UPA1717

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1717 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain DESCRIPTION The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 • Low Ciss : Ciss = 830 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.12 M µPA1717G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg −30 # 25 #6 # 24 V V A A W °C °C Gate Protection Diode Source Gate Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 2.0 150 –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14047EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan © 1999, 2000 µ PA1717 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = −10 V, ID = −3 A VGS = −4.5 V, ID = −3 A VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −3 A VDS = −30 V, VGS = 0 V VGS = # 25 V, VDS = 0 V VDS = −10 V VGS = 0 V f = 1 MHz I D = −3 A VGS(on) = −10 V VDD = −15 V RG = 6 Ω I D = −6 A VDD = −24 V VGS = −10 V IF = 6 A, VGS = 0 V IF = 6 A, VGS = 0 V di/dt = 100 A / µs 830 330 130 15 120 70 50 15 3 5 0.82 35 15 −1.5 3.0 MIN. TYP. 26 44 −2.0 7.5 −1 # 10 MAX. 33 59 −2.5 UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID ( − ) VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID Wave Form VGS (−) VGS Wave Form IG = −2 mA VGS(on) 90 % RL VDD 0 10 % PG. 90 % 90 % 50 Ω ID 0 10 % 10 % td(on) ton tr td(off) toff tf 2 Data Sheet G14047EJ1V0DS00 µ PA1717 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 Mounted on ceramic substrate of 1200mm 2 x 2.2mm 0 20 40 60 80 100 120 140 160 80 100 120 140 160 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA −100 ID - Drain Current - A −10 DS RV t (a −1 d ite ) im 0 V )L −1 n (o = GS ID(pulse) PW ID(DC) Po we rD s 1 10 0 m 0m s s iss ipa tio 1m =1 Remark Mounted on ceramic substrate of 00 µs 1200 mm x 2.2 mm 2 n Lim −0.1 TA = 25 ˚C Single Pulse −0.01 −0.01 −0.1 ite d −1 −10 −100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - ˚C/W Rth(ch-A) = 62.5 ˚C/W 10 1 0.1 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G14047EJ1V0DS00 3 µ PA1717 FORWARD TRANSFER CHARACTERISTICS −100 −10 VDS = −10 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −30 −25 Pulsed VGS = −10 V ID - Drain Current - A −1 −0.1 −0.01 −0.001 TA = 150˚C 75˚C 25˚C −25˚C ID - Drain Current - A −20 −15 −10 −5 −4.5 V 0 −1 −2 −3 Pulsed −4 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S 100 TA = −25˚C 25˚C 75˚C 150˚C VDS = −10 V Pulsed RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 60 50 40 30 20 10 0 −5 −10 −15 ID = −6 A −3 A 10 1 0.1 −0.1 −1 −10 −100 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed 80 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V −3.0 −2.5 −2.0 −1.5 −1.0 −0.5 0 −50 VDS = −10 V ID = −1 mA 60 VGS = −4.5 V 40 −10 V 20 0 –0.1 –1 –10 –100 – 1000 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - ˚C 4 Data Sheet G14047EJ1V0DS00 µ PA1717 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed VGS = −4.5 V 10 0V 60 VGS = −4.5 V ISD - Diode Forward Current - A 40 −10 V 1 0.1 20 I D = −3 A 150 0 −50 0 50 100 0.01 0.00 0.50 1.00 1.50 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz tr tf 100 td(off) 1000 Ciss Coss td(on) 10 VGS(on) = −10 V VDD = −15 V RG = 6 Ω 100 Crss 10 −0.01 −0.1 −1 −10 −100 1 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE CURRENT 1000 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns −30 100 −20 VDS = −24 V −15 V −6 V −12 VGS −10 −8 −6 10 −10 VDS 0 5 10 15 20 −4 −2 0 1 −0.1 −1 −10 −100 IF - Diode Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V di/dt = 100 A/ µs VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS −40 ID = −6 A Data Sheet G14047EJ1V0DS00 5 µ PA1717 [MEMO] 6 Data Sheet G14047EJ1V0DS00 µ PA1717 [MEMO] Data Sheet G14047EJ1V0DS00 7 µ PA1717 • The information in this document is current as of June, 2000. 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