PS2566L2-1

DATA SHEET PHOTOCOUPLER PS2566-1,-2, PS2566L-1,-2 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2566-1, -2 and PS2566L-1, -2 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon darlington connected phototransistor. PS2566-1, -2 are in a plastic DIP (Dual In-line Package) and PS2566L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES • AC input response • High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products (Option) • High current transfer ratio (CTR = 2 000 % TYP.) • High-speed switching (tr, tf = 100 µs TYP.) • UL approved (File No. E72422 (S) ) • CSA approved (No. CA 101391) • BSI approved (BS415, BS7002) No. 7112 • SEMKO approved (SS4410165) No. 9317144 • NEMKO approved (NEK-HD 195S6) No. A21409 • DEMKO approved (Section 101, 137) No. 300535 • FIMKO approved (E69-89) No. 167265-08 • VDE0884 approved (Option) APPLICATIONS • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P12992EJ4V0DS00 (4th edition) (Previous No. LC-2228) Date Published August 1997 NS Printed in Japan The mark
shows major revised points. © 1992 PS2566-1,-2,PS2566L-1,-2 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2566-1 (New Package) 43 4.6 ± 0.35 12 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 PS2566-1 43 5.1 MAX. 12 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 4.55 MAX. 3.8 MAX. 6.5 2.8 MIN. 0.65 2.8 MIN. 0.50 ± 0.10 0.25 M 2.54 4.55 MAX. 1.25±0.15 0 to 15˚ 1.25±0.15 2.54 0.65 3.8 MAX. 6.5 0.50 ± 0.10 0.25 M 0 to 15˚ PS2566L1-1 43 PS2566-2 8765 5.1 MAX. 12 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 10.16 7.62 10.2 MAX. 1234 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 7.62 6.5 4.25 MAX. 3.8 MAX. 2.8 MIN. 2.8 MIN. 4.55 MAX. 0.35 0.65 3.8 MAX. 6.5 1.25±0.15 2.54 0.50 ± 0.10 0.25 M 0 to 15˚ 1.25±0.15 0.50 ± 0.10 0.25 M 2.54 0 to 15˚ Caution New package 1ch only 2 PS2566-1,-2,PS2566L-1,-2 Lead Bending Type PS2566L-1 (New Package) 43 4.6 ± 0.35 12 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 0.05 to 0.2 7.62 3.8 MAX. 6.5 6.5 PS2566L-1 43 5.1 MAX. 12 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 3.8 MAX. 0.05 to 0.2 0.05 to 0.2 1.25±0.15 0.25 M 2.54 0.90 ± 0.25 9.60 ± 0.4 1.25±0.15 0.25 M 2.54 0.90 ± 0.25 9.60 ± 0.4 PS2566L2-1 43 PS2566L-2 8765 5.1 MAX. 12 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 0.05 to 0.2 10.2 MAX. 1234 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 6.5 7.62 3.8 MAX. 7.62 3.8 MAX. 1.25±0.15 0.25 M 2.54 0.9 ± 0.25 10.16 12.0 MAX. 1.25±0.15 0.25 M 2.54 0.90 ± 0.25 9.60 ± 0.4 Caution New package 1ch only 3 PS2566-1,-2,PS2566L-1,-2 ORDERING INFORMATION Part Number Package Safety Standard Approval Application part *1 number PS2566-1 • CSA approved • NEMKO approved • SEMKO approved PS2566-1 PS2566L-1 PS2566L1-1 PS2566L2-1 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) 8-pin DIP 8-pin DIP (lead bending surface mount) 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) 8-pin DIP 8-pin DIP (lead bending surface mount) Standard products • UL approved • BSI approved • DEMKO approved • FIMKO approved PS2566-2 PS2566L-2 PS2566-1-V PS2566L-1-V PS2566L1-1-V PS2566L2-1-V PS2566-2 VDE0884 approved products (Option) PS2566-1 PS2566-2-V PS2566L-2-V PS2566-2 *1 As applying to Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2566-1, PS2566L-1 Diode Forward Current (DC) Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Unit PS2566-2, PS2566L-2 80 mA 1.2 120 1 40 6 mW/°C mW/ch A V V 160 1.6 160 mA/ch mW/°C mW/ch Vr.m.s. °C °C IF ∆PD/°C PD IFP VCEO VECO IC 1.5 150 Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation 200 2.0 200 5 000 *3 3 750 –55 to +100 –55 to +150 ∆PC/°C PC BV Isolation Voltage *2 Operating Ambient Temperature Storage Temperature TA Tstg *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output *3 VDE0884 approved products (Option) 4 PS2566-1,-2,PS2566L-1,-2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Terminal Capacitance Transistor Collector to Emitter Dark Current Current Transfer Ratio CTR Ratio *1 Symbol VF Ct ICEO IF = ±10 mA Conditions MIN. TYP. 1.17 100 MAX. 1.4 Unit V pF V = 0 V, f = 1.0 MHz VCE = 40 V, IF = 0 mA 400 nA Coupled CTR CTR1/ CTR2 VCE (sat) IF = ±1 mA, VCE = 2 V IF = 1 mA, VCE = 2 V 200 0.3 2 000 1.0 3.0 % Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *2 IF = ±1 mA, IC = 2 mA 1.0 V Ω RI-O CI-O tr tf VI-O = 1.0 kV V = 0 V, f = 1.0 MHz VCC = 