DATA SHEET
MOS INTEGRATED CIRCUIT
µPD43256B
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
Description
The µPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations. The µPD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I) (8 x 13.4 mm).
Features
• 32,768 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Low VCC data retention: 2.0 V (MIN.) • /OE input for easy application
Part number Access time ns (MAX.) Operating supply Operating ambient voltage V temperature °C 0 to 70 At operating mA (MAX.) 45 Supply current At standby At data retention
µA (MAX.)
50 15
µA (MAX.) Note1
3 2
µPD43256B-xxL µPD43256B-xxLL µPD43256B-Axx µPD43256B-Bxx Note2
70, 85
4.5 to 5.5
85, 100
Note2
, 120
Note2
3.0 to 5.5 2.7 to 5.5
100, 120, 150
Notes 1. TA ≤ 40 °C, VCC = 3.0 V 2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V) Version X and P This Data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in the fifth character position in a lot number signifies version X, letter P, version P.
JAPAN D43256B
Lot number
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. M10770EJCV0DS00 (12th edition) Date Published June 2000 NS CP (K) Printed in Japan
The mark 5 shows major revised points.
©
1990, 1993, 1994
µPD43256B
Ordering Information
Part number Package Access time ns (MAX.) Operating supply Operating ambient voltage V temperature °C 0 to 70 L version Remark
µPD43256BCZ-70L µPD43256BCZ-85L µPD43256BCZ-70LL µPD43256BCZ-85LL µPD43256BGU-70L µPD43256BGU-85L µPD43256BGU-70LL µPD43256BGU-85LL µPD43256BGU-A85 µPD43256BGU-A10 µPD43256BGU-A12 µPD43256BGU-B10 µPD43256BGU-B12 µPD43256BGW-70LL-9JL µPD43256BGW-85LL-9JL µPD43256BGW-A85-9JL µPD43256BGW-A10-9JL µPD43256BGW-A12-9JL µPD43256BGW-B10-9JL µPD43256BGW-B12-9JL µPD43256BGW-B15-9JL µPD43256BGW-70LL-9KL µPD43256BGW-85LL-9KL µPD43256BGW-A85-9KL µPD43256BGW-A10-9KL µPD43256BGW-A12-9KL µPD43256BGW-B10-9KL µPD43256BGW-B12-9KL µPD43256BGW-B15-9KL
28-PIN PLASTIC DIP (15.24 mm (600))
70 85 70 85
4.5 to 5.5
LL version
28-PIN PLASTIC SOP (11.43 mm (450))
70 85 70 85 85 100 120 100 120 2.7 to 5.5 3.0 to 5.5
L version
LL version
A version
B version
28-PIN PLASTIC TSOP (I) (8x13.4) (Normal bent)
70 85 85 100 120 100 120 150
4.5 to 5.5
LL version
3.0 to 5.5
A version
2.7 to 5.5
B version
28-PIN PLASTIC TSOP (I) (8x13.4) (Reverse bent)
70 85 85 100 120 100 120 150
4.5 to 5.5
LL version
3.0 to 5.5
A version
2.7 to 5.5
B version
2
Data Sheet M10770EJCV0DS00
µPD43256B
Pin Configurations (Marking Side)
/xxx indicates active low signal.
28-PIN PLASTIC DIP (15.24 mm (600)) [ µPD43256BCZ-xxL ] [ µPD43256BCZ-xxLL ]
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
A0 - A14 I/O1 - I/O8 /CS /WE /OE VCC GND
: Address inputs : Data inputs / outputs : Chip Select : Write Enable : Output Enable : Power supply : Ground
Remark Refer to Package Drawings for the 1-pin index mark.
Data Sheet M10770EJCV0DS00
3
µPD43256B
28-PIN PLASTIC SOP (11.43 mm (450)) [ µPD43256BGU-xxL ] [ µPD43256BGU-xxLL ] [ µPD43256BGU-Axx ] [ µPD43256BGU-Bxx ]
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
A0 - A14 I/O1 - I/O8 /CS /WE /OE VCC GND
: Address inputs : Data inputs / outputs : Chip Select : Write Enable : Output Enable : Power supply : Ground
Remark Refer to Package Drawings for the 1-pin index mark.
