PS2732-1

HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP PHOTOCOUPLER FEATURES • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN: PS2732-1,-2,-4 VCEO: 350 V MIN: PS2733-1,-2,-4 • SOP (SMALL OUT-LINE PACKAGE) • ULTRA HIGH CURRENT TRANSFER RATIO CTR: 4000% TYP • TAPING PRODUCT NUMBER (Only -1 Type) PS2732-1-E3, F3 PS2733-1-E3, F3 PS2732-1, -2, -4 PS2733-1, -2, -4 DESCRIPTION The PS2732 and PS2733 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. Each is mounted in a plastic SOP (Small Out-line Package) for high density applications. APPLICATIONS Interface circuit for various instrumentations and control equipment. • REPLACEMENT FOR RELAY IN PULSE-DIAL CIRCUIT • HIGH CTR CIRCUIT APPLICATIONS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER SYMBOLS VF PARAMETERS Forward Voltage, IF = 10 mA Reverse Current, VR = 5 V Junction Capacitance, V = 0, f = 1.0 MHz Collector to Emitter Dark Current, VCE = 300 V, IF = 0 Current Transfer Ratio, IF = 1 mA, VCE = 2 V Collector Saturation Voltage, IF = 1 mA, IC = 2 mA Isolation Resistance, VIN-OUT = 1.0 k VDC Isolation Capacitance, V = 0, f = 1.0 MHZ Rise Time1, VCC = 5 V, IC = 10 mA, RL = 100 Ω Fall Time1, VCC = 5 V, IC = 10 mA, RL = 100 Ω UNITS V µA pF nA % V Ω pF µs µs 1011 0.4 100 100 1500 4000 1.0 30 400 PS2732-1, -2, -4, PS2733-1, -2, -4 MIN TYP 1.15 MAX 1.4 5 Diode IR Ct ICEO CTR VCE(sat) Coupled Transistor R1-2 C1-2 tr tf Note: 1. Test Circuit for Switching Time PULSE INPUT VCC 43 8 765 16 15 14 13 12 11 10 9 ( PW = 100 µs Duty Cycle = 1/10 ) IF 1 5 2 50 Ω 4 VOUT 12 PS2732-1 PS2733-1 1234 PS2732-2 PS2733-2 12345 678 RL = 100 Ω PS2732-4 PS2733-4 California Eastern Laboratories PS2732-1,-2,-4, PS2733-1,-2,-4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS PS2732-1 PS2732-2, -4 PS2733-1 PS2733-2, -4 6 50 80 1 6 50 80 1 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput. Diode VR IF PD IF (PEAK) Transistor VCEO VEBO IC PC Coupled BV TOP TSTG Reverse Voltage Forward Current V mA Power Dissipation mW/Ch Peak Forward Current A (PW = 100 µs, Duty Cycle 1%) Collector to Emitter Voltage V (IC = ImA, IB = 0) Emitter to Base Breakdown Volt V (IE = 100µA, IB = 0) Collector Current mA/Ch Power Dissipation mW/Ch Isolation Voltage2 Operating Temperature Storage Temperature Vr.m.s. °C °C 300/350 6 150 150 300/350 6 150 120 2500 -55 to +100 -55 to +150 °C) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 TYPICAL PERFORMANCE CURVES (TA = 25 DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 75 150 PS2732-1 PS2733-1 1.5 mW/˚C 100 PS2732-2,-4 PS2733-2,-4 1.2 mW/˚C 50 50 25 0 25 50 75 100 0 25 50 75 100 Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 TA = 100 ˚C 75 ˚C 50 ˚C 10 25 ˚C 0 ˚C -25 ˚C -55 ˚C Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 140 5 mA 4 mA Collector Current, IC (mA) Forward Current, IF (mA) 120 100 4.5 mA 3.5 mA 3 mA 2.5 mA 2 mA 1 80 60 40 1.5 mA 1 mA 0.1 IF = 0.5 mA 20 0.01 0.6 0.8 1 1.2 1.4 1.6 0 1 2 3 4 5 Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V) PS2732-1,-2,-4, PS2733-1,-2,-4 TYPICAL PERFORMANCE CURVES (TA = 25 COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE °C) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 1000 Collector to Emitter Dark Current, ICEO (A) 10 µ VCE = 300 V 1µ Collector Current, IC (mA) 100 IF = 5 mA IF = 2 mA IF = 1 mA 100 n 10 IF = 0.5 mA 10 n 1n 1 100 p -50 -25 0 25 50 75 100 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Ambient Temperature, TA (°C) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 1.2 5000 Collector Saturation Voltage, VCE(sat) (V) CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT VCE = 2 V ∆CTR, Normalized Output Current Current Transfer Ratio, CTR (%) 1.0 Sample A 4000 Sample B 0.8 3000 0.6 2000 0.4 Normalized to 1.0 at TA = 25 ˚C IF = 1 mA, VCE = 2 V 1000 0.2 0 -50 -25 0 25 50 75 100 0 0.1 0.5 1 5 10 20 Ambient Temperature, TA (°C) SWITCHING TIME vs. LOAD RESISTANCE 300 VCC = 10 V, IC = 10 mA Pulse Width = 5 ms Duty Cycle = 1/2 tr 0 Forward Current, IF (mA) FREQUENCY RESPONSE 100 50 td Voltage Gain, AV (dB) 10 Ω 100 Ω Switching Time,t (µs) -5 -10 tf 10 1 kΩ -15 -20 -25 -30 0.01 VCE = 4 V, IC = 10 mA VIN = 0.1 Vp-p 1 kΩ 1 µF VIN 47 Ω RL VOUT 0.1 1 10 100 5 ts 1 20 50 100 500 1k 2k Load Resistance, RL (Ω) Frequency, f (kHz) PS2732-1,-2,-4, PS2733-1,-2,-4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) CTR DEGRADATION 1.2 IF = 1 mA 1.0 TA = 25 ˚C ∆CTR Normalized 0.8 TA = 60 ˚C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time, Hr OUTLINE DIMENSIONS (Units in mm) PS2732-1, PS2733-1 PIN CONNECTION (Top View) 3 43 4 8 PS2732-2, PS2733-2 PIN CONNECTION 5 (Top View) 8 765 1. 2. 3. 4. Anode Cathode Emitter Collecter 1 4 9.3 MAX 12 1. 3. 2. 4. 5. 7. 6. 8. Anode Cathode Emitter Collecter 1234 1 2.0 2.3 MAX 0.1 ± 0.1 2 7.0 ± 0.3 4.4 +0.10 0.15 -0.05 4.5 MAX 1.3 2.3 MAX 2.0 0.15 -0.05 2.54 0.4 -0.05 +0.10 +0.10 7.0 ± 0.3 4.4 1.3 2.54 1.2 MAX 0.4+0.10 -0.05 0.5 ± 0.3 0.1 ± 0.1 1.2 MAX 0.5 ± 0.3 PS2732-4, PS2733-4 16 9 PIN CONNECTION (Top View) 16 15 14 13 12 11 10 9 12345 678 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 1 19.46 MAX 2.0 2.3 MAX 0.1 ± 0.1 2.54 0.4 +0.10 -0.05 8 7.0 ± 0.3 4.4 0.15 -0.05 1.2 MAX 0.5 ± 0.3 +0.10 1.3 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 7/26/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE