PS2703-4-V

DATA SHEET PHOTOCOUPLER PS2703-1,PS2703-2,PS2703-4 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER TM Series− DESCRIPTION The PS2703-1, PS2703-2, PS2703-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. Each is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 3 750 Vr.m.s.) • High collector to emitter voltage (VCEO = 120 V) • SOP (Small Outline Package) type • Each isolated channel per package • High-speed switching (tr, tf = 10 µs TYP.) • Taping product number (Only-1 type): PS2703-1-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hibrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers • Power supply ORDERING INFORMATION Part Number PS2703-1 PS2703-2 PS2703-4 PS2703-1-V PS2703-2-V PS2703-4-V Package 4-pin SOP 8-pin SOP 16-pin SOP 4-pin SOP 8-pin SOP 16-pin SOP VDE0884 specification products (Option) Safety Standard Approval Standard specification products • UL approved The information in this document is subject to change without notice. Document No. P11308EJ6V0DS00 (6th edition) Date Published December 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1988 PS2703-1,PS2703-2,PS2703-4 PACKAGE DIMENSIONS (in millimeters) 4.5 MAX. PS2703-1 TOP VIEW 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 7.0±0.3 4.4 1.3 2.3 MAX. 0.1±0.1 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.25 M 0.15 +0.10 –0.05 2.0 0.5±0.3 PS2703-2 9.3 MAX. 8 7 6 TOP VIEW 5 1. 3. 2. 4. 5. 7. 6. 8. 1 2 3 4 7.0±0.3 4.4 1.3 Anode Cathode Emitter Collector 2.3 MAX. 0.1±0.1 0.15 +0.10 –0.05 2.0 2.54 0.4 +0.10 –0.05 0.25 M 1.2 MAX. 0.5±0.3 PS2703-4 19.46 MAX. 16 15 TOP VIEW 14 13 12 11 10 9 1 2 3 4 5 6 7 8 1. 3. 5. 7. 2. 4. 6. 8. 9. 11. 13. 15. 10. 12. 14. 16. Anode Cathode Emitter Collector 7.0±0.3 4.4 1.3 2.3 MAX. 0.1±0.1 0.15 +0.10 –0.05 2.0 0.4 +0.10 –0.05 0.25 M 2.54 1.2 MAX. 0.5±0.3 2 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Symbol PS2703-1 PS2703-2, PS2703-4 50 6 0.8 80 1 120 6 30 1.5 150 3 750 –55 to +100 –55 to +150 1.2 120 Unit Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current *1 IF VR mA V mW/°C mW/ch A V V mA/ch mW/°C mW/ch Vr.m.s. °C °C ∆PD/°C PD IFP VCEO VECO IC Transistor Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation ∆PC/°C PC BV TA Tstg Isolation Voltage *2 Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P11308EJ6V0DS00 3 PS2703-1,PS2703-2,PS2703-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Current Current Transfer Ratio (IC/IF) *1 Symbol VF IR Ct ICEO CTR I F = 5 mA VR = 5 V Conditions MIN. TYP. 1.1 MAX. 1.4 5 Unit V µA pF V = 0 V, f = 1 MHz IF = 0 mA, VCE = 120 V IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V 50 10 30 100 150 80 0.3 10 11 nA % 400 Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *2 VCE (sat) RI-O CI-O tr tf IF = 10 mA, IC = 2 mA VI-O = 1 kVDC V = 0 V, f = 1 MHz VCC = 5 V, IC = 2 mA, RL = 1 kΩ V Ω 0.4 10 10 pF µs *2 *1 CTR rank (only PS2703-1) CTR rank K CTR (%) 200 to 400 80 to L 100 to 300 25 to M 50 to 150 10 to Conditions IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 5 V *2 Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 In monitor 50 Ω VOUT R L = 1 kΩ 4 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 Diode Power Dissipation PD (mW) 75 150 PS2703-1 1.5 mW/˚C 100 PS2703-2, PS2703-4 1.2 mW/˚C 50 50 25 0 25 