4
Data Sheet M10770EJCV0DS00
µPD43256B
28-PIN PLASTIC TSOP (I) (8x13.4) (Normal bent) [ µPD43256BGW-xxLL-9JL ] [ µPD43256BGW-Axx-9JL ] [ µPD43256BGW-Bxx-9JL ]
/OE A11 A9 A8 A13 /WE VCC A14 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2
28-PIN PLASTIC TSOP (I) (8x13.4) (Reverse bent) [ µPD43256BGW-xxLL-9KL ] [ µPD43256BGW-Axx-9KL ] [ µPD43256BGW-Bxx-9KL ]
A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2
28 27 26 25 24 23 22 21 20 19 18 17 16 15
1 2 3 4 5 6 7 8 9 10 11 12 13 14
/OE A11 A9 A8 A13 /WE VCC A14 A12 A7 A6 A5 A4 A3
A0 - A14 I/O1 - I/O8 /CS /WE /OE VCC GND
: Address inputs : Data inputs / outputs : Chip Select : Write Enable : Output Enable : Power supply : Ground
Remark Refer to Package Drawings for the 1-pin index mark.
Data Sheet M10770EJCV0DS00
5
µPD43256B
Block Diagram
A0 A14
Address buffer
Row decoder
Memory cell array 262,144 bits
I/O1 I/O8 Input data controller
Sense amplifier / Switching circuit Column decoder
Output data controller
Address buffer
/CS
/OE /WE VCC GND
Truth Table
/CS H L L L /OE × H × L /WE × H L H Mode Not selected Output disable Write Read DIN DOUT I/O High impedance Supply current ISB ICCA
Remark × : VIH or VIL
6
Data Sheet M10770EJCV0DS00
µPD43256B
Electrical Specifications
Absolute Maximum Ratings
Parameter Supply voltage Input / Output voltage Operating ambient temperature Storage temperature Symbol VCC VT TA Tstg Condition Rating –0.5 –0.5
Note
Unit V V °C °C
to +7.0
Note
to VCC + 0.5
0 to 70 –55 to +125
Note –3.0 V (MIN.) (Pulse width : 50 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions
Parameter Symbol Condition
µPD43256B-xxL µPD43256B-xxLL
MIN. MAX. 5.5 VCC+0.5 +0.8 70
µPD43256B-Axx
µPD43256B-Bxx
Unit
MIN. 3.0 2.2 –0.3 0
Note
MAX. 5.5 VCC+0.5 +0.5 70
MIN. 2.7 2.2 –0.3 0
Note
MAX. 5.5 VCC+0.5 +0.5 70 V V V °C
Supply voltage High level input voltage Low level input voltage Operating ambient temperature
VCC VIH VIL TA
4.5 2.2 –0.3 0
Note
Note –3.0 V (MIN.) (Pulse width: 50 ns) Capacitance (TA = 25 °C, f = 1 MHz)
Parameter Input capacitance Input / Output capacitance Symbol CIN CI/O Test conditions VIN = 0 V VI/O = 0 V MIN. TYP. MAX. 5 8 Unit pF pF
Remarks 1. VIN : Input voltage VI/O : Input / Output voltage 2. These parameters are periodically sampled and not 100% tested.
