NP40N055KHE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055EHE, NP40N055KHE NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP40N055EHE-E1-AY NP40N055EHE-E2-AY NP40N055KHE-E1-AY NP40N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP40N055CHE-S12-AZ NP40N055DHE-S12-AY NP40N055MHE-S18-AY NP40N055NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14092EJ6V0DS00 (6th edition) Date Published October 2007 NS Printed in Japan 2002, 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 55 ±20 ±40 ±100 1.8 66 175 −55 to +175 29/21/7 0.8/44/49 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.27 83.3 °C/W °C/W 2 Data Sheet D14092EJ6V0DS NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Threshold Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(th) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 20 A VDS = VGS, ID = 250 μA VDS = 10 V, ID = 20 A VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 25 V, VGS = 0 V, f = 1 MHz ID = 2 0 A , VGS = 10 V, VDD = 28 V, RG = 1 Ω ID = 4 0 A , VDD = 44 V, VGS = 10 V IF = 40 A, VGS = 0 V IF = 40 A, VGS = 0 V, di/dt = 100 A/μs 1070 190 95 16 9.2 29 9.2 23 6 9 1.0 38 46 2.0 7 MIN. TYP. 18 3.0 14 10 ±10 1610 280 180 35 23 57 23 35 MAX. 23 4.0 UNIT mΩ V S μA μA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90 % 90 % 10 % 10 % VGS Wave Form 0 10 % VGS 90 % BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1 % VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14092EJ6V0DS 3 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 80 60 40 20 0 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC - Case Temperature - °C Figure.3 FORWARD BIAS SAFE OPERATING AREA 1000 Single Pulse Avalanche Energy - mJ TC - Case Temperature - °C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 60 50 40 30 20 10 0 25 0.8 mJ 49 mJ 44 mJ ID - Drain Current - A 100 d ite im V) )L 0 1 (on S RDVGS = ( ID(pulse) DC Po Lim wer ite Dis sip d ati PW ID(DC) 1m on 10 =1 s 0μ 0μ s s 10 IAS = 7 A 21 A 29 A 1 TC = 25°C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V 0.1 0.1 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°C/W 10 Rth(ch-C) = 2.27°C/W 1 0.1 Single Pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 4 Data Sheet D14092EJ6V0DS NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed 120 100 Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A 100 ID - Drain Current - A 80 60 40 20 VGS =10 V 10 TA = −55°C 25°C 75°C 150°C 175°C 1 0.1 VDS = 10 V 6 7 2 3 4 5 0 0 Pulsed 1 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed VDS = 10 V 10 TA = 175°C 75°C 25°C −55°C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 ID = 20 A 1 0.1 10 0 0 0.01 0.01 0.1 1 10 100 2 4 6 8 10 12 14 16 18 ID - Drain Current - A VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = VGS ID = 250 μA RDS(on) - Drain to Source On-state Resistance - mΩ 50 Pulsed 40 VGS(th) - Gate to Source Threshold Voltage - V Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.0 30 20 VGS = 10 V 2.0 10 1.0 0 0.1 0 1 10 100 −50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - °C Data Sheet D14092EJ6V0DS 5 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE RDS(on) - Drain to source On-state Resistance - mΩ Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 Pulsed 1000 Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 40 30 VGS = 10 V 20 IF - Diode Forward Current - A 100 VGS = 10 V 10 0V 10 0 −50 0 50 100 ID = 20 A 150 1 0.1 0 0.5 1.0 1.5 Tch - Channel Temperature - °C VF(S-D) - Source to Drain Voltage - V Ciss 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz Figure15. SWITCHING CHARACTERISTICS 1000 100 tf td(off) td(on) Coss 100 Crss 10 tr 10 0.1 1 10 100 VDD = 28 V VGS = 10 V 1 RG = 1 Ω 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 di/dt = 100 A/μs VGS = 0 V Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 14 60 VDD = 44 V 28 V 11 V VGS 12 10 8 6 20 VDS 0 0 10 20 30 ID = 40 A 40 4 2 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V 100 40 10 1 0.1 1 10 100 IF - Diode Forward Current - A QG - Gate Charge - nC 6 Data Sheet D14092EJ6V0DS VGS - Gate to Source Voltage - V NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE PACKAGE DRAWINGS (Unit: mm) 1)TO-263 (MP-25ZJ) Note 2)TO-263 (MP-25ZK) 4.8 MAX. 1.3 ± 0.2 No plating 10 TYP. 4 1.0 ± 0.5 8.5 ± 0.2 10.0 ± 0.3 7.88 MIN. 4 1.35 ± 0.3 4.45 ± 0.2 1.3 ± 0.2 8.0 TYP. 9.15 ± 0.3 15.25 ± 0.5 0.025 to 0.25 1 2 3 5.7 ± 0.4 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 0 .5R TY P. TY P. 2.54 TYP. R 0.8 0.5 ± 0.2 2.54 0.75 ± 0.2 0.5 ± 0.2 8ο 0 to 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.25 1 2 3 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) 3)TO-220 (MP-25) 3.0 ± 0.3 Note 4)TO-262 (MP-25 Fin Cut) 4.8 MAX. Note 10.6 MAX. 10.0 TYP. 1.0 ± 0.5 φ 3.6 ± 0.2 5.9 MIN. 1.3 ± 0.2 4.8 MAX. 1.3 ± 0.2 10 TYP. 15.5 MAX. 4 1 1.3 ± 0.2 2 3 4 123 6.0 MAX. 1.3 ± 0.2 12.7 MIN. 12.7 MIN. 8.5 ± 0.2 0.75 ± 0.1 2.54 TYP. 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8 ± 0.2 Note Not for new design 2.54 ± 0.25 Data Sheet D14092EJ6V0DS 7 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE 5)TO-220 (MP-25K) 6)TO-262 (MP-25SK) 2.8 ± 0.3 1.2 ± 0.3 10.0 ± 0.2 φ 3.8 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 10.0 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 10.1 ± 0.3 15.9 MAX. 6.3 ± 0.3 4 4 3.1 ± 0.2 12 13.7 ± 0.3 3 13.7 ± 0.3 1.27 ± 0.2 0.8 ± 0.1 1.27 ± 0.2 0.8 ± 0.1 3.1 ± 0.3 123 8.9 ± 0.2 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14092EJ6V0DS NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 40N055 HE Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow MP-25ZJ, MP-25ZK Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Wave soldering MP-25, MP-25K, MP-25SK, MP-25 Fin Cut Partial heating MP-25ZJ, MP-25ZK, MP-25K, MP-25SK Partial heating MP-25, MP-25 Fin Cut Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 300°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P300 P350 THDWS Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14092EJ6V0DS 9 NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE • T he information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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