NP80N04DHE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04EHE, NP80N04KHE NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE-E1-AY NP80N04KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N04CHE-S12-AZ NP80N04DHE-S12-AY NP80N04MHE-S18-AY NP80N04NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14239EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan 1999, 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 40 ±20 ±80 ±280 1.8 120 175 −55 to +175 52/31/13 2.7/96/169 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W 2 Data Sheet D14239EJ7V0DS NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 32 V, VGS = 10 V, ID = 8 0 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/μs Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 40 A, VGS = 10 V, RG = 1 Ω 2.0 15 3.0 31 6.2 2200 490 230 24 14 44 15 40 12 16 1.0 40 50 8.0 3300 730 410 52 36 88 37 60 MIN. TYP. MAX. 10 ±10 4.0 Unit μA μA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14239EJ7V0DS 3 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 25 50 75 100 125 150 175 200 TC - Case Temperature - °C Figure3. FORWARD BIAS SAFE OPERATING AREA Single Pulse Avalanche Energy - mJ 1000 ID(pulse) ID - Drain Current - A 100 d ite ) Lim0 V n) o S( =1 PW =1 0μ TC - Case Temperature - °C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 180 160 140 120 100 96 mJ 80 60 40 20 0 25 2.7 mJ 169 mJ ID(DC) Po DC Lim wer ite Dis sip d ati on 10 1m s RDVGS ( 0μ s s 10 IAS = 13 A 31 A 52 A 1 TC = 25°C Single pulse 0.1 0.1 1 10 100 50 75 100 125 150 175 VDS - Drain to Source Voltage - V Starting Tch - Starting Channel Temperature - °C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 1.25°C/W 0.1 Single pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 4 Data Sheet D14239EJ7V0DS NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed 300 250 ID - Drain Current - A Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 TA = −40°C 25°C 75°C 150°C 175°C ID - Drain Current - A 100 VGS = 10 V 200 150 100 50 1 0.1 1 2 3 4 VDS = 10 V 5 6 0 0 1 2 3 Pulsed 4 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 10 TA = 175°C 75°C 25°C −40°C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 10 0 1 0.1 ID = 40 A 0.01 0.01 0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = VGS ID = 250 μA RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V 3.0 10 VGS = 10 V 2.0 1.0 0 0 1 10 100 1000 −50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - °C Data Sheet D14239EJ7V0DS 5 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE RDS(on) - Drain to Source On-state Resistance - mΩ Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed IF - Diode Forward Current - A Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed VGS = 10 V 0V 10 16 100 12 VGS = 10 V 8 4 ID = 40 A 0 −50 0 50 100 150 1 0.1 0 0.5 1.0 1.5 Tch - Channel Temperature - °C VF(S-D) - Source to Drain Voltage - V Ciss 1000 Coss Crss 100 td(on), tr, td(off), tf - Switching Time - ns Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz Ciss, Coss, Crss - Capacitance - pF Figure15. SWITCHING CHARACTERISTICS 1000 tf 100 td(on) tr 10 VDD = 20 V VGS = 10 V RG = 1 Ω 1 0.1 td(off) 10 0.1 1 10 100 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns di/dt = 100 A/μs VGS = 0 V Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 VDS - Drain to Source Voltage - V 16 14 VGS - Gate to Source Voltage - V 100 60 VDD = 32 V 20 V 8V VGS 12 10 8 6 40 10 20 VDS ID = 80 A 0 4 2 30 40 1 0.1 1.0 10 100 0 10 20 IF - Diode Forward Curren - A QG - Gate Charge - nC 6 Data Sheet D14239EJ7V0DS NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE PACKAGE DRAWINGS (Unit: mm) 1)TO-263 (MP-25ZJ) Note 2)TO-263 (MP-25ZK) 4.8 MAX. 1.3 ± 0.2 No plating 10 TYP. 4 10.0 ± 0.3 7.88 MIN. 4 1.35 ± 0.3 4.45 ± 0.2 1.3 ± 0.2 1.0 ± 0.5 8.5 ± 0.2 8.0 TYP. 9.15 ± 0.3 15.25 ± 0.5 0.025 to 0.25 1 2 3 5.7 ± 0.4 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 0 .5R TY P. TY P. 2.54 TYP. R 0.8 0.5 ± 0.2 2.54 0.75 ± 0.2 0.5 ± 0.2 8ο 0 to 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.25 1 2 3 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) 3)TO-220 (MP-25) 3.0 ± 0.3 Note 4)TO-262 (MP-25 Fin Cut) 4.8 MAX. Note 10.6 MAX. 10.0 TYP. 1.0 ± 0.5 φ 3.6 ± 0.2 5.9 MIN. 1.3 ± 0.2 4.8 MAX. 1.3 ± 0.2 10 TYP. 15.5 MAX. 4 1 1.3 ± 0.2 2 3 4 123 6.0 MAX. 1.3 ± 0.2 12.7 MIN. 12.7 MIN. 8.5 ± 0.2 0.75 ± 0.1 2.54 TYP. 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8 ± 0.2 Note Not for new design 2.54 ± 0.25 Data Sheet D14239EJ7V0DS 7 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE 5)TO-220 (MP-25K) 6)TO-262 (MP-25SK) 2.8 ± 0.3 1.2 ± 0.3 10.0 ± 0.2 φ 3.8 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 10.0 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 10.1 ± 0.3 15.9 MAX. 6.3 ± 0.3 4 4 3.1 ± 0.2 12 13.7 ± 0.3 3 13.7 ± 0.3 1.27 ± 0.2 0.8 ± 0.1 1.27 ± 0.2 0.8 ± 0.1 3.1 ± 0.3 123 8.9 ± 0.2 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14239EJ7V0DS NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 80N04 HE Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow MP-25ZJ, MP-25ZK Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Wave soldering MP-25, MP-25K, MP-25SK, MP-25 Fin Cut Partial heating MP-25ZJ, MP-25ZK, MP-25K, MP-25SK Partial heating MP-25, MP-25 Fin Cut Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 300°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P300 P350 THDWS Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14239EJ7V0DS 9 NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE • T he information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1