Data Sheet M10770EJCV0DS00
7
µPD43256B
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (1/2)
Parameter Symbol Test condition
µPD43256B-xxL
MIN. TYP. MAX. +1.0 +1.0
µPD43256B-xxLL
MIN. –1.0 –1.0 TYP. MAX. +1.0 +1.0
Unit
Input leakage current I/O leakage current
ILI ILO
VIN = 0 V to VCC VI/O = 0 V to VCC, /OE = VIH or /CS = VIH or /WE = VIL
–1.0 –1.0
µA µA
Operating supply current
ICCA1 ICCA2 ICCA3
/CS = VIL, Minimum cycle time, II/O = 0 mA /CS = VIL, II/O = 0 mA /CS ≤ 0.2 V, Cycle = 1 MHz, II/O = 0 mA, VIL ≤ 0.2 V, VIH ≥ VCC – 0.2 V
45 10 10
45 10 10
mA
Standby supply current
ISB ISB1
/CS = VIH /CS ≥ VCC − 0.2 V IOH = –1.0 mA IOH = –0.1 mA IOL = 2.1 mA 2.4
VCC–0.5
3 1.0 50 2.4
VCC–0.5
3 0.5 15
mA
µA
V
High level output voltage
VOH1 VOH2
Low level output voltage
VOL
0.4
0.4
V
Remarks 1. VIN : Input voltage VI/O : Input / Output voltage 2. These DC characteristics are in common regardless of package types.
8
Data Sheet M10770EJCV0DS00
µPD43256B
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (2/2)
Parameter Symbol Test condition
µPD43256B-Axx
MIN. TYP. MAX. +1.0 +1.0
µPD43256B-Bxx
MIN. –1.0 –1.0 TYP. MAX. +1.0 +1.0
Unit
Input leakage current I/O leakage current
ILI ILO
VIN = 0 V to VCC VI/O = 0 V to VCC, /OE = VIH or /CS = VIH or /WE = VIL
–1.0 –1.0
µA µA
Operating supply current
ICCA1
/CS = VIL, Minimum cycle time, II/O = 0 mA
µPD43256B-Axx µPD43256B-Bxx
VCC ≤ 3.3 V
45 – – 10
– 45 20 10 5 10 5 3 2 0.5 0.5 2.4 2.4
VCC–0.1
mA
ICCA2
/CS = VIL, II/O = 0 mA VCC ≤ 3.3 V
– 10 – 3
ICCA3
/CS ≤ 0.2 V, Cycle = 1 MHz, II/O = 0 mA, VIL ≤ 0.2 V, VIH ≥ VCC – 0.2 V VCC ≤ 3.3 V
Standby supply current
ISB
/CS = VIH VCC ≤ 3.3 V
mA
– 0.5 15 – 2.4 2.4
VCC–0.1
ISB1
/CS ≥ VCC − 0.2 V VCC ≤ 3.3 V
15 10
µA
High level output voltage
VOH1
IOH = –1.0 mA, VCC ≥ 4.5 V IOH = –0.5 mA, VCC < 4.5 V
V
VOH2 Low level output voltage VOL
IOH = –0.02 mA IOL = 2.1 mA, VCC ≥ 4.5 V IOL = 1.0 mA, VCC < 4.5 V
0.4 0.4 0.1
0.4 0.4 0.1
V
VOL1
IOL = 0.02 mA
Remarks 1. VIN : Input voltage VI/O : Input / Output voltage 2. These DC characteristics are in common regardless of package types.
Data Sheet M10770EJCV0DS00
9
µPD43256B
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions [ µPD43256B-70L, µPD43256B-85L, µPD43256B-70LL, µPD43256B-85LL ] Input Waveform (Rise and Fall Time ≤ 5 ns)
2.2 V 1.5 V 0.8 V Test points 1.5 V
Output Waveform
1.5 V
Test points
1.5 V
Output Load AC characteristics should be measured with the following output load conditions. Figure 1 (tAA, tACS, tOE, tOH)
+5 V
Figure 2 (tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW)
+5 V
1.8 kΩ I/O (Output) 990 Ω 100 pF CL I/O (Output) 990 Ω
1.8 kΩ
5 pF CL
Remark CL includes capacitance of the probe and jig, and stray capacitance. [ µPD43256B-A85, µPD43256B-A10, µPD43256B-A12, µPD43256B-B10, µPD43256B-B12, µPD43256B-B15 ] Input Waveform (Rise and Fall Time ≤ 5 ns)
2.2 V 1.5 V 0.5 V Test points 1.5 V
Output Waveform
1.5 V
Test points
1.5 V
Output Load AC characteristics should be measured with the following output load conditions.
tAA, tACS, tOE, tOH 1TTL + 100 pF tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW 1TTL + 5 pF
10
Data Sheet M10770EJCV0DS00
µPD43256B
Read Cycle (1/2)
Parameter Symbol VCC ≥ 4.5 V Unit Condition
µPD43256B-70
µPD43256B-85 µPD43256B-A85/A10/A12 µPD43256B-B10/B12/B15
MIN. Read cycle time Address access time /CS access time /OE access time Output hold from address change /CS to output in low impedance /OE to output in low impedance /CS to output in high impedance /OE to output in high impedance tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ 10 10 5 70
MAX.
