PAT3016

THYRISTOR MODULE 66A / 1200 to 1600V PAT3012 PAH3012 PAT3016 PAH3016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING φ TYPICAL APPLICATIONS * AC phase control * AC switch PAT PAH Maximum Ratings Parameter Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Approx Net Weight:155g Symbol VDRM VDSM Grade PAT/PAH3012 PAT/PAH3016 Unit V 1200 1300 1600 1700 Max Max Rated Value Parameter Parameter RMS On-State Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IT(RMS) IFSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions Conditions 50Hz Half Sine Wave condition Tc=96°C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs • Unit A A A2s A/µs 66 600 1800 100 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.4 to 3.5 N •m M5 Screw 2.4 to 2.8 Electrical • Thermal Characteristics Characteristics Peak Off-State Current Peak On-State Voltage Gate Current to Trigger Symbol IDM VTM IGT Test Conditions VDM= VDRM, Tj=125°C ITM= 90A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 20 1.50 200 100 50 4 2.5 2 0.25 500 100 6 2 4 100 50 0.35 0.1 Unit mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance *1 Value Per 1Arm *1: Value Per Module VGT VGD dv/dt tq V V V/µs µs µs µs µs mA ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound °C/W PAT/PAH301x OUTLINE DRAWING (Dimensions in mm) φ