UPG2031TQ

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2031TQ L-BAND SP3T SWITCH DESCRIPTION The µPG2031TQ is an L-band SP3T GaAs FET switch which was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss and high linality. FEATURES • Low insertion loss • High isolation • High power : LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz : LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz : ISL = 21 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz : Pin (0.1 dB) = 33.0 dBm TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz • High-density surface mounting : 10-pin plastic TSON package (2.30 × 2.55 × 0.60 mm) APPLICATION • CDMA/PCS/GPS triple mode digital cellular telephone etc. ORDERING INFORMATION Part Number Package 10-pin plastic TSON Marking 2031 Supplying Form • Embossed tape 8 mm wide • Pin 5, 6 face the perforation side of the tape • Qty 3 kpcs/reel µPG2031TQ-E1 Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2031TQ Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10436EJ01V0DS (1st edition) Date Published September 2003 CP(K) Printed in Japan  NEC Compound Semiconductor Devices 2003 µPG2031TQ PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name RF1 GND RF2 Vcont2 RF3 Vcont3 GND ANT GND Vcont1 (Top View) 10 9 8 7 6 (Bottom View) 6 7 8 9 10 1 2 3 4 2031 1 2 3 4 5 5 GND 4 3 2 1 5 6 7 8 9 10 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Switch Control Voltage Input Power Operating Ambient Temperature Storage Temperature Symbol Vcont Pin TA Tstg Ratings −6.0 to +6.0 +36 −45 to +85 −55 to +150 Unit V dBm °C °C RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Switch Control Voltage (High) Switch Control Voltage (Low) Symbol Vcont (H) Vcont (L) MIN. 2.7 −0.2 TYP. 2.8 0 MAX. 3.0 0.2 Unit V V 2 Data Sheet PG10436EJ01V0DS µPG2031TQ ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont = 2.8 V/0 V, ZO = 50 Ω, off chip DC blocking capacitors value: 56 pF, unless otherwise specified) Parameter Insertion Loss Symbol LINS ON-Pass ANT-RF1/2/3 Test Conditions f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz Isolation ISL ANT-RF1/2/3 (OFF) Input Return Loss Output Return Loss 0.1 dB Gain Compression Input Power 2nd Harmonics 2f0 ANT-RF1/2/3 f = 1.0 GHz, Pin = 27 dBm 3rd Harmonics 3f0 ANT-RF1/2/3 f = 1.0 GHz, Pin = 27 dBm Switch Control Speed Switch Control Current tsw Icont RF Non − − 150 1 − 50 ns 65 75 − dBc 65 75 − dBc RLin RLout Pin (0.1 dB) ANT-RF1/2/3 ANT-RF1/2/3 ANT-RF1/2/3 f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 0.5 to 2.0 GHz f = 0.5 to 2.0 GHz f = 1.0 GHz MIN. − − 22 17 15 15 31.0 TYP. 0.45 0.55 26 21 20 20 33.0 MAX. 0.65 0.80 − − − − − Unit dB dB dB dB dB dB dBm µA Data Sheet PG10436EJ01V0DS 3 µPG2031TQ EVALUATION CIRCUIT C1 RF1 C2 ANT C1 LESD Note Vcont1 2031 C1 RF2 Vcont2 C2 RF3 C1 Vcont3 C2 Note Recommend attached LESD to antenna port for ESD protection. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. USING THE NEC EVALUATION BOARD Symbol C1 C2 Values 56 pF 1 000 pF TRUTH TABLE RF1 GND RF2 Vcont2 RF3 Vcont1 GND ANT GND Vcont3 Vcont1 High Low Low Vcont2 Low High Low Vcont3 Low Low High ANT-RF1 ON OFF OFF ANT-RF2 OFF ON OFF ANT-RF3 OFF OFF ON 4 Data Sheet PG10436EJ01V0DS µPG2031TQ PACKAGE DIMENSIONS 10-PIN PLASTIC TSON (UNIT: mm) (0.30) (Bottom View) 0.40±0.05 0.18±0.05 (0.15) (0.05) 2.55±0.15 2.25±0.1 (0.95) 2.20±0.1 2.30±0.15 (0.125) (0.60 MAX.) (1.70) (0.30) Remark ( ) : Reference value (1.95) Data Sheet PG10436EJ01V0DS 5 µPG2031TQ RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 VP215 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). 6 Data Sheet PG10436EJ01V0DS µPG2031TQ • The information in this document is current as of September, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PG10436EJ01V0DS 7 µPG2031TQ Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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