MIN. 85
MAX. ns 85 85 40 ns ns ns ns ns ns 30 30 ns ns Note
70 70 35 10 10 5 30 30
Note
See the output load.
Remark These AC characteristics are in common regardless of package types and L, LL versions.
Read Cycle (2/2)
Parameter Symbol VCC ≥ 3.0 V VCC ≥ 2.7 V Unit Condition
µPD43256B -A85
µPD43256B -A10
µPD43256B -A12
µPD43256B -B10
µPD43256B -B12
µPD43256B -B15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Read cycle time Address access time /CS access time /OE access time Output hold from address change /CS to output in low impedance /OE to output in low impedance /CS to output in high impedance /OE to output in high impedance tRC tAA 85 85 100 100 120 120 100 100 120 120 150 150 ns ns Note
tACS tOE tOH tCLZ tOLZ tCHZ tOHZ 10 10 5
85 50 10 10 5 35 35
100 60 10 10 5 35 35
120 60 10 10 5 40 40
100 60 10 10 5 35 35
120 60 10 10 5 40 40
150 70
ns ns ns ns ns
50 50
ns ns
Note
See the output load.
Remark These AC characteristics are in common regardless of package types.
Data Sheet M10770EJCV0DS00
11
µPD43256B
Read Cycle Timing Chart
tRC
Address (Input) tAA /CS (Input) tACS tCLZ tCHZ tOH
/OE (Input) tOE tOLZ I/O (Output) High impedance Data out tOHZ
Remark
In read cycle, /WE should be fixed to high level.
12
Data Sheet M10770EJCV0DS00
µPD43256B
Write Cycle (1/2)
Parameter Symbol VCC ≥ 4.5 V Unit Condition
µPD43256B-70
µPD43256B-85 µPD43256B-A85/A10/A12 µPD43256B-B10/B12/B15
MIN. Write cycle time /CS to end of write Address valid to end of write Write pulse width Data valid to end of write Data hold time Address setup time Write recovery time /WE to output in high impedance Output active from end of write tWC tCW tAW tWP tDW tDH tAS tWR tWHZ tOW 10 70 50 50 55 30 0 0 0
MAX.
MIN. 85 70 70 60 35 0 0 0
MAX. ns ns ns ns ns ns ns ns 30 ns ns Note
30 10
Note
See the output load.
Remark These AC characteristics are in common regardless of package types and L, LL versions.
Write Cycle (2/2)
Parameter Symbol VCC ≥ 3.0 V VCC ≥ 2.7 V Unit Con-
µPD43256B -A85
µPD43256B -A10
µPD43256B -A12
µPD43256B -B10
µPD43256B -B12
µPD43256B -B15
dition
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Write cycle time /CS to end of write Address valid to end of write Write pulse width Data valid to end of write Data hold time Address setup Write recovery /WE to output in high impedance Output active from end of write tWC tCW tAW 85 70 70 100 70 70 120 90 90 100 70 70 120 90 90 150 100 100 ns ns ns
tWP tDW
60 60
60 60
80 70
60 60
80 70
90 80
ns ns ns ns ns 50 ns ns Note
tDH tAS tWR tWHZ tOW
0 0 0 30 10
0 0 0 35 10
0 0 0 40 10
0 0 0 35 10
0 0 0 40 10
0 0 0
10
Note
See the output load.
Remark These AC characteristics are in common regardless of package types.
