RL VDD 2 Data Sheet D18687EJ3V0DS NP36P06KDG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 Tch - Channel Temperature - °C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C -1000 -100 ID - Drain Current - A ID(pulse) PW =1 i 00 -10 -1 -0.1 TC = 25°C Single Pulse RDS(on) Limited (VGS = −10 V) ID(DC) DC w Po D er ip iss io at d it e im nL 1i m i μs s 1i 0 m i s -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 2.68°C/Wi 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18687EJ3V0DS 3 NP36P06KDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -120 -100 ID - Drain Current - A -1000 VGS = −10 V ID - Drain Current - A -100 -10 -1 -0.1 -0.01 Pulsed VDS = −10 V Pulsed -80 -60 -40 -20 0 0 -1 -2 -3 -4 -5 -6 -7 VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE −4.5 V Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 0 -1 -2 -3 -4 -5 -0.001 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V -3 -2.5 -2 -1.5 -1 -0.5 0 -75 -25 25 75 125 175 225 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 10 1 VDS = −10 V Pulsed 0.1 -0.1 -1 VDS = −10 V ID = −1 mA -10 -100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 60 50 40 30 20 10 Pulsed 0 -1 -10 -100 -1000 ID - Drain Current - A 80 70 60 50 40 30 20 10 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V ID = −36 A −18 A −8 A VGS = −4.5 V −10 V Pulsed 4 Data Sheet D18687EJ3V0DS NP36P06KDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 60 Ciss, Coss, Crss - Capacitance - pF 10000 Ciss VGS = −4.5 V 50 40 30 20 10 0 -75 -25 25 75 125 175 225 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1000 1000 Coss −10 V Crss 100 VGS = 0 V f = 1 MHz 10 -0.1 -1 -10 -100 ID = −18 A Pulsed VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -60 VDS - Drain to Source Voltage - V td(off) tf -12 VDD = −48 V −30 V −12 V -10 -8 -6 VGS -4 -2 ID = −36 A 0 0 10 20 30 40 50 60 QG - Gate Charge - nC VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -50 -40 -30 -20 -10 0 100 10 VDD = −30 V VGS = −10 V RG = 0 Ω -1 tr td(on) VDS 1 -0.1 -10 -100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 -100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A -10 VGS = −10 V -1 0V 100 10 di/dt = −100 A/μs VGS = 0 V 1 -0.1 -1 -10 -100 -0.1 Pulsed -0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D18687EJ3V0DS 5 NP36P06KDG PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZK) 10.0±0.3 No plating 7.88 MIN. 4 1.35±0.3 4.45±0.2 1.3±0.2 8.0 TYP. 9.15±0.3 15.25±0.5 0.025 to 0.25 0.5± 0.75±0.2 2.54 1 2 3 0.2 8o 0 to 0.25 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18687EJ3V0DS 2.54±0.25 NP36P06KDG • T he information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1