10 V, IC = 10 mA, RL = 100 Ω 10 11 0.5 100 100 pF µs *2 *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1 IF2 IC1 VCE IC2 *2 Test circuit for switching time Pulse Input PW = 1 ms Duty Cycle = 1/10 VOUT RL = 100 Ω IF VCC 50 Ω 5 PS2566-1,-2,PS2566L-1,-2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) 150 Diode Power Dissipation PD (mW) 200 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE PS2566-1 PS2566L-1 100 PS2566-2 PS2566L-2 1.5 mW/˚C 150 PS2566-2 PS2566L-2 100 PS2566-1 PS2566L-1 2 mW/˚C 50 1.2 mW/˚C 1.6 mW/˚C 50 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 50 Forward Current IF (mA) TA = +100 ˚C +60 ˚C +25 ˚C 80 60 Forward Current IF (mA) 40 20 0 –20 –40 –60 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 –80 –1.5 FORWARD CURRENT vs. FORWARD VOLTAGE 10 5 1 0.5 0 ˚C –25 ˚C –55 ˚C 0.1 0.7 –1.0 –0.5 0 0.5 1.0 1.5 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current ICEO (nA) 10 000 Collector Current IC (mA) VCE = 2 V 5V 10 V 24 V 40 V COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 200 100 50 5 mA 1 mA 10 5 0.5 mA 10 mA 1000 100 10 0.2 mA 1 0.5 0.2 0.4 IF = 0.1 mA 1 –50 –25 0 25 50 75 100 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V) 6 PS2566-1,-2,PS2566L-1,-2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 5 mA Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 –50 –25 0 25 50 75 100 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 160 140 Collector Current IC (mA) 120 100 80 60 40 20 0 2 1 mA IF = 0.5 mA 4 6 8 10 2 mA Collector to Emitter Voltage VCE (V) Ambient Temperature TA (˚C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 8 000 Current Transfer Ratio CTR (%) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 3 000 Current Transfer Ratio CTR (%) VCE = 2 V 7 000 6 000 5 000 4 000 3 000 2 000 1 000 0 0.1 0.5 1 5 10 30 Forward Current IF (mA) VCE = 2 V 2 500 2 000 1 500 1 000 500 0 10 50 100 500 Forward Current IF ( µ A) SWITCHING TIME vs. LOAD RESISTANCE 1 000 VCC = 5 V, 500 IC = 2 mA, CTR = 2 280 % tf 100 50 td tr 10 000 5 000 Switching Time t ( µ s) SWITCHING TIME vs. LOAD RESISTANCE tf VCC = 5 V, IF = 1 mA, CTR = 2 280 % Switching Time t ( µ s) 1 000 500 ts 100 50 tr 10 5 2 30 50 ts 100 500 1k 5k 10 td 300 500 1k 5k 10 k 50 k 100 k Load Resistance RL (Ω) Load Resistance RL (Ω) 7 PS2566-1,-2,PS2566L-1,-2 FREQUENCY RESPONSE 1.2 0 IF = 1 mA, VCE = 2 V 1.0 IF = 1 mA (TYP.) LONG TIME CTR DEGRADATION CTR (Relative Value) Normalized Gain GV –5 –10 –15 RL = 100 Ω –20 0.8 0.6 0.4 0.2 0 10 TA = 25 oC TA = 60 oC 0.2 0.5 1 2 5 10 20 50 100 200 102 103 104 105 106 Frequency f (kHz) Time (Hr) 8 PS2566-1,-2,PS2566L-1,-2 TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 4.3±0.2 16.0±0.3 7.5±0.1 1.55±0.1 8.0±0.1 0.3 5.6±0.1 Taping Direction PS2566L-1-E3 PS2566L-1-F3 PS2566L-1-E4 PS2566L-1-F4 Outline and Dimensions (Reel) 2.0±0.5 φ 13.0±0.5 PS2566L-1-E3, E4: φ 250 PS2566L-1-F3, F4: φ 330 R 1.0 φ 21.0±0.8 φ 80.0±5.0 10.3±0.1 16.4 +2.0 –0.0 Packing: PS2566L-1-E3, E4 1 000 pcs/reel PS2566L-1-F3, F4 2 000 pcs/reel 9 PS2566-1,-2,PS2566L-1,-2 Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 4.3±0.2 16.0±0.3 10.3±0.1 0.3 1.55±0.1 12.0±0.1 10.4±0.1 Taping Direction PS2566L-2-E3 PS2566L-2-E4 Outline and Dimensions (Reel) 2.0±0.5 φ 13.0±0.5 7.5±0.1 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 10 PS2566-1,-2,PS2566L-1,-2 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature • Time of temperature higher than 210 °C • Number of reflows • Flux 235 °C (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature • Time • Number of times • Flux 260 °C or below (molten solder temperature) 10 seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 11 PS2566-1,-2,PS2566L-1,-2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) Clearance distance Creepage distance Comparative tracking index (DIN IEC 112/VDE 0303 part 1) Material group (DIN VDE 0109) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) Tstg TA CTI UIORM Upr Symbol Speck Unit IV III 55/100/21 890 1 068 Vpeak Vpeak Upr 1 424 Vpeak UTR 6 000 2 > 7.0 > 7.0 175 III a –55 to +150 –55 to +100 Vpeak mm mm °C °C Ω Ω Ris MIN. Ris MIN. 10 11 10 12 Tsi Isi Psi Ris MIN. 175 400 700 10 9 °C mA mW Ω 12 PS2566-1,-2,PS2566L-1,-2 [MEMO] 13 PS2566-1,-2,PS2566L-1,-2 [MEMO] 14 PS2566-1,-2,PS2566L-1,-2 [MEMO] 15 PS2566-1,-2,PS2566L-1,-2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5