Data Sheet M10770EJCV0DS00
13
µPD43256B
Write Cycle Timing Chart 1 (/WE Controlled)
tWC Address (Input) tCW /CS (Input) tAW tAS /WE (Input) tOW tWHZ I/O (Input / Output) Indefinite data out High impedance tDW Data in tDH High impedance Indefinite data out tWP tWR
Cautions 1. /CS or /WE should be fixed to high level during address transition.
•
2. When I/O pins are in the output state, therefore the input signals must not be applied to the output.
Remarks 1. Write operation is done during the overlap time of a low level /CS and a low level /WE. 2. When /WE is at low level, the I/O pins are always high impedance. When /WE is at high level, read operation is executed. Therefore /OE should be at high level to make the I/O pins high impedance. 3. If /CS changes to low level at the same time or after the change of /WE to low level, the I/O pins will remain high impedance state.
14
Data Sheet M10770EJCV0DS00
µPD43256B
Write Cycle Timing Chart 2 (/CS Controlled)
tWC Address (Input)
tAS /CS (Input) tAW tWP /WE (Input)
tCW
tWR
tDW High impedance I/O (Input) Data in
tDH High impedance
Cautions 1. /CS or /WE should be fixed to high level during address transition.
•
2. When I/O pins are in the output state, therefore the input signals must not be applied to the output.
Remark
Write operation is done during the overlap time of a low level /CS and a low level /WE.
Data Sheet M10770EJCV0DS00
15
µPD43256B
Low VCC Data Retention Characteristics (TA = 0 to 70 °C)
Parameter Symbol Test Condition
µPD43256B-xxL
µPD43256B-xxLL µPD43256B-Axx µPD43256B-Bxx
Unit
MIN. Data retention supply voltage Data retention supply current Chip deselection to data retention mode Operation recovery time VCCDR ICCDR tCDR /CS ≥ VCC − 0.2 V VCC = 3.0 V, /CS ≥ VCC − 0.2 V 0 2.0
TYP.
MAX. 5.5
MIN. 2.0
TYP.
MAX. 5.5 V
0.5
20
Note1
0.5 0
7
Note2
µA
ns
tR
5
5
ms
Notes 1. 3 µA (TA ≤ 40 °C) 2. 2 µA (TA ≤ 40 °C), 1 µA (TA ≤ 25 °C)
Data Retention Timing Chart
tCDR VCC 4.5 V
Note
Data retention mode
tR
/CS VIH (MIN.) VCCDR (MIN.) /CS ≥ VCC – 0.2 V
VIL (MAX.)
GND
Note A version : 3.0 V, B version : 2.7 V
Remark The other pins (Address, /OE, /WE, I/O) can be in high impedance state.
16
Data Sheet M10770EJCV0DS00
µPD43256B
Package Drawings
28-PIN PLASTIC DIP (15.24 mm (600))
28 15
1 A
14
J I
K L
F D H G
NOTES
C N
M
B M R
1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. Item "K" to center of leads when formed parallel.
ITEM A B C D F G H I J K L M N R
MILLIMETERS 38.10 MAX. 2.54 MAX. 2.54 (T.P.) 0.50 ± 0.10 1.2 MIN. 3.6 ± 0.3 0.51 MIN. 4.31 MAX. 5.72 MAX. 15.24 (T.P.) 13.2 0.25 + 0.10 − 0.05 0.25 0 - 15 ° P28C-100-600A1-2
Data Sheet M10770EJCV0DS00
17
µPD43256B
•
28-PIN PLASTIC SOP (11.43 mm (450))
28 15
detail of lead end
P
1 A F G
14
H I S J
C D E
NOTE
N
M
S B K
L
M
ITEM A B C D E F G H I J K L M N P
MILLIMETERS 18.0 + 0.6 − 0.05 1.27 MAX. 1.27 (T.P.) 0.42 + 0.08 − 0.07 0.2 ± 0.1 2.95 MAX. 2.55 ± 0.1 11.8 ± 0.3 8.4 ± 0.1 1.7 ± 0.2 0.22 ± 0.05 0.7 ± 0.2 0.12 0.10 3° +7° −3° P28GU-50-450A-4
Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition.