50 75 100 0 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 10 mA 5 mA 4 mA Forward Current IF (mA) 10 TA = +100 ˚C +75 ˚C +50 ˚C Collector Current IC (mA) 6 IF = 8 3 mA 1 0.1 +25 ˚C 0 ˚C –25 ˚C –55 ˚C 4 2 mA 2 1 mA 0.5 mA 2 4 6 8 10 0.01 0.6 0.8 1.0 1.2 1.4 1.6 0 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current ICEO (nA) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 5 Collector Current IC (mA) 50 000 10 000 5 000 1 000 500 100 50 10 5 1 0.5 0.1 –60 –40 –20 0 20 40 60 80 100 VCE = 40 V 24 V 10 V IF = 25 mA 10 mA 5 mA 2.5 mA 2 mA 1.5 mA 1 0.5 0.5 mA 1 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature TA (˚C) Collector Saturation Voltage VCE (sat) (V) Data Sheet P11308EJ6V0DS00 5 PS2703-1,PS2703-2,PS2703-4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 300 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR 1.2 1.0 0.8 0.6 0.4 0.2 ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V –25 0 25 50 75 100 VCE = 5 V 250 200 150 100 50 0 0.1 0.0 –55 0.5 1 5 10 50 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 100 VCC = 5V, IC = 2 mA Switching Time t ( µ s) FREQUENCY RESPONSE 1.2 tf tr Normalized Gain GV 1.0 0.8 0.6 0.4 0.2 RL = 1 kΩ 510 Ω 300 Ω 100 Ω 10 td ts 1 0.1 10 100 1k 10 k 0.0 0.5 1 5 10 50 100 500 Load Resistance RL (Ω) Frequency f (kHz) SWITCHING TIME vs. LOAD RESISTANCE 1 000 CTR Dgradation (Relative Value) LONG TIME CTR DEGRADATION 1.2 IF = 5 mA, VCC = 5 V, CTR = 90 % Switching Time t ( µ s) 1.0 0.8 0.6 0.4 0.2 0.0 IF = 1 mA, TA = 25 ˚C IF = 5 mA, TA = 25 ˚C IF = 20 mA, TA = 25 ˚C IF = 20 mA, TA = 60 ˚C 100 tf ts 10 tr 1 td 0.1 1 10 100 1 102 103 104 105 106 Load Resistance RL (kΩ) Time (Hr) Remark The graphs indicate nominal characteristics. 6 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 2.4±0.1 12.0±0.2 5.5±0.1 1.55±0.1 8.0±0.1 4.6±0.1 0.3 Taping Direction PS2703-1-E3 PS2703-1-F3 PS2703-1-E4 PS2703-1-F4 Outline and Dimensions (Reel) 1.5±0.1 1.5±0.1 φ 21.0±0.8 120 ˚ PS2703-1-E3, E4: φ 178 PS2703-1-F3, F4: φ 330 7.4±0.1 1.5±0.5 0˚ 6.0±1 φ 66 2.0±0.5 φ 13.0±0.5 Packing: PS2703-1-E3, E4 900 pcs/reel PS2703-1-F3, F4 3 500 pcs/reel Data Sheet P11308EJ6V0DS00 7 6 12.4 +2.0 –0.0 18.4 MAX. PS2703-1,PS2703-2,PS2703-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature • Time of temperature higher than 210 °C • Number of reflows • Flux 235 °C (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235 ˚C or below (2) Dip soldering • Temperature • Time • Number of times • Flux 260 °C or below (molten solder temperature) 10 seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 8 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) Clearance distance Creepage distance Comparative tracking index (DIN IEC 112/VDE 0303 part 1) Material group (DIN VDE 0109) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) Ris MIN. 10 9 Symbol Speck Unit IV III 55/100/21 UIORM Upr Upr 710 850 1 140 Vpeak Vpeak Vpeak UTR 6 000 2 >5 >5 Vpeak mm mm CTI 175 III a Tstg TA –55 to +150 –55 to +100 °C °C Ris MIN. Ris MIN. 10 10 12 Ω Ω 11 Tsi Isi Psi 150 200 300 °C mA mW Ω Data Sheet P11308EJ6V0DS00 9 PS2703-1,PS2703-2,PS2703-4 [MEMO] 10 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 [MEMO] Data Sheet P11308EJ6V0DS00 11 PS2703-1,PS2703-2,PS2703-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5