UPC358G2

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC358 LOW POWER DUAL OPERATIONAL AMPLIFIERS DESCRIPTION The µPC358 is a dual operational amplifier which is designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the power supply current drain is very low. Further advantage, the input commonmode voltage range includes ground in the linear mode. FEATURES • Internally frequency compensation • Wide output voltage swing V– to V+ –1.5 V • Common mode input voltage range includes V– • Wide supply voltage range 3 V to 30 V (Single) ± 1.5 V to ± 15 V (Split) • Output short circuit protection EQUIVALENT CIRCUIT (1/2 Circuit) 100 µ A Q5 Q2 II Q1 Q3 Q4 Q6 CC Q7 RSC OUT IN Q10 Q8 Q9 Q11 Q12 50 µ A V– Q13 V+ PIN CONFIGURATION (Marking Side) µ PC358C, 358G2 OUT1 II1 IN1 V– 1 –+ 2 +– 3 6 2 7 1 8 6 µA 6 µA V+ OUT2 II2 IN2 4 5 µ PC358HA 1 –+ 1 + 2 +– 5 6 7 8 9 2 3 4 OUT1 OUT2 II1 IN1 V– IN2 II2 V ORDERING INFORMATION Part Number Package 8-pin plastic DIP (300 mil) 8-pin plastic SOP (225 mil) 9-pin slim SIP µPC358C µPC358G2 µPC358HA The information in this document is subject to change without notice. Document No. G11765EJ4V0DS00 (4th edition) (Previous No. IC-1284) Date Published May 1997 N Printed in Japan The mark shows major revised points. V + © 1997 µPC358 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Voltage between V+ and V– Note 1 Symbol V+ – V– Ratings –0.3 to +32 ± 32 V––0.3 to V–+32 V––0.3 to V++0.3 Unit V V V V mW mW mW s °C °C Differential Input Voltage Input Voltage Output Voltage Power Dissipation C Package G2 Package HA Package Output Short Circuit Duration Operating Ambient Temperature Storage Temperature Note 2 Note 3 Note 4 Note 5 Note 4 Note 6 VID VI VO PT 350 440 350 Indefinite TA Tstg –20 to +80 –55 to +125 Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) Supply Voltage (V– = GND) Symbol V± V+ MIN. ± 1.5 +3 TYP. MAX. ± 15 +30 Unit V V ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = +5 V, V– = GND) Parameter Input Offset Voltage Input Offset Current Input Bias Current Large Signal Voltage Gain Supply Current Common Mode Rejection Ratio Supply Voltage Rejection Ratio Output Voltage Swing Common Mode Input Voltage Range Output Current (SOURCE) Output Current (SINK) Note 7 Symbol VIO IIO IB AV ICC CMR SVR VO VICM IO SOURCE IO SINK VIN+ = +1 V, VIN– =0V RL = 2 kΩ (Connect to GND) RL ≥ 2 kΩ RL = ∞, IO = 0 A, Both Amplifiers 65 65 0 0 20 10 12 40 20 50 120 25 RS = 0 Ω Conditions MIN. TYP. ±2 ±5 45 100 0.7 70 100 V+ V+ –1.5 –1.5 1.2 MAX. ±7 ± 50 250 Unit mV nA nA V/mA mA dB dB V V mA mA VIN– = +1 V, VIN+ = 0 V VIN– = +1 V, VIN+ = 0 V, VO = 200 mV µA dB Channel Separation f = 1 kHz to 20 kHz Note 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 2 µPC358 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.) POWER DISSIPATION 600 PT - Total Power Dissipation - mW SUPPLY CURRENT 4 V+ A ICC – + 2 500 400 300 200 100 ICC - Supply Current - mA µ PC358G2 3 µPC358C, 358HA 1 TA = 0 to 70 °C TA = –20 °C 0 10 20 30 40 V+ - Supply Voltage - V (V– = GND) 0 20 40 60 80 100 TA - Operating Ambient Temperature - °C INPUT OFFSET VOLTAGE 3 VIO - Input Offset Voltage - mV VIO - Input Offset Voltage - mV INPUT OFFSET VOLTAGE 5 4 3 2 1 0 –1 –2 –3 –4 –50 0 50 100 TA - Operating Ambient Temperature - ˚C + V =5V 2 TA = 25 ˚C 1 0 0 10 20 30 40 – V - Supply Voltage - V (V = GND) + INPUT BIAS CURRENT 100 100 80 INPUT BIAS CURRENT V+ = +15 V V– = GND IB - Input Bias Current - nA 75 IB - Input Bias Current - nA 60 50 T A = 25 °C 40 20 0 –50 0 50 100 TA - Operating Ambient Temperature - ˚C 25 0 10 20 30 40 V+ - Supply Voltage - V (V– = GND) 3 µPC358 OUTPUT SHORT CIRCUIT CURRENT IO SHORT - Output Short Circuit Current - mA OPEN LOOP FREQUENCY RESPONSE 140 Aυ - Open Loop Voltage Gain - dB 70 10 MΩ 0.1 µF VIN V+/2 – + V+ VO 120 100 80 60 60 – + IO SHORT 50 V+ = 30 V 40 20 0 1 10 100 1 k 10 k 100 k 1 M 10 M f - Frequency - Hz V+ = 10 to 15 V 40 30 –20 0 20 60 40 TA - Ambient Temperature - ˚C 80 OPEN LOOP VOLTAGE GAIN 160 AV - Open Loop Voltage Gain - dB LARGE SIGNAL FREQUENCY RESPONSE 20 100 kΩ 1 kΩ 15 VIN +7 V +15 V – + 2 kΩ VO RL = 20 kΩ 120 RL = 2 kΩ 80 VO - Output Voltage Swing -Vp-p 10 40 5 0 10 20 30 40 V - Supply Voltage - V (V– = GND) + 0 1k 3 5 10 k 30 50 100 k 300 500 1 M f - Frequency - Hz COMMON MODE REJECTION RATIO CMR - Common Mode Rejection Ratio - dB VOLTAGE FOLLOWER PULSE RESPONSE 4 VIN VO Input Voltage - V Output Voltage - V 120 100 80 60 40 20 0 100 3 2 1 0 3 2 1 0 20 40 t - Time - µs RL ≥ 2 kΩ + V = 15 V 1k 10 k 100 k f - Frequency - Hz 1M 60 80 4 µPC358 SLEW RATE SR– SR+ 0.2 0.3 SR - Slew Rate - V/µ s 0.1 V± = ±15 V VO = ±10 V 0 0 50 100 –50 TA - Operating Ambient Temperature - ˚C OUTPUT SINK CURRENT LIMIT 100 50 30 20 VO - Output Voltage - V 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.01 V+/2 – + V+ V+ = +15 V IO SINK VO 0.03 0.05 0.1 0.3 0.5 1 2 3 5 10 20 30 50 100 IO SINK - Output Sink Current - mA OUTPUT SOURCE CURRENT LIMIT 5 V+ = +15 V V+ ∆VO - Output Voltage to V+ - V 4 V+/2 3 + – ∆VO IO SOURCE 2 1 0 0.01 0.03 0.05 0.1 0.3 0.5 1 2 3 5 10 20 30 50 100 IO SOURSE - Output Source Current - mA 5 µPC358 PACKAGE DRAWINGS 8 PIN PLASTIC DIP (300 mil) 8 5 1 A I 4 K P L J H G F D N M C B M R NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel. ITEM A B C D F G H I J K L M N P R MILLIMETERS 10.16 MAX. 1.27 MAX. 2.54 (T.P.) 0.50±0.10 1.4 MIN. 3.2±0.3 0.51 MIN. 4.31 MAX. 5.08 MAX. 7.62 (T.P.) 6.4 0.25 +0.10 –0.05 0.25 0.9 MIN. 0~15 ° INCHES 0.400 MAX. 0.050 MAX. 0.100 (T.P.) 0.020 +0.004 –0.005 0.055 MIN. 0.126±0.012 0.020 MIN. 0.170 MAX. 0.200 MAX. 0.300 (T.P.) 0.252 0.010 +0.004 –0.003 0.01 0.035 MIN. 0~15 ° P8C-100-300B,C-1 6 µPC358 8 PIN PLASTIC SOP (225 mil) 8 5 detail of lead end 1 A 4 G P H I J F K E B C D M M L N NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM A B C D E F G H I J K L M N P MILLIMETERS 5.37 MAX. 0.78 MAX. 1.27 (T.P.) 0.40 +0.10 –0.05 0.1±0.1 1.8 MAX. 1.49 6.5±0.3 4.4 1.1 0.15 +0.10 –0.05 0.6±0.2 0.12 0.10 ° 3 ° +7° –3 INCHES 0.212 MAX. 0.031 MAX. 0.050 (T.P.) 0.016 +0.004 –0.003 0.004±0.004 0.071 MAX. 0.059 0.256±0.012 0.173 0.043 0.006 +0.004 –0.002 0.024 +0.008 –0.009 0.005 0.004 ° 3 ° +7° –3 S8GM-50-225B-4 7 µPC358 9 PIN PLASTIC SLIM SIP A N M 1 9 Q Y C K H G M V U F Z J NOTE Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. ITEM A C F G H J K M N Q U V Y Z MILLIMETERS 22.86 MAX. 1.1 MIN. 0.5±0.1 0.25 2.54 1.27 MAX. 0.51 MIN. 5.08 MAX. 2.8±0.2 5.75 MAX. 1.5 MAX. 0.25 +0.10 –0.05 3.2±0.5 1.1 MIN. INCHES 0.900 MAX. 0.043 MIN. 0.02 +0.004 –0.005 0.010 0.100 0.050 MAX. 0.020 MIN. 0.200 MAX. 0.11+0.009 –0.008 0.227 MAX. 0.059 MAX. 0.01+0.004 –0.003 0.126±0.02 0.043 MIN. P9HA-254B-1 8 µPC358 RECOMMENDED SOLDERING CONDITIONS When soldering these products, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Type of Surface Mount Device µPC358G2: 8-pin plastic SOP (225 mil) Process Infrared ray reflow Conditions Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device). Symbol IR30-00-1 Vapor phase soldering VP15-00-1 Wave soldering WS60-00-1 Partial heating method – Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Types of Through-hole Device µPC358C: 8-pin plastic DIP (300 mil) µPC358HA: 9-pin slim SIP Process Wave soldering (only to leads) Partial heating method Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Conditions Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 9 µPC358 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL IC PACKAGE MANUAL GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES SEMICONDUCTORS SELECTION GUIDE NEC SEMICONDUCTOR DEVICE RELIABILITY/ QUALITY CONTROL SYSTEM - STANDARD LINEAR IC C11531E C10535E C10943X MEI-1202 X10679E IEI-1212 10 µPC358 [MEMO] 11 µPC358 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2