18
Data Sheet M10770EJCV0DS00
µPD43256B
28-PIN PLASTIC TSOP(I) (8x13.4)
1
28 detail of lead end S
R 14 15 Q
P I J S A G
H L K N S D
C M
M
B
NOTES 1. Each lead centerline is located within 0.08 mm of its true position (T.P.) at maximum material condition. 2. "A" excludes mold flash. (Includes mold flash : 8.4mm MAX.)
ITEM A B C D G H I J K L M N P Q R S
MILLIMETERS 8.0 ± 0.1 0.6 MAX. 0.55 (T.P.) 0.22 + 0.08 − 0.07 1.0 12.4 ± 0.2 11.8 ± 0.1 0.8 ± 0.2 0.145 + 0.025 − 0.015 0.5 ± 0.1 0.08 0.10 13.4 ± 0.2 0.1 ± 0.05 3° +7° −3° 1.2 MAX. P28GW-55-9JL-2
Data Sheet M10770EJCV0DS00
19
µPD43256B
28-PIN PLASTIC TSOP(I) (8x13.4)
1
28
detail of lead end Q R
14
15 S
K H
N
S L
D
M C
M
B
S G I P J A
NOTE 1. Each lead centerline is located within 0.08 mm of its true position (T.P.) at maximum material condition. 2. "A" excludes mold flash. (Includes mold flash : 8.4mm MAX.)
ITEM A B C D G H I J K L M N P Q R S
MILLIMETERS 8.0 ± 0.1 0.6 MAX. 0.55 (T.P.) 0.22 + 0.08 − 0.07 1.0 12.4 ± 0.2 11.8 ± 0.1 0.8 ± 0.2 0.145 + 0.025 − 0.015 0.5 ± 0.1 0.08 0.10 13.4 ± 0.2 0.1 ± 0.05 3° +7° −3° 1.2 MAX. P28GW-55-9KL-2
20
Data Sheet M10770EJCV0DS00
µPD43256B
Recommended Soldering Conditions The following conditions (See table below) must be met when soldering µPD43256B. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. Types of Surface Mount Device
µPD43256BGU-xxL µPD43256BGU-xxLL µPD43256BGU-Axx µPD43256BGU-Bxx µPD43256BGW-xxLL-9JL µPD43256BGW-xxLL-9KL µPD43256BGW-Axx-9JL µPD43256BGW-Axx-9KL µPD43256BGW-Bxx-9JL µPD43256BGW-Bxx-9KL
: 28-PIN PLASTIC SOP (11.43 mm (450)) : 28-PIN PLASTIC SOP (11.43 mm (450)) : 28-PIN PLASTIC SOP (11.43 mm (450)) : 28-PIN PLASTIC SOP (11.43 mm (450)) : 28-PIN PLASTIC TSOP (I) (8x13.4) (Normal bent) : 28-PIN PLASTIC TSOP (I) (8x13.4) (Reverse bent) : 28-PIN PLASTIC TSOP (I) (8x13.4) (Normal bent) : 28-PIN PLASTIC TSOP (I) (8x13.4) (Reverse bent) : 28-PIN PLASTIC TSOP (I) (8x13.4) (Normal bent) : 28-PIN PLASTIC TSOP (I) (8x13.4) (Reverse bent)
Please consult with our sales offices. Types of Through Hole Mount Device
µPD43256BCZ-xxL µPD43256BCZ-xxLL
: 28-PIN PLASTIC DIP (15.24 mm (600)) : 28-PIN PLASTIC DIP (15.24 mm (600))
Soldering process Soldering conditions Solder temperature : 260 °C or below, Flow time : 10 seconds or below
Wave soldering (only to leads)
Partial heating method
Terminal temperature : 300 °C or below, Time : 3 seconds or below (Per one lead)
Caution Do not jet molten solder on the surface of package.
Data Sheet M10770EJCV0DS00
21
µPD43256B
[ MEMO ]
22
Data Sheet M10770EJCV0DS00
µPD43256B
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD o r GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
Data Sheet M10770EJCV0DS00
23
µPD43256B
• The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
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